Si4427DY New Product Vishay Siliconix P-Channel 30-V (D-S) MOSFET VDS (V) –30 30 rDS(on) () ID (A) 0.0105 @ VGS = –10 V –13.3 0.0125 @ VGS = –4.5 V –12.2 0.0195 @ VGS = –2.5 V –9.8 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –30 Gate-Source Voltage VGS 12 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C V –9.4 –13.3 ID TA = 70C Pulsed Drain Current –10.7 –7.5 IDM continuous Source Current (Diode Conduction)a IS TA = 25C Maximum Power Dissipationa Unit TA = 70C Operating Junction and Storage Temperature Range PD A –50 –2.5 –1.3 3.0 1.5 1.9 0.9 W TJ, Tstg C –55 to 150 Parameter Maximum Junction-to-Ambienta Symbol t 10 sec Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 32 42 68 85 15 18 Unit C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71308 S-01828—Rev. A, 21-Aug-00 www.vishay.com 1 Si4427DY New Product Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.60 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta Voltagea "100 VDS = –24 V, VGS = 0 V –1 VDS = –24 V, VGS = 0 V, TJ = 55C –5 VDS v –5 V, VGS = –10 V nA mA –50 A VGS = –10 V, ID = –13.3 A 0.0086 0.0105 VGS = –4.5 V, ID = –12.2 A 0.0105 0.0125 VGS = –2.5 V, ID = –9.8 A 0.0165 0.0195 gfs VDS = –15 V, ID = –13.3 A 40 VSD IS = –2.5 A, VGS = 0 V –0.8 –1.2 47 70 rDS(on) Forward Transconductancea Diode Forward VDS = 0 V, VGS = "12 V ID(on) a D i S Drain-Source On-State O S Resistance R i V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 8.3 Turn-On Delay Time td(on) 16 tr 12 20 220 330 70 110 50 80 Rise Time Turn-Off Delay Time VDS = –15 15 V V, VGS = –4.5 4 5 V, V ID = –13.3 13 3 A VDD = –15 15 V V,, RL = 15 W ID ^ –1 1 A, A VGEN = –10 10 V V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr nC C 20 IF = –2.5 A, di/dt = 100 A/ms 25 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Output Characteristics Transfer Characteristics 50 50 VGS = 10 thru 3 V 40 I D – Drain Current (A) I D – Drain Current (A) 40 30 20 10 30 20 TC = 125C 10 2V 25C 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 –55C 0 5 0 0.5 1.0 1.5 2.0 2.5 3.0 VGS – Gate-to-Source Voltage (V) Document Number: 71308 S-01828—Rev. A, 21-Aug-00 Si4427DY New Product Vishay Siliconix Capacitance 9000 0.025 7500 C – Capacitance (pF) r DS(on) – On-Resistance ( ) On-Resistance vs. Drain Current 0.030 VGS = 2.5 V 0.020 0.015 VGS = 4.5 V 0.010 6000 4500 3000 Coss VGS = 10 V 0.005 Ciss 1500 0 Crss 0 0 10 20 30 40 50 0 6 ID – Drain Current (A) 24 30 On-Resistance vs. Junction Temperature Gate Charge 1.6 VDS = 15 V ID = 13.3 A r DS(on) – On-Resistance () (Normalized) V GS – Gate-to-Source Voltage (V) 18 VDS – Drain-to-Source Voltage (V) 10 8 6 4 2 VGS = 10 V ID = 13.3 A 1.4 1.2 1.0 0.8 0 0 20 40 60 80 100 0.6 –50 120 –25 0 Qg – Total Gate Charge (nC) 25 50 75 100 125 150 TJ – Junction Temperature (C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.030 r DS(on) – On-Resistance ( ) 50 I S – Source Current (A) 12 TJ = 150C 10 TJ = 25C 0.025 ID = 13.3 A 0.020 0.015 0.010 0.005 0 1 0 0.2 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Document Number: 71308 S-01828—Rev. A, 21-Aug-00 1.2 0 2 4 6 8 10 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si4427DY New Product Vishay Siliconix Single Pulse Power, Junction-to-Ambient 50 0.4 40 ID = 250 mA Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.2 0.0 –0.2 30 29 10 –0.4 –50 –25 0 25 50 75 100 125 150 0 10–2 10–1 TJ – Temperature (C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 www.vishay.com 4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71308 S-01828—Rev. A, 21-Aug-00