PNP Silicon AF and Switching Transistors BCX 42 BSS 63 For general AF applications ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BCX 41, BSS 64 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BCX 42 BSS 63 DKs BMs Q62702-C1485 Q62702-S534 B SOT-23 E C Maximum Ratings Parameter Symbol Values Unit BSS 63 BCX 42 Collector-emitter voltage VCE0 100 125 Collector-base voltage VCB0 110 125 Emitter-base voltage VEB0 5 5 Collector current IC 800 Peak collector current ICM 1 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 79 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg V mA A mA – 65 … + 150 Thermal Resistance Junction - ambient 2) Rth JA ≤ 285 Junction - soldering point Rth JS ≤ 215 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 42 BSS 63 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 125 100 – – – – 125 110 – – – – 5 – – – – – – – – – – 100 100 20 20 DC characteristics Collector-emitter breakdown voltage IC = 10 mA BCX 42 BSS 63 V(BR)CE0 Collector-base breakdown voltage1) IC = 100 µA BCX 42 BSS 63 V(BR)CB0 Emitter-base breakdown voltage, IE = 10 µA V(BR)EB0 Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 ˚C VCB = 100 V, TA = 150 ˚C ICB0 Collector cutoff current VCE = 100 V TA = 85 ˚C TA = 125 ˚C BSS 63 BCX 42 BSS 63 BCX 42 V µA ICE0 BCX 42 BCX 42 Emitter cutoff current, VEB = 4 V IEB0 DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 mA, VCE = 5 V IC = 20 mA, VCE = 5 V IC = 100 mA, VCE = 1 V IC = 200 mA, VCE = 1 V hFE BCX 42 BSS 63 BSS 63 BCX 42 BCX 42 nA nA µA µA – – – – 10 75 – – 100 nA – 25 30 30 63 40 – – – – – – – – – – – – – – – – 0.9 0.25 0.9 Collector-emitter saturation voltage1) IC = 300 mA, IB = 30 mA BCX 42 IC = 25 mA, IB = 2.5 mA BSS 63 IC = 75 mA, IB = 7.5 mA BSS 63 VCEsat V Base-emitter saturation voltage1) IC = 300 mA, IB = 30 mA BCX 42 VBEsat – – 1.4 Transition frequency IC = 20 mA, VCE = 5 V, f = 20 MHz fT – 150 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 12 – pF AC characteristics 1) Pulse test: t ≤ 300 µs, D = 2 % Semiconductor Group 2 BCX 42 BSS 63 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 1 V Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 3 BCX 42 BSS 63 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Collector cutoff current ICB0 = f (TA) VCB = VCEmax DC current gain hFE = f (IC) VCE = 1 V Semiconductor Group 4