SHINDENGEN 3 Phase Bridge Diode Diode Module OUTLINE DIMENSIONS S10VT60 Case : 2F: SVT Case (Unit : mm) 600V 10A FEATURES ●Dual In-Line Package ●Compact 3 phase bridge ●High IFSM ●Applicable to mount on glass-epoxy substrate (VTA type) APPLICATION ●Big Power Supply ●Air conditioner ●Factory Automation, Inverter RATINGS ● Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Average Rectified Forward Current 50Hz sine wave, R-load, With heatsink, Tc=137℃ IO Peak Surge Forward Current Current Squared Time Dielectric Strength Mounting Torque IFSM 50Hz sine wave, Non-repetitive 1cycle peak value, Rating of per diode, Tj=25℃ 2 I t 1ms≦t＜10ms Ｔc=25℃ Vdis Terminals to case, AC 1 minute TOR （Recommended torque : 0.6N･m） ● Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage VF IF=3.5A, Pulse measurement, Rating of per diode Reverse Current Thermal Resistance IR θjc VR=VRM, Pulse measurement, Rating of per diode junction to case Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -40～150 150 600 10 Unit ℃ ℃ V A 170 A 110 2 0.8 A2s kV N･m Ratings Max.1.05 Unit V Max.10 μA Max.0.65 ℃/W S10VTx Forward Voltage Forward Current IF [A] 10 Tc=150°C [TYP] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 S10VTx Forward Power Dissipation 40 Forward Power Dissipation PF [W] 35 SIN 30 25 20 15 10 5 0 0 5 10 15 Average Rectified Forward Current IO [A] Tj = 150°C Sine wave 20 S10VTx Derating Curve 25 Average Rectified Forward Current IO [A] + - Heatsink 20 Tc SIN 15 10 5 0 0 20 40 60 80 100 120 Case Temperature Tc [°C] VR = VRM Sine wave R-load with heatsink 140 160 S10VTx Peak Surge Forward Capability IFSM 300 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] 250 non-repetitive, sine wave, Tj=25°C before surge current is applied, per diode 200 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100