Phototransistors PNZ150 (PN150) Silicon planar type Unit: mm For optical control systems 4.2±0.3 4.5±0.3 φ3.5±0.2 (1.8) 2-0.98±0.2 2-0.45±0.15 10.0 min. 12.8 min. (2.8) • High sensitivity • Wide spectral sensitivity characteristics, suited for detecting GaAs LEDs • Low dark current • Side-view plastic mold type package (1.0) 4.8±0.3 (2.4) (2.4) ■ Features 0.45±0.15 ■ Absolute Maximum Ratings Ta = 25°C (2.54) Parameter Symbol Rating Collector-emitter voltage (Base open) VCEO 20 V IC 20 mA Collector power dissipation PC 100 mW Operating ambient temperature Topr −25 to +85 °C Storage temperature Tstg −30 to +100 °C (1.2) (R1.75) Unit Collector current (1.9) Not soldered (2.3) 1 2 1: Emitter 2: Collector LSTLR102-003 Package ■ Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit ICE(L) VCE = 10 V, L = 500 lx ICEO VCE = 10 V 0.01 Peak emission wavelength λp VCE = 10 V 800 nm Half-power angle θ The angle from which photocurrent becomes 50% 35 ° Rise time *2 tr VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω 4 µs Photocurrent *1 Dark current Fall time *2 1.0 tf Collector-emitter saturation voltage *1 VCE(sat) 3.0 mA 1.00 µs 4 ICE(L) = 1 mA, L = 1 000 lx 0.2 µA 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be dis regarded radiation. 4. *1: Source: Tungsten (color temperature 2 856 K) *2: Switching time measurement circuit Sig. in VCC (Input pulse) 50 Ω Sig. out RL 90% 10% (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: April 2004 SHE00018BED 1 PNZ150 PC Ta ICE(L) VCE 20 100 ICE(L) L Ta = 25°C T = 2 856 K VCE = 10 V Ta = 25°C T = 2 856 K 102 16 80 60 40 L = 2 000 lx 1 750 lx 1 500 lx 12 1 250 lx 1 000 lx 8 750 lx 500 lx 4 20 Photocurrent ICE(L) (mA) Photocurrent ICE(L) (mA) Collector power dissipation PC (mW) 120 10 1 10−1 10−2 250 lx 0 −20 0 20 40 60 80 0 100 100 lx 0 4 8 16 20 10−3 24 1 ICE(L) Ta 103 104 Illuminance L (lx) ICEO Ta 10 VCE = 10 V T = 2 856 K 102 10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 102 12 Spectral sensitivity characteristics 100 VCE = 10 V VCE = 10 V Ta = 25°C L = 1 000 lx Relative sensitivity ∆S (%) Dark current ICEO (µA) 10 −1 10 500 lx 10 −2 1 −40 0 40 80 10 −3 −40 120 Ambient temperature Ta (°C) 0 10° 20 30° 400 40° 50° 60° 600 800 1 000 tf ICE(L) VCC = 10 V Ta = 25°C 104 103 102 RL = 1 kΩ 500 Ω 10 100 Ω 102 RL = 1 kΩ 500 Ω 10 100 Ω 70° 80° 1 200 Wavelength λ (nm) 103 Rise time tr (µs) 40 20 0 200 120 VCC = 10 V Ta = 25°C 104 Relative sensitivity ∆S (%) 60 40 tr ICE(L) 20° 100 80 80 60 Ambient temperature Ta (°C) Directivity characteristics 0° 40 Fall time tf (µs) Photocurrent ICE(L) (mA) 80 1 1 1 90° 10−1 −2 10 10−1 1 10 Photocurrent ICE(L) (mA) 2 SHE00018BED 102 10−1 −2 10 10−1 1 10 Photocurrent ICE(L) (mA) 102 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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