ERICSSON PTB20219

e
PTB 20219
70 Watts, 925–960 MHz
Cellular Radio RF Power Transistor
Description
The 20219 is a class AB, NPN common emitter RF power transistor
intended for 26 Vdc operation across the 925 to 960 MHz frequency
band. It is rated at 70 watts minimum output power for both CW and
PEP applications. Ion implantation, nitride surface passivation and
gold metallization are used to ensure excellent device reliability. 100%
lot traceability is standard.
•
•
•
•
•
Typical Output Power vs. Input Power
70 Watts, 925–960 MHz
Class AB Characteristics
Guaranteed Performance at 26 Volts, 960
MHz
- Output Power = 70 Watts
- Collector Efficiency = 50% min. at 70 Watts
- IMD = -30 max. at 50 W(PEP)
Gold Metallization
Silicon Nitride Passivated
100
90
Output Power (Watts)
80
70
60
2021
9
50
LOT
40
20
f = 960 MHz
VCC = 26 V
10
ICQ = 0.200 A
30
COD
E
0
0
2
4
6
8
10
Input Power (Watts)
Package 20216
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
40
Vdc
Collector-Base Voltage
VCBO
65
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
20
Adc
Total Device Dissipation at Tflange = 25° C
PD
Above 25° C derate by
159
Watts
0.95
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70° C)
RθJC
1.1
°C/W
1
9/28/98
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PTB 20219
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Breakdown Voltage C to E
IB = 0 A, IC = 100 mA
V(BR)CEO
25
30
—
Volts
Breakdown Voltage C to E
VBE = 0 V, IC = 100 mA
V(BR)CES
55
70
—
Volts
Breakdown Voltage E to B
IC = 0 A, IE = 5 mA
V(BR)EBO
3.5
5
—
Volts
DC Current Gain
VCE = 5 V, IC = 1 A
hFE
20
50
100
—
Symbol
Min
Typ
Max
Units
Gain
(VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz)
Gpe
8.5
9.5
—
dB
Collector Efficiency
(VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA, f = 960 MHz)
ηC
50
—
—
%
Intermodulation Distortion
(VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA, f = 960 MHz)
IMD
—
-31
—
dBc
Ψ
—
—
10:1
—
RF Specifications (100% Tested)
Characteristic
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 50 W(PEP), ICQ = 200 mA,
f = 960 MHz—all phase angles at frequency of test)
Impedance Data
(data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 70 W, ICQ = 200 mA)
Z Source
Frequency
Z Load
Z Source
Z Load
MHz
R
jX
R
jX
925
2.0
2.4
2.1
1.6
942
2.0
2.9
2.1
1.8
960
2.1
3.4
2.2
2.0
Z0 = 10 Ω
2
9/11/97
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PTB 20219
Typical Characteristics
Output Power vs. Supply Voltage
Gain vs. Frequency
(as measured in a broadband circuit)
12
75
70
11
65
Gain (dB)
Output Power (Watts)
80
60
f = 960 MHz
VCC = 26 V
55
50
ICQ = 0.200 A
8
925
40
17
19
21
23
25
Pout = 70 W
VCC = 26 V
9
ICQ = 0.200 A
Pin = 6.5 W
45
10
27
930
935
Vcc, Supply Voltage
950
955
960
-15
f1 =959.900 MHz
70
-20
f2 = 960.000 MHz
IMD (dBc)
60
50
40
f = 960 MHz
VCC = 26 V
30
20
VCC = 26 V
-25
ICQ = 200 mA
-30
-35
ICQ = 0.200 A
10
-40
0
10
20
30
40
50
60
70
10
80
Output Power (Watts)
20
30
40
Output Power (Watts-PEP)
Test Circuit
Parts Layout (not to scale)
3
9/11/97
945
Intermodulation Distortion vs. Power Output
Efficiency vs. Output Power
80
Efficiency (%)
940
Frequency (MHz)
50
60
e
PTB 20219
Test Circuit
Schematic for test circuit
Q1
l1–l6
C1, C7
C2, C3
C4
C5
C6
Circuit Board
PTB 20219, NPN RF Transistor
Microstrip (see Artwork detail below)
51 pF, Capacitor ATC 100 B
3.0 pF, Capacitor ATC 100 B
7.5 pF, Capacitor ATC 100 B
6.2 pF, Capacitor ATC 100 B
4.3 pF, Capacitor ATC 100 B
.031” Thick, G-200, Solid Copper Bottom
Artwork (1 inch
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
)
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
4
Specifications subject to change without notice.
LF
© 1997 Ericsson Inc.
EUS/KR 1301-PTB 20219 Uen Rev. C 09-28-98