Transistor 2SD1328 Silicon NPN epitaxial planer type For low-voltage output amplification For muting For DC-DC converter Unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 +0.2 1.45 0.95 0.4 –0.05 2.9 –0.05 3 2 Symbol Ratings Unit VCBO 25 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 12 V Peak collector current ICP 1 A Collector current IC 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector 0 to 0.1 Parameter 0.16 –0.06 (Ta=25˚C) Collector to base voltage ■ Electrical Characteristics 1 0.8 ■ Absolute Maximum Ratings 1.9±0.2 ● Low collector to emitter saturation voltage VCE(sat). Low ON resistance Ron. High foward current transfer ratio hFE. +0.2 ● 1.1 –0.1 ● 0.95 ■ Features JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : 1D (Ta=25˚C) Parameter Symbol Conditions min typ VCB = 25V, IE = 0 max Unit 100 nA Collector cutoff current ICBO Collector to base voltage VCBO IC = 10µA, IE = 0 25 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 20 V Emitter to base voltage VEBO IE = 10µA, IC = 0 12 Forward current transfer ratio hFE*1 VCE = 2V, IC = 0.5A*2 200 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 20mA*2 Base to emitter saturation voltage VBE(sat) IC = 0.5A, IB = 50mA*2 Transition frequency fT VCB = 10V, IE = –50mA, f = 200MHz 200 MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz 10 pF ON resistanse Ron*3 V 800 0.13 FE V 1.2 V Ω 1.0 *2 *1h 0.4 *3R on Rank classification Pulse measurement Measurement circuit 1kΩ Rank R S T hFE 200 ~ 350 300 ~ 500 400 ~ 800 Marking Symbol 1DR 1DS 1DT IB=1mA VB Ron= VV VA f=1kHz V=0.3V VB ✕1000(Ω) VA–VB 1 Transistor 2SD1328 PC — Ta IC — VCE 200 120 80 40 3.0mA 0.8 2.5mA 2.0mA 0.6 1.5mA 0.4 1.0mA 0.5mA 0.2 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 4 5 6 30 3 25˚C Ta=–25˚C 75˚C 0.3 0.1 0.03 0.3 1 3 10 Collector current IC (A) IE=0 Ta=25˚C f=1MHz 20 16 12 8 4 0 1 3 10 3 1 Ta=75˚C 0.3 25˚C 0.1 –25˚C 0.03 0.01 0.01 0.03 30 100 Collector to base voltage VCB (V) 0.1 0.3 800 Ta=75˚C 600 1 3 10 400 VCB=10V Ta=25˚C VCE=2V 25˚C –25˚C 400 200 350 300 250 200 150 100 50 0 0.01 0.03 0.1 0.3 1 3 Collector current IC (A) Cob — VCB 24 10 fT — I E 1000 10 0.1 30 Collector current IC (A) 1200 Forward current transfer ratio hFE IC/IB=10 0.01 0.01 0.03 IC/IB=25 hFE — IC 100 1 100 Collector to emitter voltage VCE (V) VBE(sat) — IC Base to emitter saturation voltage VBE(sat) (V) 3 Transition frequency fT (MHz) 0 Collector output capacitance Cob (pF) Ta=25˚C 3.5mA 1.0 160 Collector to emitter saturation voltage VCE(sat) (V) IB=4.0mA 0 2 VCE(sat) — IC 1.2 Collector current IC (A) Collector power dissipation PC (mW) 240 10 0 –1 –3 –10 –30 Emitter current IE (A) –100