ONSEMI NLAST4599

NLAST4599
Low Voltage Single Supply
SPDT Analog Switch
The NLAST4599 is an advanced high speed CMOS single pole double throw analog switch fabricated with silicon gate CMOS
technology. It achieves high speed propagation delays and low ON
resistances while maintaining low power dissipation. This switch
controls analog and digital voltages that may vary across the full
power-supply range (from VCC to GND).
The device has been designed so the ON resistance (RON) is much
lower and more linear over input voltage than RON of typical CMOS
analog switches.
The channel select input structure provides protection when voltages
between 0 V and 5.5 V are applied, regardless of the supply voltage. This
input structure helps prevent device destruction caused by supply voltage input/output voltage mismatch, battery backup, hot insertion, etc.
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•
•
•
•
•
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Select Pin Compatible with TTL Levels
Channel Select Input Over-Voltage Tolerant to 5.5 V
Fast Switching and Propagation Speeds
Break-Before-Make Circuitry
Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C
Diode Protection Provided on Channel Select Input
Improved Linearity and Lower ON Resistance over Input Voltage
Latch-up Performance Exceeds 300 mA
ESD Performance: HBM > 2000 V; MM > 200 V
Chip Complexity: 38 FETs
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MARKING
DIAGRAMS
SOT-23/TSOP-6/SC-59
DT SUFFIX
CASE 318G
SC-70/SC-88/SOT-363
DF SUFFIX
CASE 419B
A1d
1
A1d
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section of this data sheet.
SELECT 1
6
NO
V+ 2
5
COM
GND 3
4
NC
FUNCTION TABLE
Figure 1. Pin Assignment
2X1
U
COM
U
2X0
U
CHANNEL SELECT
Select
ON Channel
L
H
NC
NO
NO
NC
Figure 2. Logic Symbol
 Semiconductor Components Industries, LLC, 2002
November, 2002 - Rev. 6
1
Publication Order Number:
NLAST4599/D
NLAST4599
ABSOLUTE MAXIMUM RATINGS (Note 1)
Symbol
Parameter
Value
Unit
-0.5 to +7.0
V
-0.5 ≤ VIS ≤ VCC 0.5
V
-0.5 ≤ VI ≤ + 7.0
V
50
mA
200
200
mW
-65 to +150
°C
Lead Temperature, 1mm from Case for 10 seconds
260
°C
TJ
Junction Temperature Under Bias
150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
2000
200
N/A
V
ILATCH- UP
Latch-Up Performance
Above VCC and Below GND at
125°C (Note 5)
300
mA
JA
Thermal Resistance
333
333
°C/W
VCC
Positive DC Supply Voltage
VIS
Analog Input Voltage (VNO or VCOM)
VIN
Digital Select Input Voltage
IIK
DC Current, Into or Out of Any Pin
PD
Power Dissipation in Still Air
TSTG
Storage Temperature Range
TL
SC-88
TSOP6
SC-88
TSOP6
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute maximum-rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
2. Tested to EIA/JESD22-A114-A
3. Tested to EIA/JESD22-A115-A
4. Tested to JESD22-C101-A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Characteristics
Min
Max
Unit
2.0
5.5
V
Digital Select Input Voltage
GND
5.5
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
-55
+125
°C
tr, tf
Input Rise or Fall Time,
SELECT
0
0
100
20
ns/V
VCC = 3.3 V + 0.3 V
VCC = 5.0 V + 0.5 V
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
TJ = 80°C
Time, Years
TJ = 90°C
Time, Hours
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
TJ = 100°C
Junction
Temperature C
NORMALIZED FAILURE RATE
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
TJ = 110°C
VIN
TJ = 120°C
DC Supply Voltage
TJ = 130°C
Symbol
VCC
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
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2
NLAST4599
DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
VCC
-55 to 25C
<85C
<125C
Unit
VIH
Minimum High- Level
Input Voltage, Select
Input
3.0
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum Low- Level
Input Voltage, Select
Input
3.0
4.5
5.5
0.5
0.8
0.8
0.5
0.8
0.8
0.5
0.8
0.8
V
IIN
Maximum Input Leakage
Current, Select Input
VIN = 5.5 V or GND
5.5
+0.1
+1.0
+1.0
µA
IOFF
Power Off
Leakage Current
VIN = 5.5 V or GND
0
+10
+10
+10
µA
ICC
Maximum Quiescent
Supply Current
Select and VIS = VCC or GND
5.5
1.0
1.0
2.0
µA
VCC
-55 to 25C
<85C
<125C
Unit
DC ELECTRICAL CHARACTERISTICS - Analog Section
Guaranteed Limit
Symbol
Parameter
Condition
RON
Maximum “ON”
Resistance
(Figures 17 - 23)
VIN = VIL or VIH
VIS = GND to VCC
IINI < 10.0 mA
2.5
3.0
4.5
5.5
85
45
30
25
95
50
35
30
105
55
40
35
RFLAT
ON Resistance Flatness
(Figures 17 - 23)
VIN = VIL or VIH
IINI < 10.0 mA
VIS = 1V, 2V, 3.5V
4.5
4
4
5
ON Resistance Match
Between Channels
VIN = VIL or VIH
IINI < 10.0 mA
VNO or VNC = 3.5 V
4.5
2
2
3
(ON)
INC(OFF)
INO(OFF)
NO or NC Off Leakage
Current (Figure 9)
VIN = VIL or VIH
VNO or VNC = 1.0 VCOM 4.5 V
5.5
1
10
100
nA
ICOM(ON)
COM ON Leakage
Current (Figure 9)
VIN = VIL or VIH
VNO 1.0 V or 4.5 V with VNC
floating or
VNO 1.0 V or 4.5 V with VNO
floating
VCOM = 1.0 V or 4.5 V
5.5
1
10
100
nA
(ON)
RON
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3
NLAST4599
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Max Limit
Symbol
Parameter
VCC
VIS
-55 to 25C
<85C
<125C
Test Conditions
(V)
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
tON
Turn-On Time
(Figures 12 and 13)
RL = 300 CL = 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
5
5
2
2
23
16
11
9
28
21
16
14
5
5
2
2
30
25
20
20
5
5
2
2
30
25
20
20
ns
tOFF
Turn-Of f Time
(Figures 12 and 13)
RL = 300 CL = 35 pF
(Figures 5 and 6)
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
7
5
4
3
12
10
9
8
1
1
1
1
15
15
12
12
1
1
1
1
15
15
12
12
ns
tBBM
Minimum
Break- Before
Before- Make Time
Break
VIS = 3.0 V (Figure 4)
RL = 300 CL = 35 pF
F
2.5
3.0
4.5
5.5
2.0
2.0
3.0
3.0
1
1
1
1
12
11
6
5
1
1
1
1
1
1
1
1
ns
*Typical Characteristics are at 25C.
Typical @ 25, VCC = 5.0 V
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
VCC
Typical
V
25°C
Unit
BW
Maximum On-Channel -3dB Bandwidth or
Minimum Frequency Response
(Figure 10)
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 7)
3.0
3
0
45
4.5
55
5.5
170
200
200
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 7)
3.0
4.5
5.5
-2
2
-2
2
-2
dB
VISO
Off Channel Isolation
Off-Channel
(Figure 10)
f = 100 kHz
kHz; VIS = 1 V RMS
VIN centered between VCC and GND
(Figure 7)
3.0
4.5
5.5
-93
93
-93
93
-93
dB
Q
Charge Injection Select Input
In ut to
Common I/O
((Figure
g
15))
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3 ns
RIS = 0 , CL = 1000 pF
Q = CL * ∆VOUT
(Figure 8)
3.0
5.5
1.5
3.0
pC
C
Total Harmonic Distortion
THD + Noise
(Figure 14)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 ,
CL = 50 pF
VIS = 5.0 VPP sine wave
5.5
0.1
%
THD
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4
NLAST4599
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
300 Ω
tBMM
35 pF
90%
90% of VOH
Output
Switch Select Pin
GND
Figure 4. tBBM (Time Break-Before-Make)
VCC
DUT
VCC
0.1 F
Input
Output
50%
VOUT
Open
50%
0V
300 Ω
VOH
35 pF
90%
90%
Output
VOL
Input
tON
tOFF
Figure 5. tON/tOFF
VCC
VCC
Input
DUT
Output
300 Ω
50%
VOUT
Open
50%
0V
VOH
35 pF
Output
Input
tOFF
Figure 6. tON/tOFF
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5
10%
10%
VOL
tON
NLAST4599
50 Ω
DUT
Reference
Transmitted
Input
Output
50 Ω Generator
50 Ω
Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
VVOUT
for VIN at 100 kHz
IN
VOUT
for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3 dB below VONL
Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
On
VIN
Figure 8. Charge Injection: (Q)
100
LEAKAGE (nA)
10
1
ICOM(ON)
0.1
ICOM(OFF)
0.01
VCC = 5.0 V
INO(OFF)
0.001
-55
-20
25
70
85
TEMPERATURE (°C)
Figure 9. Switch Leakage vs. Temperature
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6
125
Off
∆VOUT
NLAST4599
0
Bandwidth
(ON-RESPONSE)
0
-40
PHASE (Degree)
-20
(dB)
Off Isolation
-60
10
20
30
VCC = 5.0 V
TA = 25C
-80
-100
0.01
0.1
VCC = 5.0 V
TA = 25C
100 200
1
10
FREQUENCY (MHz)
0.01
Figure 10. Bandwidth and Off-Channel
Isolation
0.1
100 200
1
10
FREQUENCY (MHz)
Figure 11. Phase vs. Frequency
30
30
25
25
20
20
TIME (ns)
TIME (ns)
VCC = 4.5 V
15
tON (ns)
10
tOFF (ns)
5
0
2.5
3
3.5
4
4.5
10
tON
5
tOFF
0
-55
5
-40
85
25
125
VCC (VOLTS)
Temperature (°C)
Figure 12. tON and tOFF vs. VCC at 25C
Figure 13. tON and tOFF vs. Temp
1
3.0
VINpp = 3.0 V
VCC = 3.6 V
2.5
2.0
Q (pC)
THD + NOISE (%)
15
0.1
VINpp = 5.0 V
VCC = 5.5 V
VCC = 5 V
1.5
1.0
0.5
VCC = 3 V
0
-0.5
0.01
1
10
100
0
1
2
3
4
FREQUENCY (kHz)
VCOM (V)
Figure 14. Total Harmonic Distortion
Plus Noise vs. Frequency
Figure 15. Charge Injection vs. COM Voltage
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7
5
NLAST4599
100
100
VCC = 2.0 V
10
80
RON (Ω)
ICC (nA)
1
0.1
0.01
0.001
60
VCC = 2.5 V
40
VCC = 3.0 V
VCC = 3.0 V
VCC = 4.0 V
20
0.0001
0.00001
-40
VCC = 5.0 V
-20
0
20
60
VCC = 5.5 V
80
100
0
0.0
120
3.0
4.0
5.0
VIS (VDC)
Figure 16. ICC vs. Temp, VCC = 3 V & 5 V
Figure 17. RON vs. VCC, Temp = 25C
90
90
80
80
70
70
60
60
RON (Ω)
100
RON (Ω)
2.0
Temperature (°C)
100
50
40
125°C
30
20
40
25°C
-55 °C
10
85°C
0.5
50
20
-55 °C
10
6.0
30
25°C
0
0.0
1.0
1.0
1.5
2.0
0
0.0
2.5
85°C
125°C
0.5
1.0
1.5
VIS (VDC)
2.0
2.5
3.0
VIS (VDC)
Figure 18. RON vs Temp, VCC = 2.0 V
Figure 19. RON vs. Temp, VCC = 2.5 V
50
30
45
25
40
20
30
RON (Ω)
RON (Ω)
35
25
20
125°C
10
15
85°C
10
5
0
0.0
15
-55 °C
0.5
25°C
1.0
1.5
2.0
2.5
3.0
3.5
25°C
5
-55 °C
0
0.0
0.5
1.0
1.5
85°C
2.0
125°C
2.5
3.0
3.5
4.0
VIS (VDC)
VIS (VDC)
Figure 21. RON vs. Temp, VCC = 4.5 V
Figure 20. RON vs. Temp, VCC = 3.0 V
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8
4.5
NLAST4599
25
25
125°C
20
20
RON (Ω)
RON (Ω)
125°C
15
25°C
10
-55 °C
85°C
15
25°C
10
85°C
5
0
0.0
-55 °C
5
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
5.0
VIS (VDC)
VIS (VDC)
Figure 22. RON vs. Temp, VCC = 5.0 V
Figure 23. RON vs. Temp, VCC = 5.5 V
DEVICE ORDERING INFORMATION
Device Nomenclature
Device
Order Number
Technology
Device
Function
Package
Suffix
Tape &
Reel
Suffix
Package Type
(Name/SOT#/
Common Name)
Tape and Reel
Size
NL
AS
4599
DF
T2
SC-70 / SC-88
/ SOT-363
178 mm (7”)
3000 Unit
NL
AS
4599
DT
T1
SOT-23 / TSOP-6
/ SC-59
178 mm (7”)
3000 Unit
Circuit
Indicator
NLAST4599DFT2
NLAST4599DTT1
CAVITY
TAPE
TOP TAPE
TAPE TRAILER
(Connected to Reel Hub)
NO COMPONENTS
160 mm MIN
COMPONENTS
TAPE LEADER
NO COMPONENTS
400 mm MIN
DIRECTION OF FEED
Figure 24. Tape Ends for Finished Goods
TAPE DIMENSIONS mm
4.00
1.50 TYP
4.00
2.00
1.75
3.50 0.50
8.00 0.30
1
1.00 MIN
DIRECTION OF FEED
Figure 25. SC70-6/SC-88/SOT-363 DFT2 and SOT23-6/TSOP-6/SC59-6 DTT1 Reel Configuration/Orientation
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9
NLAST4599
t MAX
1.5 mm MIN
(0.06 in)
A
13.0 mm 0.2 mm
(0.512 in 0.008 in)
50 mm MIN
(1.969 in)
20.2 mm MIN
(0.795 in)
FULL RADIUS
G
Figure 26. Reel Dimensions
REEL DIMENSIONS
Tape Size
T and R Suffix
A Max
G
t Max
8 mm
T1, T2
178 mm
(7 in)
8.4 mm, + 1.5 mm, -0.0
(0.33 in + 0.059 in, -0.00)
14.4 mm
(0.56 in)
DIRECTION OF FEED
BARCODE LABEL
POCKET
Figure 27. Reel Winding Direction
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10
HOLE
NLAST4599
PACKAGE DIMENSIONS
SC70-6/SC-88/SOT-363
DF SUFFIX
CASE 419B-02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
G
6
5
4
1
2
3
DIM
A
B
C
D
G
H
J
K
N
S
-B-
S
D 6 PL
0.2 (0.008)
M
B
M
N
J
C
K
H
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
1.9 mm
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11
0.65 mm 0.65 mm
0.4 mm (min)
0.5 mm (min)
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.004
0.012
0.026 BSC
−−−
0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
−−−
0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
NLAST4599
PACKAGE DIMENSIONS
SOT23-6/TSOP-6/SC59-6
DT SUFFIX
CASE 318G-02
ISSUE H
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
S
1
5
4
2
3
B
DIM
A
B
C
D
G
H
J
K
L
M
S
D
G
M
J
C
0.05 (0.002)
K
H
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
0.037
0.95
0.074
1.9
0.037
0.95
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0
10 2.50
3.00
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
10 0.0985 0.1181
0.094
2.4
0.039
1.0
0.028
0.7
inches
mm
ON Semiconductor and
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changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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