e PTB 20176 5 Watts, 1.78–1.92 GHz RF Power Transistor Description The 20176 is a common emitter RF power transistor intended for 26 Vdc operation from 1.78 to 1.92 GHz. Rated at 5 watts minimum output power, it is specifically designed for class A or AB linear power amplifier applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 26 Volt, 1.85 GHz Characteristics Class A/AB Internally Matched Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power Output Power (Watts) 10 8 201 76 6 LOT COD E 4 VCC = 26 V 2 ICQ = 30 mA f = 1850 MHz 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Package 20201 Input Power (Watts) Maximum Ratings Parameter Symbol Value Unit Collector-Emitter Voltage VCEO 20 Vdc Collector-Emitter Voltage VCES 45 Vdc Emitter-Base Voltage (collector open) VEBO 4.0 Vdc Collector Current (continuous) IC 1 Adc Total Device Dissipation at Tflange = 25°C Above 25°C derate by PD 21 Watts 0.12 W/°C Storage Temperature Tstg 150 °C Thermal Resistance (Tflange = 70°C) RθJC 8.5 °C/W 1 9/28/98 e PTB 20176 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Breakdown Voltage C to E IB = 0 A, IC = 5 mA, RBE = 22 Ω V(BR)CER 45 — — Volts Breakdown Voltage C to B IB = 0 A, IC = 5 mA V(BR)CBO 45 — — Volts Breakdown Voltage E to B IC = 0 A, IE = 5 mA V(BR)EBO 4 — — Volts DC Current Gain VCE = 5 V, IC = 200 mA hFE 20 — 100 — Output Capacitance VCB = 26 V, IE = 0 A, f = 1 MHz Cob — 7 — pF Symbol Min Typ Max Units Gpe 11 12 — dB P-1dB 6.3 7.9 — Watts ηC 38 42 — % IMD -30 -35 — dBc Ψ — — 10:1 — RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 30 mA, f = 1.85 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz) Intermodulation Distortion (VCC = 26 Vdc, Pout = 5 W(PEP), ICQ = 30 mA, f1 = 1.8800 GHz, f2 = 1.8801 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA, f = 1.85 GHz—all phase angles at frequency of test) Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 5 W, ICQ = 30 mA) Z Source Frequency Z Load Z Source Z Load GHz R jX R jX 1.800 7.8 -7.0 6.7 1.5 1.850 7.6 -6.4 6.7 2.3 1.900 7.5 -5.8 6.7 3.1 2 6/24/97 e PTB 20176 Typical Performance Gain vs. Frequency Intermodulation Distortion vs. Power Output -27 (as measured in a broadband circuit) 15 VCC = 26 V -30 ICQ = 30 mA IMD (dBc) Gain (dB) 14 13 12 VCC = 26 V ICQ = 30 mA Pout = 5 W 11 10 1775 f1 = 1880.0 MHz -33 f2 = 1880.1 MHz -36 -39 -42 1800 1825 1850 1875 1900 2 1925 3 Frequency (MHz) 4 5 6 7 Output Power (Watts-PEP) Efficiency vs. Output Power 60 Efficiency (%) 50 40 30 VCC = 26 V 20 ICQ = 30 mA f = 1850 MHz 10 0 2 4 6 8 10 Output Power (Watts) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: [email protected] www.ericsson.com/rfpower 3 6/24/97 Specifications subject to change without notice. LF © 1996 Ericsson Inc. EUS/KR 1301-PTB 20176 Uen Rev. C 09-28-98