VISHAY SI7450DP

Si7450DP
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
ID (A)
0.080 @ VGS = 10 V
5.3
0.090 @ VGS = 6 V
5.0
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch for High Density DC/DC
D Telecom/Server 48-V DC/DC
D Industrial and 42-V Automotive
D
PowerPAKt SO-8
S
6.15 mm
5.15 mm
1
S
2
S
3
G
G
4
D
8
N-Channel MOSFET
D
7
D
6
D
5
Bottom View
S
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
200
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 70_C
ID
3.2
4.3
2.6
IDM
40
Avalanche Current
IAS
15
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 70_C
Operating Junction and Storage Temperature Range
PD
V
5.3
Pulsed Drain Current
A
4.3
1.6
5.2
1.9
3.3
1.2
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 10 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
Steady State
Steady State
RthJA
RthJC
Typical
Maximum
19
24
52
65
1.5
1.8
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
www.vishay.com
1
Si7450DP
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
VGS(th)
VDS = VGS, ID = 250 mA
2.0
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 160 V, VGS = 0 V
1
VDS = 160 V, VGS = 0 V, TJ = 55_C
5
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
rDS(on)
Forward Transconductancea
Diode Forward
Voltagea
VDS w 5 V, VGS = 10 V
V
nA
m
mA
40
A
VGS = 10 V, ID = 4.0 A
0.065
0.080
VGS = 6.0 V, ID = 4.0 A
0.070
0.090
gfs
VDS = 15 V, ID = 5 A
19
VSD
IS = 2.8 A, VGS = 0 V
0.75
1.2
34
42
VDS = 100 V, VGS = 10 V, ID = 4.0 A
7.5
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
nC
Gate-Drain Charge
Qgd
12.0
Turn-On Delay Time
td(on)
14
20
tr
20
30
32
50
35
Rise Time
Turn-Off Delay Time
VDD = 100 V, RL = 25 W
ID ^ 4.0 A, VGEN = 10 V, RG = 6 W
td(off)
Fall Time
tf
25
Gate Resistance
Rg
0.85
Source-Drain Reverse Recovery Time
trr
W
70
IF = 2.8 A, di/dt = 100 A/ms
ns
100
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
40
40
VGS = 10 thru 6 V
35
32
I D – Drain Current (A)
I D – Drain Current (A)
30
24
16
5V
8
25
20
15
TC = 125_C
10
25_C
5
4V
0
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
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2
–55_C
0
10
0
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
Si7450DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
2500
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
0.20
0.15
VGS = 6 V
0.10
VGS = 10 V
2000
Ciss
1500
1000
0.05
500
Crss
Coss
0.00
0
0
8
16
24
32
0
40
40
ID – Drain Current (A)
Gate Charge
160
200
On-Resistance vs. Junction Temperature
2.5
VDS = 100 V
ID = 4.0 A
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
120
VDS – Drain-to-Source Voltage (V)
20
16
12
8
4
VGS = 10 V
ID = 4.0 A
2.0
1.5
1.0
0.5
0
0
15
30
45
0.0
–50
60
–25
0
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.25
r DS(on) – On-Resistance ( W )
TJ = 150_C
10
TJ = 25_C
1
0.0
25
TJ – Junction Temperature (_C)
50
I S – Source Current (A)
80
0.20
ID = 4.0 A
0.15
0.10
0.05
0.00
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
1.2
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si7450DP
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power, Juncion-To-Ambient
1.0
100
80
ID = 250 mA
Power (W)
V GS(th) Variance (V)
0.5
0.0
60
–0.5
40
–1.0
20
–1.5
–50
0
–25
0
25
50
75
100
125
150
0.001
0.1
0.01
TJ – Temperature (_C)
1
10
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 68_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Case
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71432
S-03475—Rev. B, 16-Apr-01
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