NTE NTE1116

NTE1116
Integrated Circuit
Audio Power Amplifier, 5W
Description:
The NTE1116 is a monolithic integrated circuit designed for use as a low frequency class B amplifier.
The external cooling tabs enable 2.5 watts of output power to be achieved without the use of an external heat sink and 5 watts of output power using a small area of the P.C. board copper as a heat sink.
Absolute Maximum Ratings:
Supply Voltage, VS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V
Output Peak Current (Non–Repetitive), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Output Current (Repetitive), IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5A
Power Dissipation, Ptot
TA = +70°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W
Ttab = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Tab, RthJ–TAB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12°C/W
Thermal Resistance, Junction–to–Ambient (Note 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . 70°C/W
Note 1. Obtained with tabs soldered to printed circuit with minimized copper area.
Elecrtrical Characteristics: (TA = +25°C, VS = 24V, RL = 16Ω unless otherwise specified)
Parameter
Symbol
Quiescent Output Voltage (Pin12)
Min
Typ
VO
11
12
13
V
Quiescent Drain Current
Id
–
9
20
mA
Input Bias Current (Pin8)
Ib
–
1
5
µA
Output Power
PO
4.4
5.0
–
W
220
–
–
mV
Input Saturation Voltage
Test Conditions
THD = 10%, f = 1kHz
Vi(rms)
Max Unit
Input Sensitivity
Vi
PO = 5W, f = 1kHz
–
80
–
mV
Input Resistance (Pin8)
Ri
f = 1kHz
–
5
–
MΩ
Frequency Response (–3dB)
B
C3 = 330pF
Total Harmonic Distortion
THD
Voltage Gain (Open Loop)
Voltage Gain (Closed Loop)
40 to 20,000
Hz
PO = 50mW to 2.5W, f = 1kHz
–
0.5
–
%
GV
f = 1kHz
–
80
–
dB
GV
f = 1kHz
39
42
45
dB
Elecrtrical Characteristics (Cont’d): (TA = +25°C, VS = 24V, RL = 16Ω unless otherwise specified)
Parameter
Symbol
Input Noise Voltage
eN
Input Noise Current
iN
Efficiency
η
Supply Voltage Rejection
Drain Current
SVR
Id
Test Conditions
Min
Typ
–
5
–
µV
–
0.2
–
nA
PO = 5W, f = 1kHz
–
75
–
%
fripple = 100Hz, C5 = 25µF
–
35
–
dB
fripple = 100Hz, C5 = 100µF
–
38
–
dB
PO = 5W
–
280
–
mA
B = 22Hz to 22kHz
Pin Connection Diagram
12 Output
N.C. 2
11 N.C.
VCC 3
10 GND
Tab
Tab
VCC 1
Bootstrap 4
9 Substrate GND
Compensation 5
8 Input
7 Ripple Rejection
Feedback 6
.247 (6.27)
12
7
1
6
.677
(17.2)
.770 (19.5) Max
.260 (6.6)
.233
(5.9)
Max
.100 (2.54)
.700 (17.78)
.099 (2.5) Min
Max Unit