Silicon Switching Diode Array SMBD 7000 For high-speed switching applications ● Connected in series ● Type Marking Ordering Code (tape and reel) SMBD 7000 s5C Q68000-A8440 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 100 V Peak reverse voltage VRM 100 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS = 31 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg – 65 … + 150 Junction - ambient2) Rth JA ≤ 500 Junction - soldering point Rth JS ≤ 360 Thermal Resistance 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 SMBD 7000 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Values Symbol Unit min. typ. max. 100 – – 550 670 750 – – – 700 820 1100 – – – – – – 300 500 100 nA nA µA DC characteristics Breakdown voltage V(BR) Forward voltage IF = 1 mA IF = 10 mA IF = 100 mA VF Reverse current VR = 50 V VR = 100 V VR = 50 V, TA = 125 ˚C IR V mV AC characteristics Diode capacitance VR = 0, f = 1 MHz CD – – 2 pF Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω trr – – 15 ns Test circuit for reverse recovery time Pulse generator: tp = 100 ns, D = 0.05 tr = 0.6 ns, Rj = 50 Ω Oscillograph: Semiconductor Group 2 R = 50 Ω tr = 0.35 ns C ≤ 1 pF SMBD 7000 Forward current IF= f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) TA = 25 ˚C Semiconductor Group 3 SMBD 7000 Forward voltage VF = f (TA) Semiconductor Group 4