Power Transistors 2SC1846 Silicon NPN epitaxial planar type For medium output power amplification Complementary to 2SA0885 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO 45 V Collector-emitter voltage (Base open) VCEO 35 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 1.5 A Collector power dissipation PC 1.2 W 1 3.05±0.1 3.8±0.3 1.9±0.1 • Low collector-emitter saturation voltage VCE(sat) • Output of 3 W can be obtained by a complementary pair with 2SA0885 • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 5.0 * Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *: With a 100 × 100 × 2 mm Al heat sink ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 45 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 35 Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 20 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 10 µA 340 Forward current transfer ratio hFE1 * hFE2 Collector-emitter saturation voltage Transition frequency VCE(sat) 85 VCE = 5 V, IC = 1 A 50 Typ Max Unit V V IC = 500 mA, IB = 50 mA VCB = 10 V, IE = 0, f = 1 MHz Cob Min VCE = 10 V, IC = 500 mA VCB = 10 V, IE = −50 mA, f = 200 MHz fT Collector output capacitance (Common base, input open circuited) Conditions 0.5 200 V MHz 20 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 85 to 170 120 to 240 170 to 340 Publication date: February 2003 SJD00094BED 1 2SC1846 PC Ta VCE=10V Ta=25˚C 1.25 4 3 (1) 2 7mA 6mA 0.75 5mA 4mA 0.50 3mA 2mA 0.25 1 0 80 120 160 200 0 2 IC/IB=10 1 TC=100˚C 25˚C –25˚C 0.01 0.1 8 0 10 0 2 (V) Collector output capacitance C (pF) (Common base, input open circuited) ob 120 80 40 −10 Emitter current IE (mA) −100 8 TC=–25˚C 1 100˚C 25˚C 0.1 0.1 12 TC=100˚C 25˚C –25˚C 100 10 1 0.01 1 0.1 1 Collector current IC (A) VCER RBE 100 50 IE=0 f=1MHz TC=25˚C 40 30 20 10 0 10 VCE=10V Cob VCB 160 6 hFE IC Collector current IC (A) VCB=10V f=200MHz TC=25˚C 4 Base current IB (mA) 1000 fT I E Transition frequency fT (MHz) 0.2 IC/IB=10 0.01 0.01 1 200 2 6 10 Collector current IC (A) 0 −1 0.4 VBE(sat) IC Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) VCE(sat) IC 0.001 0.01 4 Collector-emitter voltage VCE Ambient temperature Ta (°C) 0.1 0.6 Forward current transfer ratio hFE 40 0.8 1mA (2) 0 9mA 8mA 1.00 Collector current IC (A) IB=10mA 1.0 1 10 Collector-base voltage VCB (V) SJD00094BED 100 Collector-emitter voltage (V) (Resistor between B and E) VCER 5 0 IC I B 1.2 TC=25˚C (1)With a 100×100×2mm Al heat sink (2)Without heat sink Collector current IC (A) Collector power dissipation PC (W) IC VCE 1.50 6 IC=10mA TC=25˚C 80 60 40 20 0 0.1 1 10 100 Base-emitter resistance RBE (kΩ) 2SC1846 ICEO Ta 104 Safe operation area 10 VCE=10V Single pulse TC=25˚C ICP Collector current IC (A) ICBO (Ta) ICBO (Ta = 25°C) 103 102 10 1 0 40 80 120 Ambient temperature Ta (°C) 160 1 IC t=10ms t=1s 0.1 0.01 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) SJD00094BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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