2SK1278 N-channel MOS-FET F-V Series 500V > Features 1,1Ω 10A 100W > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 500 10 40 10 ±20 100 150 -55 ~ +150 Unit V A A A V W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Symbol V (BR)DSS V GS(th) I DSS Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) I R g C C C t t t t V t Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time - Thermal Characteristics Item Thermal Resistance GSS DS(on) fs iss oss rss d(on) r d(off) f SD rr Symbol R th(ch-a) R th(ch-c) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=500V Tch=25°C VGS=0V VGS=±20V VDS=0V ID=5A VGS=10V ID=5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=10A VGS=10V RGS=25 Ω IF=IDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 500 2,1 Test conditions channel to air channel to case Min. 4 Typ. Max. 3,0 10 4,0 500 10 0,8 8 1100 140 75 25 60 200 90 0,95 150 100 1,1 Typ. Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX -75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com Unit V V µA 1600 210 110 40 90 300 140 1,8 200 nA Ω S pF pF pF ns ns ns ns V ns Max. 35 1,25 Unit °C/W °C/W 2SK1278 N-channel MOS-FET 500V 1,1Ω 10A F-V Series 100W > Characteristics Typical Output Characteristics ↑ Drain-Source-On-State Resistance vs. Tch ↑ → Tch [°C] Typical Drain-Source-On-State-Resistance vs. ID → Gate Threshold Voltage vs. Tch ↑ Tch [°C] VDS [V] → ↑ ↑ VGS [V] IF [A] 8 Qg [nC] → Forward Characteristics of Reverse Diode VDS [V] C [nF] → Typical Input Charge ↑ 7 6 VGS(th) [V] 5 ID [A] Typical Capacitance vs. VDS → VGS [V] gfs [S] RDS(ON) [Ω] ID [A] ↑ → Typical Forward Transconductance vs. ID ↑ 4 4 3 ID [A] ID [A] VDS [V] ↑ ↑ 2 RDS(ON) [Ω] 1 Typical Transfer Characteristics 9 → VSD [V] → Safe operation area Zth(ch-c) [K/W] ↑ 10 11 ID [A] ↑ Transient Thermal impedance VDS [V] → t [s] This specification is subject to change without notice! →