SPI5842-H Semiconductor Photo Diode Features • Peak sensitivity wavelength matching with infrared LED(λP=950nm) • 4.8mm ×5.5mm side view package • Black colored visible light cut-off lens Application • Infrared remote controllers for TVs, VCRs, Audio equipment etc Outline Dimensions unit : mm 4.8±0.2 3.65±0.2 1.75 5.55±0.2 5.6±0.2 0.6 18.0±1.0 Typ.0.5 2.54 ① ② PIN Connections 1. Anode 2.Cathode KPE-0001-000 1 SPI5842-H Absolute maximum ratings Characteristic Symbol Ratings Unit Reverse Voltage VR 40 V Power Dissipation PD 170 mW Operating Temperature Topr -20～70 ℃ Storage Temperature Tstg -25～85 ℃ Tsol 260℃ for 5 seconds 1 * Soldering Temperature *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Symbol Test Condition Min Typ * Short Circuit Current ISC Ee=6mW/㎠ - 45 - uA Dark Current ID VR=10V - 50 - nA Capacitance Ct VR=10V, f=1MHz - 10 - pF Spectral Sensitivity Δλ - Peak Sensitivity Wavelength λP - - 940 - nm θ /2 - - ±55 - deg 1 Half angle 1 Max 840 ~ 1,050 Unit nm *1. Ee : Irradiance by infrared LED light source(λp=940nm) KPE-0001-000 2 SPI5842-H Characteristic Diagrams Fig. 1 ISC - Ee Fig. 2 ID - Ta 100 Dark Current ID [nA] Short Current ISC [uA] 1000 100 10 3 0.3 1 10 10 1 0.1 0.01 -20 100 Light Source [mW/㎠] 60 20 Ambient Temperature Ta [℃] Fig.4 ID – VR Fig. 3 Ct – VR 100 100 80 Dark Current ID [nA] Capacitance [Pf] 0 60 40 10 1 0.1 20 0 0 5 10 20 15 0.01 25 0 4 8 12 16 20 Reverse Voltage [v] Reverse Voltage [v] Fig.5 Spectrum Sensitivity Relative Intensity [%] 100 Ambient Temperature Ta [℃] 80 60 40 20 0 600 700 800 900 1000 1100 Wavelength λ [nm] KPE-0001-000 3