ONSEMI 2N5039

Order this document
by 2N5038/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
. . . fast switching speeds and high current capacity ideally suit these parts for use in
switching regulators, inverters, wide–band amplifiers and power oscillators in
industrial and commercial applications.
20 AMPERE
NPN SILICON
POWER TRANSISTORS
75 and 90 VOLTS
140 WATTS
• High Speed — tf = 0.5 µs (Max)
• High Current — IC(max) = 30 Amps
• Low Saturation — VCE(sat) = 2.5 V (Max) @ IC = 20 Amps
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v
v
CASE 1–07
TO–204AA
(TO–3)
*MAXIMUM RATINGS
Rating
Symbol
2N5038
2N5039
Unit
Collector–Base Voltage
VCBO
150
120
Vdc
Collector–Emitter Voltage
VCEV
150
120
Vdc
Emitter–Base Voltage
VEBO
7
Vdc
IC
ICM
20
30
Adc
Collector Current — Continuous
Peak (1)
Base Current — Continuous
IB
5
Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C
PD
140
0.8
Watts
W/_C
TJ, Tstg
– 65 to + 200
_C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
RθJC
1.25
_C/W
Thermal Resistance, Junction to Case
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
10 ms, Duty Cycle
50%.
VCC
+ 30 V
RC
2.5
+11 V
10 Ω
PW = 20 µs
DUTY CYCLE = 1%
0
1N4933
–9 V
–5 V
2N5038
IC = 12 AMPS
IB1 = IB2 = 1.2 AMPS
2N5039
IC = 10 AMPS
IB1 = IB2 = 1.0 AMPS
Figure 1. Switching Time Test Circuit
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 7
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
90
75
—
—
—
—
—
—
50
50
10
10
—
—
—
5
15
50
20
20
100
100
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
2N5038
2N5039
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 V)
(VCE = 110 Vdc, VBE(off) = 1.5 V)
(VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
(VCE = 85 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
Vdc
ICEX
2N5038
2N5039
2N5038
2N5039
Emitter Cutoff Current
(VEB = 5 Vdc, IC = 0)
mAdc
IEBO
2N5038
2N5039
Both
(VEB = 7 Vdc, IC = 0)
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 12 Adc, VCE = 5 Vdc)
(IC = 10 Adc, VCE = 5 Vdc)
hFE
2N5038
2N5039
—
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VCE(sat)
—
2.5
Vdc
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 5 Adc)
VBE(sat)
—
3.3
Vdc
|hfe|
12
—
—
tr
—
0.5
µs
DYNAMIC CHARACTERISTICS
Magnitude of Common–Emitter Small–Signal Short–Circuit
Forward Current Transfer Ratio
(IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz)
SWITCHING CHARACTERISTICS
RESISTIVE LOAD
Rise Time
(VCC = 30 Vdc)
Storage Time
(IC = 12 Adc, IB1 = IB2 = 1.2 Adc)
2N5038
ts
—
1.5
µs
Fall Time
(IC = 10 Adc, IB1 = IB2 = 1 Adc)
2N5039
tf
—
0.5
µs
* Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width
300, µs, Duty Cycle
v
v 2%.
IC, COLLECTOR CURRENT (AMPS)
100
50
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
Second breakdown pulse limits are valid for duty cycles to
10%. At high case temperatures, thermal limitations may reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
20
dc
10
5
2
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
TC = 25°C
2N5039
1
0.5
0.2
0.1
2N5038
1
2
3
5 7 10
20 30
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
Figure 2. Forward Bias Safe Operating Area
2
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
–T–
E
D
K
2 PL
0.13 (0.005)
U
T Q
M
M
Y
M
–Y–
L
V
SEATING
PLANE
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
Motorola Bipolar Power Transistor Device Data
3
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4
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Motorola Bipolar Power Transistor Device Data
*2N5038/D*
2N5038/D