MAXIM MAX19985AETX+

19-4185; Rev 0; 8/08
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
The MAX19985A high-linearity, dual-channel, downconversion mixer is designed to provide approximately
8.7dB gain, +25.5dBm of IIP3, and 9.0dB of noise figure for 700MHz to 1000MHz diversity receiver applications. With an optimized LO frequency range of
900MHz to 1300MHz, this mixer is ideal for high-side
LO injection architectures in the cellular and new
700MHz bands. Low-side LO injection is supported by
the MAX19985, which is pin-pin and functionally compatible with the MAX19985A.
In addition to offering excellent linearity and noise performance, the MAX19985A also yields a high level
of component integration. This device includes two
double-balanced passive mixer cores, two LO buffers,
a dual-input LO selectable switch, and a pair of differential IF output amplifiers. On-chip baluns are also integrated to allow for single-ended RF and LO inputs.
The MAX19985A requires a nominal LO drive of 0dBm
and a typical supply current of 330mA at VCC = +5.0V
or 280mA at VCC = +3.3V.
The MAX19985/MAX19985A are pin compatible with
the MAX19995/MAX19995A series of 1700MHz to
2200MHz mixers and pin similar with the MAX19997A/
MAX19999 series of 1850MHz to 3800MHz mixers,
making this entire family of downconverters ideal for
applications where a common PCB layout is used
across multiple frequency bands.
The MAX19985A is available in a 6mm x 6mm, 36-pin
thin QFN package with an exposed pad. Electrical performance is guaranteed over the extended temperature
range of TC = -40°C to +85°C.
Applications
850MHz WCDMA and cdma2000® Base Stations
Features
o 700MHz to 1000MHz RF Frequency Range
o 900MHz to 1300MHz LO Frequency Range
o 50MHz to 500MHz IF Frequency Range
o 8.7dB Typical Conversion Gain
o 9.0dB Typical Noise Figure
o +25.5dBm Typical Input IP3
o +12.6dBm Typical Input 1dB Compression Point
o 76dBc Typical 2LO-2RF Spurious Rejection at
PRF = -10dBm
o Dual Channels Ideal for Diversity Receiver
Applications
o 48dB Typical Channel-to-Channel Isolation
o Low -3dBm to +3dBm LO Drive
o Integrated LO Buffer
o Internal RF and LO Baluns for Single-Ended
Inputs
o Built-In SPDT LO Switch with 46dB LO1-to-LO2
Isolation and 50ns Switching Time
o Pin Compatible with the MAX19995/MAX19995A
Series of 1700MHz to 2200MHz Mixers
o Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 3800MHz Mixers
o Single +5.0V or +3.3V Supply
o External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
700MHz LTE/WiMAX™ Base Stations
Ordering Information
GSM850/900 2G and 2.5G EDGE Base Stations
iDEN® Base Stations
PART
TEMP RANGE
PIN-PACKAGE
Fixed Broadband Wireless Access
MAX19985AETX+
-40°C to +85°C
36 Thin QFN-EP*
Wireless Local Loop
MAX19985AETX+T
-40°C to +85°C
36 Thin QFN-EP*
Private Mobile Radios
+Denotes a lead-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Military Systems
cdma2000 is a registered trademark of Telecommunications
Industry Association.
Typical Application Circuit and Pin Configuration appear at
end of data sheet.
WiMAX is a trademark of WiMAX Forum.
iDEN is a registered trademark of Motorola, Inc.
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
1
MAX19985A
General Description
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
θJA (Notes 2, 3)..............................................................+38°C/W
θJC (Note 3).....................................................................7.4°C/W
Operating Temperature Range (Note 4) .....TC = -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
VCC to GND ...........................................................-0.3V to +5.5V
LO1, LO2 to GND ...............................................................±0.3V
Any Other Pins to GND...............................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power ..........................+15dBm
RFMAIN, RFDIV Current (RF is DC shorted
to GND through balun)....................................................50mA
Continuous Power Dissipation (Note 1) ..............................8.8W
Note 1: Based on junction temperature TJ = TC + (θJC x VCC x ICC). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the Applications Information section for details. The junction
temperature must not exceed +150°C.
Note 2: Junction temperature TJ = TA + (θJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
+5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, TC = -40°C to +85°C. Typical values are at VCC = 5.0V, TC = +25°C, all parameters are production tested, unless otherwise noted.)
PARAMETER
SYMBOL
Supply Voltage
VCC
Supply Current
ICC
LOSEL Input High Voltage
VIH
LOSEL Input Low Voltage
VIL
LOSEL Input Current
CONDITIONS
MIN
TYP
MAX
UNITS
4.75
5
5.25
V
330
380
mA
2
IIH, IIL
V
-10
0.8
V
+10
µA
+3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, TC = -40°C to +85°C. Typical values are at VCC = 3.3V, TC = +25°C, all parameters
are guaranteed by design and not production tested, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
3.0
3.3
3.6
V
Supply Voltage
VCC
R2 = R5 = 600Ω
Supply Current
ICC
Total supply current, VCC = 3.3V
280
mA
LOSEL Input High Voltage
VIH
2
V
LOSEL Input Low Voltage
VIL
0.8
V
2
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
MAX
UNITS
RF Frequency
PARAMETER
fRF
(Note 5)
700
1000
MHz
LO Frequency
fLO
(Note 5)
900
1300
MHz
100
500
fIF
Using Mini-Circuits TC4-1W-17 4:1 transformer
as defined in the Typical Application Circuit,
IF matching components affect the IF
frequency range (Note 5)
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer, IF matching components
affect the IF frequency range (Note 5)
50
250
(Note 5)
-3
+3
IF Frequency
LO Drive Level
SYMBOL
PLO
CONDITIONS
MIN
TYP
MHz
dBm
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm,
PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical values
are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Power Gain
SYMBOL
GC
CONDITIONS
MIN
TYP
MAX
fIF = 200MHz, fRF = 824MHz to 915MHz,
TC = -40°C to +85°C
7.0
8.7
10.2
fIF = 200MHz, fRF = 824MHz to 915MHz,
TC = +25°C (Note 9)
7.7
8.7
9.7
0.15
0.3
dB
Conversion Power Gain Variation
vs. Frequency
ΔGC
Flatness over any one of three frequency
bands:
fRF = 824MHz to 849MHz,
fRF = 869MHz to 894MHz,
fRF = 880MHz to 915MHz (Note 9)
Gain Variation Over Temperature
TCG
TC = -40°C to +85°C
-0.012
TC = -40°C to +85°C
9.2
11.5
fRF = 850MHz, fIF = 200MHz,
PLO = 0dBm, TC = +25°C, VCC = +5.0V
9.0
10.3
Noise Figure
NF
Noise Figure Temperature
Coefficient
TCNF
TC = -40°C to +85°C
0.018
Noise Figure Under Blocking
Condition
NFB
+8dBm blocker tone applied to RF port,
fRF = 900MHz, fLO = 1090MHz,
PLO = -3dBm, fBLOCKER = 800MHz,
VCC = +5.0V (Note 7)
18.8
Input 1dB Compression Point
IP1dB
Third-Order Input Intercept Point
IIP3
UNITS
TC = -40°C to +85°C
10.0
12.6
TC = +25°C (Note 9)
11.0
12.6
fRF = 824MHz to 915MHz,
fRF1 - fRF2 = 1MHz, fIF = 200MHz,
PRF = -5dBm/tone, TC = -40°C to +85°C
22.5
25.5
fRF = 824MHz to 915MHz,
fRF1 - fRF2 = 1MHz, fIF = 200MHz,
PRF = -5dBm/tone, TC = +25°C (Note 9)
23.5
dB
dB/°C
dB
dB/°C
22
dB
dBm
dBm
25.5
_______________________________________________________________________________________
3
MAX19985A
RECOMMENDED AC OPERATING CONDITIONS
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
+5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, VCC = +4.75V to +5.25V, RF and LO ports are driven from 50Ω sources, PLO = -3dBm to +3dBm,
PRF = -5dBm, fRF = 700MHz to 1000MHz, fLO = 900MHz to 1200MHz, fIF = 200MHz, fRF < fLO, TC = -40°C to +85°C. Typical values
are at VCC = +5.0V, PRF = -5dBm, PLO = 0dBm, fRF =900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, all parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
2LO-2RF Spur Rejection
2x2
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 900MHz
3LO-3RF Spur Rejection
3x3
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 933.3MHz
MIN
TYP
PRF = -10dBm
-63
-76
PRF = -5dBm
(Note 9)
-58
-71
PRF = -10dBm
-65
-78
PRF = -5dBm
(Note 9)
-60
-73
MAX
UNITS
dBc
dBc
fLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)
-40
-20
fLO = 900MHz to 1200MHz, PLO = +3dBm
(Note 10)
-38
-25
fLO = 1200MHz to 1300MHz, PLO = +3dBm
(Note 10)
-35
-22
3LO Leakage at RF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)
-50
-28
dBm
4LO Leakage at RF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 9)
-25
-15
dBm
LO Leakage at IF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
(Note 10)
-35
-23
dBm
RF-to-IF Isolation
fRF = 824MHz to 915MHz (Note 10)
30
38
dB
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 900MHz, fLO2 = 901MHz,
PRF = -5dBm (Notes 8, 10)
40
46
dB
Channel-to-Channel Isolation
RFMAIN (RFDIV) converted power measured
at IFDIV (IFMAIN), relative to IFMAIN (IFDIV),
all unused ports terminated to 50Ω (Note 9)
40
48
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Switching Time
RF Input Impedance
50% of LOSEL to IF settled within 2 degrees
ZRF
LO on and IF terminated into matched
impedance
RF Input Return Loss
LO Input Impedance
ZLO
RF and IF terminated into matched
impedance, LO port selected
LO Input Return Loss
IF Terminal Output Impedance
IF Return Loss
4
ZIF
dBm
dBm
50
1000
ns
50
Ω
20
dB
50
Ω
20
dB
RF and IF terminated into matched
impedance, LO port unselected
20
Nominal differential impedance at the IC’s
IF output
200
Ω
RF terminated in 50Ω; transformed to 50Ω
using external components shown in the
Typical Application Circuit
18
dB
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
(Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm,
PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Power Gain
SYMBOL
CONDITIONS
GC
Conversion Power Gain Variation
vs. Frequency
ΔGC
Flatness over any one of three frequency
bands:
fRF = 824MHz to 849MHz,
fRF = 869MHz to 894MHz,
fRF = 880MHz to 915MHz
Gain Variation Over Temperature
TCG
TC = -40°C to +85°C
Noise Figure
NF
Noise Figure Temperature
Coefficient
TCNF
Input 1dB Compression Point
IP1dB
TC = -40°C to +85°C
MIN
TYP
dB
0.15
dB
-0.012
dB/°C
9.0
dB
0.018
dB/°C
10.6
dBm
24.7
dBm
Third-Order Input Intercept Point
IIP3
-74.9
2x2
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 900MHz
PRF = -10dBm
2LO-2RF Spur Rejection
PRF = -5dBm
-69.9
fRF = 800MHz,
fLO = 1000MHz,
fSPUR = 933.333MHz
PRF = -10dBm
-78
PRF = -5dBm
-73
3x3
UNITS
8.7
fRF1 = 900MHz, fRF2 = 901MHz,
fIF = 200MHz, PRF = -5dBm/tone
3LO-3RF Spur Rejection
MAX
dBc
dBc
Maximum LO Leakage at RF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
-40
dBm
Maximum 2LO Leakage at RF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
-42
dBm
Maximum LO Leakage at IF Port
fLO = 900MHz to 1300MHz, PLO = +3dBm
-34
dBm
Minimum RF-to-IF Isolation
fRF = 824MHz to 915MHz
38
dB
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 900MHz, fLO2 = 901MHz (Note 8)
45
dB
Channel-to-Channel Isolation
RFMAIN (RFDIV) converted power measured
at IFDIV (IFMAIN), relative to IFMAIN (IFDIV),
all unused ports terminated to 50Ω
48
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
50
Ω
21
dB
50
Ω
RF Input Impedance
ZRF
LO on and IF terminated into matched
impedance
RF Input Return Loss
LO Input Impedance
LO Input Return Loss
ZLO
RF and IF terminated into matched
impedance, LO port selected
31
RF and IF terminated into matched
impedance, LO port unselected
24
dB
_______________________________________________________________________________________
5
MAX19985A
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
+3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, RF and LO ports are driven from 50Ω sources. Typical values are at VCC = +3.3V, PRF = -5dBm,
PLO = 0dBm, fRF = 900MHz, fLO = 1100MHz, fIF = 200MHz, TC =+25°C, unless otherwise noted.) (Note 6)
PARAMETER
IF Terminal Output Impedance
IF Output Return Loss
SYMBOL
ZIF
CONDITIONS
MIN
TYP
MAX
UNITS
Nominal differential impedance at the IC’s
IF output
200
Ω
RF terminated in 50Ω; transformed to 50Ω
using external components shown in the
Typical Application Circuit
17
dB
Not production tested. Operation outside this range is possible, but with degraded performance of some parameters. See
the Typical Operating Characteristics. Performance is optimized for RF frequencies of 824MHz to 915MHz.
Note 6: All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit.
Note 7: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects of
all SNR degradations in the mixer including the LO noise, as defined in the Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Note 8: Measured at IF port at IF frequency. LOSEL may be in any logic state.
Note 9: Limited production testing.
Note 10: Guaranteed by production testing.
Note 5:
6
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
TC = +25°C
7
9
8
PLO = -3dBm, 0dBm, +3dBm
1000
700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19985A toc04
25
TC = +25°C
24
TC = -30°C
26
PLO = +3dBm, 0dBm
27
PRF = -5dBm/TONE
PLO = -3dBm
VCC = 5.25V
26
1000
25
VCC = 5.0V
24
VCC = 4.75V
23
23
22
22
22
1000
700
RF FREQUENCY (MHz)
700
1000
NOISE FIGURE (dB)
10
9
8
1000
NOISE FIGURE vs. RF FREQUENCY
10
9
8
PLO = -3dBm, 0dBm, +3dBm
7
TC = +25°C
900
12
MAX19985A toc08
11
800
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
12
MAX19985A toc07
TC = +85°C
11
900
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
12
800
MAX19985A toc09
900
11
NOISE FIGURE (dB)
800
7
900
INPUT IP3 vs. RF FREQUENCY
25
24
800
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
23
700
MAX19985A toc03
700
1000
27
INPUT IP3 (dBm)
INPUT IP3 (dBm)
900
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
26
VCC = 4.75V, 5.0V, 5.25V
RF FREQUENCY (MHz)
27
TC = +85°C
800
INPUT IP3 (dBm)
900
MAX19985A toc05
800
8
6
6
700
9
7
7
6
NOISE FIGURE (dB)
10
CONVERSION GAIN (dB)
8
TC = +85°C
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
9
11
MAX19985A toc02
MAX19985A toc01
TC = -30°C
10
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
MAX19985A toc06
CONVERSION GAIN vs. RF FREQUENCY
11
10
9
8
VCC = 4.75V, 5.0V, 5.25V
7
TC = -30°C
6
6
6
5
5
5
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
1000
RF FREQUENCY (MHz)
_______________________________________________________________________________________
7
MAX19985A
Typical Operating Characteristics
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
TC = -30°C
55
65
PLO = +3dBm
60
55
50
900
1000
RF FREQUENCY (MHz)
900
1000
700
TC = +25°C
75
PRF = -5dBm
TC = -30°C
55
85
800
900
1000
PRF = -5dBm
PLO = -3dBm, 0dBm, +3dBm
800
900
VCC = 4.75V, 5.0V, 5.25V
1000
700
1000
INPUT P1dB vs. RF FREQUENCY
13
12
TC = +25°C
900
15
VCC = 5.25V
14
INPUT P1dB (dBm)
12
800
RF FREQUENCY (MHz)
MAX19985A toc17
14
INPUT P1dB (dBm)
13
MAX19985A toc12
65
INPUT P1dB vs. RF FREQUENCY
15
MAX19985A toc16
TC = +85°C
75
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
14
85
55
700
RF FREQUENCY (MHz)
15
1000
95
55
700
900
3LO-3RF RESPONSE vs. RF FREQUENCY
75
65
800
RF FREQUENCY (MHz)
95
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
65
800
3LO-3RF RESPONSE vs. RF FREQUENCY
MAX19985A toc13
3LO-3RF RESPONSE vs. RF FREQUENCY
TC = +85°C
VCC = 4.75V, 5.0V, 5.25V
60
RF FREQUENCY (MHz)
95
85
65
50
700
3LO-3RF RESPONSE (dBc)
800
70
55
50
700
3LO-3RF RESPONSE (dBc)
MAX19985A toc11
70
75
MAX19985A toc15
TC = +25°C
60
PLO = -3dBm
PRF = -5dBm
MAX19985A toc18
65
75
80
2LO-2RF RESPONSE (dBc)
70
PRF = -5dBm
PLO = 0dBm
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX19985A toc14
2LO-2RF RESPONSE (dBc)
75
80
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
TC = +85°C
2LO-2RF RESPONSE vs. RF FREQUENCY
MAX19985A toc10
2LO-2RF RESPONSE vs. RF FREQUENCY
80
INPUT P1dB (dBm)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
VCC = 5.0V
13
12
PLO = -3dBm, 0dBm, +3dBm
11
11
11
VCC = 4.75V
TC = -30°C
10
800
900
RF FREQUENCY (MHz)
8
10
10
700
1000
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
RF FREQUENCY (MHz)
_______________________________________________________________________________________
1000
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
50
45
40
TC = -30°C, +25°C, +85°C
35
50
45
PLO = -3dBm, 0dBm, +3dBm
40
55
900
1000
50
45
VCC = 4.75V, 5.0V, 5.25V
40
35
30
30
800
700
MAX19985A toc21
60
35
30
800
700
900
800
700
1000
900
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-35
-40
TC = +25°C, +85°C
PLO = +3dBm
-30
-35
PLO = -3dBm
-40
-45
-45
MAX19985A toc24
-25
-20
LO LEAKAGE AT IF PORT (dBm)
-30
MAX19985A toc23
TC = -30°C
-20
LO LEAKAGE AT IF PORT (dBm)
-25
MAX19985A toc22
RF FREQUENCY (MHz)
-20
LO LEAKAGE AT IF PORT (dBm)
MAX19985A toc20
55
CHANNEL ISOLATION (dB)
MAX19985A toc19
CHANNEL ISOLATION (dB)
55
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
60
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION vs. RF FREQUENCY
60
-25
-30
-35
-40
VCC = 4.75V, 5.0V, 5.25V
-45
PLO = 0dBm
-50
-50
1000
1050
1100
1150
950
1000
1050
1100
1150
1200
950
1000
1050
1100
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
TC = +85°C
40
35
TC = -30°C
45
PLO = -3dBm, 0dBm, +3dBm
40
35
50
1200
45
VCC = 4.75V, 5.0V, 5.25V
40
35
TC = +25°C
30
30
30
800
1150
MAX19985A toc27
50
RF-TO-IF ISOLATION (dB)
MAX19985A toc25
45
700
900
LO FREQUENCY (MHz)
50
RF-TO-IF ISOLATION (dB)
-50
900
1200
MAX19985A toc26
950
RF-TO-IF ISOLATION (dB)
900
900
RF FREQUENCY (MHz)
1000
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
1000
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
MAX19985A
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-50
TC = +85°C
-60
PLO = -3dBm, 0dBm, +3dBm
-40
-50
-60
800
900
1000
1100
1200
MAX19985A toc30
-40
-50
-60
700
800
900
1000
1100
700
1200
800
900
1000
1100
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = -30°C, +25°C, +85°C
-40
-50
-60
-30
PLO = -3dBm, 0dBm, +3dBm
-40
-50
-60
800
900
1000
1100
1200
-20
-30
VCC = 4.75V, 5.0V, 5.25V
-40
-50
-60
700
800
900
1000
1100
1200
700
800
900
1000
1100
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
TC = +85°C
TC = +25°C
35
40
PLO = +3dBm
PLO = -3dBm, 0dBm
35
30
30
1000
1100
1200
1300
LO FREQUENCY (MHz)
1400
1500
1200
MAX19985A toc36
45
50
LO SWITCH ISOLATION (dB)
40
MAX19985A toc35
TC = -30°C
45
50
LO SWITCH ISOLATION (dB)
MAX19985A toc34
50
1200
MAX19985A toc33
MAX19985A toc32
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
-30
-10
2LO LEAKAGE AT RF PORT (dBm)
MAX19985A toc31
-20
900
VCC = 4.75V, 5.0V, 5.25V
LO FREQUENCY (MHz)
-10
700
-30
-70
-70
700
2LO LEAKAGE AT RF PORT (dBm)
-30
-20
LO LEAKAGE AT RF PORT (dBm)
-40
MAX19985A toc29
TC = +25°C
LO LEAKAGE AT RF PORT (dBm)
MAX19985A toc28
LO LEAKAGE AT RF PORT (dBm)
TC = -30°C
-30
-20
-70
10
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
LO SWITCH ISOLATION (dB)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
VCC = 4.75V, 5.0V, 5.25V
45
40
35
30
900
1000
1100
1200
1300
LO FREQUENCY (MHz)
1400
1500
900
1000
1100
1200
1300
LO FREQUENCY (MHz)
______________________________________________________________________________________
1400
1500
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
IF PORT RETURN LOSS
vs. IF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
15
20
5
10
15
20
25
25
IF RETURN LOSS DEPENDS ON
EXTERNAL IF COMPONENTS
30
30
750
800
850
900
950
10
PLO = +3dBm
PLO = 0dBm
20
30
PLO = -3dBm
40
50
140
50
1000
230
320
410
500
700
850
1000
1100
1300
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (TC)
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
VCC = 5.25V
350
SUPPLY CURRENT (mA)
10
20
30
PLO = -3dBm, 0dBm, +3dBm
330
310
40
290
50
270
11
VCC = 5.0V
MAX19985A toc42
370
MAX19985A toc40
0
1, 2, 3, 4
10
CONVERSION GAIN (dB)
700
LO UNSELECTED RETURN LOSS (dB)
VCC = 4.75V, 5.0V, 5.25V
0
MAX19985A toc39
LO = 900MHz
LO SELECTED RETURN LOSS (dB)
10
0
MAX19985A toc41
RF PORT RETURN LOSS (dB)
5
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
MAX19985A toc38
IF = 200MHz
IF PORT RETURN LOSS (dB)
0
MAX19985A toc37
RF PORT RETURN LOSS
vs. RF FREQUENCY
9
8
5
7
6
7
VCC = 4.75V
SEE TABLE 1 FOR RESISTOR AND I CC VALUES
850
700
1000
1100
1300
-35
-15
5
25
45
65
900
1000
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
5
24
4
22
6
20
7
18
80
1
2, 3, 4
PRF = -5dBm
75
70
65
60
5
6
7
55
SEE TABLE 1 FOR RESISTOR AND I CC VALUES
SEE TABLE 1 FOR RESISTOR AND I CC VALUES
800
900
RF FREQUENCY (MHz)
1000
1, 2, 3, 4
80
PRF = -5dBm
75
70
65
5
60
55
50
6
7
SEE TABLE 1 FOR RESISTOR AND I CC VALUES
45
50
14
85
3LO-3RF RESPONSE (dBc)
1
2LO-2RF RESPONSE (dBc)
2, 3, 4
MAX19985A toc45
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc44
INPUT IP3 vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
MAX19985A toc43
RF FREQUENCY (MHz)
26
700
800
TEMPERATURE (°C)
1
16
700
85
LO FREQUENCY (MHz)
28
INPUT IP3 (dBm)
6
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
1000
RF FREQUENCY (MHz)
______________________________________________________________________________________
11
MAX19985A
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +5.0V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
CONVERSION GAIN vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
10
CONVERSION GAIN (dB)
14
L = L3 = L6
12
10
8
7
6
5
6
9
L = 0Ω, 7.5nH, 15nH, 30nH
8
27
L = L3 = L6
26
INPUT IP3 (dBm)
1, 2, 3, 4
MAX19985A toc47
11
MAX19985A toc46
16
INPUT IP3 vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc48
INPUT P1dB vs. RF FREQUENCY
(VARIOUS LO AND IF BIAS)
INPUT P1dB (dBm)
L = 30nH
25
L = 0Ω, 7.5nH, 15nH
24
7
23
SEE TABLE 1 FOR RESISTOR AND I CC VALUES
6
800
700
900
22
1000
700
RF FREQUENCY (MHz)
800
900
1000
2LO-2RF RESPONSE (dBc)
75
70
65
L = 15nH
60
L = 0Ω
95
PRF = -5dBm
L = L3 = L6
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
L = L3 = L6
L = 30nH
3LO-3RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
MAX19985A toc49
80
900
RF FREQUENCY (MHz)
2LO-2RF RESPONSE vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
L = 7.5nH
800
700
RF FREQUENCY (MHz)
MAX19985A toc50
4
85
75
65
L = 0Ω, 7.5nH, 15nH, 30nH
55
55
50
700
800
700
1000
900
800
1000
900
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
RF-TO-IF ISOLATION vs. RF FREQUENCY
(VARIOUS VALUES OF L3 AND L6)
L = L3 = L6
-10
L = 7.5nH
-20
-30
-40
L = 15nH
-50
L = 30nH
50
L = 30nH
RF-TO-IF ISOLATION (dB)
L = 0Ω
L = L3 = L6
L = 15nH
40
MAX19985A toc52
RF FREQUENCY (MHz)
MAX19985A toc51
RF FREQUENCY (MHz)
0
LO LEAKAGE AT IF PORT (dBm)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
30
L = 7.5nH
20
L = 0Ω
10
-60
0
-70
900
950
1000
1050
1100
LO FREQUENCY (MHz)
12
1150
1200
700
800
900
RF FREQUENCY (MHz)
______________________________________________________________________________________
1000
1000
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
CONVERSION GAIN
vs. RF FREQUENCY
CONVERSION GAIN
vs. RF FREQUENCY
TC = +25°C
7
9
8
PLO = -3dBm, 0dBm, +3dBm
7
6
900
1000
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
800
900
1000
MAX19985A toc55
700
INPUT IP3 (dBm)
24
TC = +25°C
23
24
PLO = +3dBm
PLO = 0dBm
PLO = -3dBm
23
1000
26
VCC = 3.6V
PRF = -5dBm/TONE
25
INPUT IP3 (dBm)
MAX19985A toc56
25
900
INPUT IP3 vs. RF FREQUENCY
26
PRF = -5dBm/TONE
VCC = 3.3V
800
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
VCC = 3.3V
25
VCC = 3.0V, 3.3V, 3.6V
RF FREQUENCY (MHz)
26
TC = +85°C
8
6
700
MAX19985A toc57
800
9
7
6
700
INPUT IP3 (dBm)
10
24
MAX19985A toc58
8
11
CONVERSION GAIN (dB)
9
TC = +85°C
10
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
10
VCC = 3.3V
MAX19985A toc54
VCC = 3.3V
TC = -30°C
11
MAX19985A toc53
11
CONVERSION GAIN
vs. RF FREQUENCY
VCC = 3.3V
VCC = 3.0V
23
TC = -30°C
22
21
21
21
700
800
900
1000
700
900
800
900
RF FREQUENCY (MHz)
NOISE FIGURE
vs. RF FREQUENCY
NOISE FIGURE
vs. RF FREQUENCY
NOISE FIGURE
vs. RF FREQUENCY
11
9
8
7
10
9
8
7
TC = +25°C
TC = -30°C
900
RF FREQUENCY (MHz)
1000
10
9
8
VCC = 3.0V, 3.3V, 3.6V
6
5
800
11
7
PLO = -3dBm, 0dBm, +3dBm
6
5
12
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10
VCC = 3.3V
1000
MAX19985A toc61
12
MAX19985A toc60
VCC = 3.3V
MAX19985A toc59
11
700
700
1000
RF FREQUENCY (MHz)
TC = +85°C
6
800
RF FREQUENCY (MHz)
12
NOISE FIGURE (dB)
22
22
5
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
1000
RF FREQUENCY (MHz)
______________________________________________________________________________________
13
MAX19985A
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
2LO-2RF RESPONSE
vs. RF FREQUENCY
70
65
TC = -30°C
TC = +25°C
60
55
65
60
900
1000
VCC = 3.0V, 3.3V, 3.6V
60
50
800
700
900
1000
800
700
900
1000
3LO-3RF RESPONSE
vs. RF FREQUENCY
3LO-3RF RESPONSE
vs. RF FREQUENCY
3LO-3RF RESPONSE
vs. RF FREQUENCY
TC = +25°C
75
65
85
75
65
PLO = -3dBm, 0dBm, +3dBm
TC = -30°C
55
95
PRF = -5dBm
55
800
900
1000
800
RF FREQUENCY (MHz)
65
VCC = 3.0V
1000
700
VCC = 3.3V
12
11
10
TC = +25°C
TC = -30°C
800
900
1000
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
INPUT P1dB vs. RF FREQUENCY
INPUT P1dB (dBm)
TC = +85°C
900
13
MAX19985A toc68
VCC = 3.3V
12
75
RF FREQUENCY (MHz)
INPUT P1dB vs. RF FREQUENCY
13
VCC = 3.3V
VCC = 3.6V
55
700
13
11
10
PLO = -3dBm, 0dBm, +3dBm
9
VCC = 3.6V
12
INPUT P1dB (dBm)
700
85
MAX19985A toc70
TC = +85°C
PRF = -5dBm
VCC = 3.3V
3LO-3RF RESPONSE (dBc)
85
95
3LO-3RF RESPONSE (dBc)
PRF = -5dBm
MAX19985A toc66
RF FREQUENCY (MHz)
MAX19985A toc65
RF FREQUENCY (MHz)
VCC = 3.3V
VCC = 3.3V
11
10
9
VCC = 3.0V
8
8
8
7
7
7
700
65
RF FREQUENCY (MHz)
95
9
70
55
50
800
700
800
900
RF FREQUENCY (MHz)
14
PLO = 0dBm
PLO = +3dBm
55
50
3LO-3RF RESPONSE (dBc)
70
PRF = -5dBm
75
MAX19985A toc64
75
80
MAX19985A toc67
TC = +85°C
PRF = -5dBm
VCC = 3.3V
PLO = -3dBm
MAX19985A toc69
2LO-2RF RESPONSE (dBc)
75
80
2LO-2RF RESPONSE (dBc)
PRF = -5dBm
2LO-2RF RESPONSE
vs. RF FREQUENCY
MAX19985A toc63
VCC = 3.3V
2LO-2RF RESPONSE (dBc)
80
MAX19985A toc62
2LO-2RF RESPONSE
vs. RF FREQUENCY
INPUT P1dB (dBm)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
1000
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
RF FREQUENCY (MHz)
______________________________________________________________________________________
1000
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
CHANNEL ISOLATION
vs. RF FREQUENCY
50
45
TC = -30°C, +25°C, +85°C
40
55
35
PLO = -3dBm, 0dBm, +3dBm
40
900
1000
45
VCC = 3.0V, 3.3V, 3.6V
40
30
800
700
900
1000
700
800
900
1000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-30
-35
-40
TC = +85°C
TC = +25°C
-45
-25
PLO = +3dBm
-30
-35
PLO = -3dBm
-40
PLO = 0dBm
-45
-50
-20
1050
1100
1150
1200
-25
VCC = 3.6V
-30
VCC = 3.3V
-35
VCC = 3.0V
-40
-45
-50
1000
950
MAX19985A toc76
TC = -30°C
VCC = 3.3V
LO LEAKAGE AT IF PORT (dBm)
-25
-20
MAX19985A toc75
VCC = 3.3V
LO LEAKAGE AT IF PORT (dBm)
MAX19985A toc74
-20
-50
900
1000
950
1050
1100
1150
1200
900
950
1000
1050
1100
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
45
TC = +85°C
40
35
TC = -30°C
50
VCC = 3.3V
45
PLO = -3dBm, 0dBm, +3dBm
40
35
1150
50
1200
MAX19985A toc79
VCC = 3.3V
RF-TO-IF ISOLATION (dB)
MAX19985A toc77
50
RF-TO-IF ISOLATION (dB)
900
50
35
30
800
700
LO LEAKAGE AT IF PORT (dBm)
45
55
35
30
RF-TO-IF ISOLATION (dB)
50
60
MAX19985A toc73
VCC = 3.3V
MAX19985A toc78
CHANNEL ISOLATION (dB)
55
60
MAX19985A toc72
VCC = 3.3V
CHANNEL ISOLATION (dB)
MAX19985A toc71
60
CHANNEL ISOLATION
vs. RF FREQUENCY
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION
vs. RF FREQUENCY
45
VCC = 3.0V, 3.3V, 3.6V
40
35
TC = +25°C
30
30
700
800
900
RF FREQUENCY (MHz)
1000
30
700
800
900
RF FREQUENCY (MHz)
1000
700
800
900
1000
RF FREQUENCY (MHz)
______________________________________________________________________________________
15
MAX19985A
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = -30°C
TC = +25°C
-40
-50
VCC = 3.3V
-30
-40
-50
TC = +85°C
-60
800
900
1000
1100
1200
VCC = 3.6V
-40
VCC = 3.3V
-50
VCC = 3.0V
-60
700
800
900
1000
1100
1200
700
800
900
1000
1100
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-30
-40
-50
TC = -30°C, +25°C, +85°C
VCC = 3.3V
-20
-30
-40
-50
PLO = -3dBm, 0dBm, +3dBm
-10
1200
MAX19985A toc85
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
MAX19985A toc84
MAX19985A toc83
-10
2LO LEAKAGE AT RF PORT (dBm)
700
-30
PLO = -3dBm, 0dBm, +3dBm
-60
2LO LEAKAGE AT RF PORT (dBm)
-20
MAX19985A toc82
-30
-20
MAX19985A toc81
LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
LO LEAKAGE AT RF PORT (dBm)
MAX19985A toc80
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT (dBm)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-30
VCC = 3.6V
-40
VCC = 3.3V
-50
VCC = 3.0V
-60
-60
800
900
1000
1100
1200
800
900
1000
1100
1200
800
900
1000
1100
LO SWITCH ISOLATION
vs. RF FREQUENCY
LO SWITCH ISOLATION
vs. RF FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
TC = +85°C
TC = +25°C
30
45
40
PLO = +3dBm
35
PLO = -3dBm, 0dBm
30
1000
1100
1200
1300
LO FREQUENCY (MHz)
1400
1500
50
VCC = 3.0V, 3.3V, 3.6V
45
1200
MAX19985A toc88
MAX19985A toc87
VCC = 3.3V
LO SWITCH ISOLATION (dB)
40
50
LO SWITCH ISOLATION (dB)
TC = -30°C
45
900
700
LO FREQUENCY (MHz)
VCC = 3.3V
16
700
LO FREQUENCY (MHz)
50
35
-60
LO FREQUENCY (MHz)
MAX19985A toc86
700
LO SWITCH ISOLATION (dB)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
40
35
30
900
1000
1100
1200
1300
LO FREQUENCY (MHz)
1400
1500
900
1000
1100
1200
1300
LO FREQUENCY (MHz)
______________________________________________________________________________________
1400
1500
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
PLO = -3dBm, 0dBm, +3dBm
15
20
25
10
15
20
VCC = 3.0V, 3.3V, 3.6V
25
30
VCC = 3.3V
10
750
800
850
900
950
1000
30
PLO = -3dBm
40
PLO = 0dBm
IF RETURN LOSS DEPENDS ON
EXTERNAL COMPONENTS
50
140
50
RF FREQUENCY (MHz)
230
320
410
700
500
850
VCC = 3.3V
340
VCC = 3.6V
320
SUPPLY CURRENT (mA)
10
1150
1300
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19985A toc92
0
1000
LO FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO UNSELECTED RETURN LOSS
vs. LO FREQUENCY
LO UNSELECTED RETURN LOSS (dB)
PLO = +3dBm
20
30
700
MAX19985A toc91
5
0
MAX19985A toc93
10
LO = 900MHz
LO SELECTED RETURN LOSS (dB)
RF PORT RETURN LOSS (dB)
5
0
IF PORT RETURN LOSS (dB)
IF = 200MHz
MAX19985A toc89
0
VCC = 3.3V
LO SELECTED RETURN LOSS
vs. LO FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19985A toc90
RF PORT RETURN LOSS
vs. RF FREQUENCY
PLO = -3dBm, 0dBm, +3dBm
20
30
300
280
260
VCC = 3.3V
240
VCC = 3.0V
40
220
50
200
700
850
1000
1150
1300
-35
LO FREQUENCY (MHz)
-15
5
25
45
65
85
TEMPERATURE (°C)
Table 1. DC Current vs. Bias Resistor
Settings
BIAS
CONDITION
DC CURRENT
(mA)
R1 AND R4
VALUES (Ω)
R2 AND R5
VALUES (Ω)
1
359.4
698
800
2
331.8
698
1100
3
322.8
698
1200
4
311.7
698
1400
5
268.2
1100
1200
6
244.4
1400
1200
7
223.7
1820
1200
Note: See TOCs 42–46 for performance trade-offs vs. DC bias
condition.
______________________________________________________________________________________
17
MAX19985A
Typical Operating Characteristics (continued)
(Typical Application Circuit, VCC = +3.3V, PLO = 0dBm, PRF = -5dBm, LO is high-side injected for a 200MHz IF, TC =+25°C, unless
otherwise noted.)
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
Pin Description
PIN
NAME
1
RFMAIN
2
TAPMAIN
3, 5, 7, 12, 20, 22,
24, 25, 26, 34
GND
Ground
4, 6, 10, 16, 21,
30, 36
VCC
Power Supply. Bypass to GND with 0.01µF capacitors as close as possible to the pin. Pins
4 and 6 do not require bypass capacitors.
8
TAPDIV
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as
close as possible to the pin with the smaller value capacitor closer to the part.
9
RFDIV
11
IFDBIAS
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the diversity IF amplifier (see the Typical Operating Characteristics for typical
performance vs. resistor value).
13, 14
IFD+, IFD-
Diversity Mixer Differential IF Outputs. Connect pullup inductors from each of these pins to
VCC (see the Typical Application Circuit).
15
LEXTD
Diversity External Inductor Connection. Connect a parallel combination of an inductor and
a 500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (see
the Typical Operating Characteristics for typical performance vs. inductor value).
17
LODBIAS
18, 28
N.C.
No Connection. Not internally connected.
19
LO1
Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DCblocking capacitor.
23
LOSEL
18
FUNCTION
Main Channel RF input. Internally matched to 50Ω. Requires an input DC-blocking
capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as
close as possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking
capacitor.
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the
bias current for the diversity LO amplifier (see the Typical Operating Characteristics for
typical performance vs. resistor value).
Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DCblocking capacitor.
27
LO2
29
LOMBIAS
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the main LO amplifier (see the Typical Operating Characteristics for typical
performance vs. resistor value).
31
LEXTM
Main External Inductor Connection. Connect a parallel combination of an inductor and a
500Ω resistor from this pin to ground to increase the RF-to-IF and LO-to-IF isolation (see
Typical Operating Characteristics for typical performance vs. inductor value).
32, 33
IFM-, IFM+
35
IFMBIAS
—
EP
Main Mixer Differential IF Outputs. Connect pullup inductors from each of these pins to VCC
(see the Typical Application Circuit).
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias
current for the main IF amplifier (see the Typical Operating Characteristics for typical
performance vs. resistor value).
Exposed Pad. Internally connected to GND. Connect to a large ground plane using
multiple vias to maximize thermal and RF performance.
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
The MAX19985A is a dual-channel downconverter
designed to provide 8.7dB of conversion gain,
+25.5dBm of IIP3, +12.6dBm typical input 1dB compression point, and a 9.0dB noise figure.
In addition to its high-linearity performance, the
MAX19985A achieves a high level of component integration. The device integrates two double-balanced
mixers for two-channel downconversion. Both the main
and diversity channels include a balun and matching
circuitry to allow 50Ω single-ended interfaces to the RF
ports and the two LO ports. An integrated single-pole/
double-throw (SPDT) switch provides 50ns switching
time between the two LO inputs with 46dB of LO-to-LO
isolation and -40dBm of LO leakage at the RF port.
Furthermore, the integrated LO buffers provide a high
drive level to each mixer core, reducing the LO drive
required at the MAX19985A’s inputs to a range of
-3dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion, which is
ideal for providing enhanced 2LO-2RF performance.
Specifications are guaranteed over broad frequency
ranges to allow for use in WCDMA, GSM/EDGE, iDEN,
cdma2000, and LTE/WiMAX cellular and 700MHz band
base stations. The MAX19985A is specified to operate
over an RF input range of 700MHz to 1000MHz, an LO
range of 900MHz to 1300MHz, and an IF range of
50MHz to 500MHz. The external IF components set the
lower frequency range (see the Typical Operating
Characteristics for details). Operation beyond these
ranges is possible (see the Typical Operating
Characteristics for additional information). Although this
device is optimized for high-side LO injection applications, it can operate in low-side LO injection modes as
well. However, performance degrades as fLO continues
to decrease. For increased low-side LO performance,
refer to the MAX19985 data sheet.
RF Port and Balun
The RF input ports of both the main and diversity channels are internally matched to 50Ω, requiring no external matching components. A DC-blocking capacitor is
required as the input is internally DC shorted to ground
through the on-chip balun. The RF port input return loss
is typically 20dB over the RF frequency range of
770MHz to 915MHz.
LO Inputs, Buffer, and Balun
The MAX19985A is optimized for a 900MHz to
1300MHz LO frequency range. As an added feature,
the MAX19985A includes an internal LO SPDT switch
for use in frequency-hopping applications. The switch
selects one of the two single-ended LO ports, allowing
the external oscillator to settle on a particular frequency
before it is switched in. LO switching time is typically
50ns, which is more than adequate for typical GSM
applications. If frequency hopping is not employed,
simply set the switch to either of the LO inputs. The
switch is controlled by a digital input (LOSEL), where
logic-high selects LO1 and logic-low selects LO2. LO1
and LO2 inputs are internally matched to 50Ω, requiring
only an 82pF DC-blocking capacitor. To avoid damage
to the part, voltage MUST be applied to VCC before
digital logic is applied to LOSEL. Alternatively, a 1kΩ
resistor can be placed in series at the LOSEL to limit
the input current in applications where LOSEL is
applied before VCC.
The main and diversity channels incorporate a twostage LO buffer that allows for a wide-input power
range for the LO drive. The on-chip low-loss baluns,
along with LO buffers, drive the double-balanced mixers. All interfacing and matching components from the
LO inputs to the IF outputs are integrated on-chip.
High-Linearity Mixer
The core of the MAX19985A dual-channel downconverter consists of two double-balanced, highperformance passive mixers. Exceptional linearity is
provided by the large LO swing from the on-chip LO
buffers. When combined with the integrated IF amplifiers, the cascaded IIP3, 2LO-2RF rejection, and noise
figure performance are typically +25.5dBm, 76dBc,
and 9.0dB, respectively.
Differential IF
The MAX19985A has an IF frequency range of 50MHz
to 500MHz, where the low-end frequency depends on
the frequency response of the external IF components.
Note that these differential ports are ideal for providing
enhanced IIP2 performance. Single-ended IF applications require a 4:1 (impedance ratio) balun to transform
the 200Ω differential IF impedance to a 50Ω singleended system. After the balun, the return loss is
typically 18dB. The user can use a differential IF amplifier on the mixer IF ports, but a DC block is required on
both IFD+/IFD- and IFM+/IFM- ports to keep external
DC from entering the IF ports of the mixer.
______________________________________________________________________________________
19
MAX19985A
Detailed Description
MAX19985A
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω. No
matching components are required. The RF port input
return loss is typically 20dB over the RF frequency range
of 770MHz to 915MHz and return loss at the LO ports are
typically 20dB over the entire LO range. RF and LO inputs
require only DC-blocking capacitors for interfacing.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance to a 50Ω single-ended
output (see the Typical Application Circuit).
Externally Adjustable Bias
Each channel of the MAX19985A has two pins (LO_BIAS,
IF_BIAS) that allow external resistors to set the internal
bias currents. Nominal values for these resistors are given
in Table 2. Larger-value resistors can be used to reduce
power dissipation at the expense of some performance
loss. See the Typical Operating Characteristics to evaluate
the power vs. performance tradeoff. If ±1% resistors are
not readily available, ±5% resistors can be substituted.
LEXT_ Inductors
For applications requiring optimum RF-to-IF and LO-toIF isolation, connect a parallel combination of a lowESR inductor and a 500Ω resistor from LEXT_ (pins 15
and 31) to ground. When improved isolation is not
required, connect LEXT_ to ground using a 0Ω resistance. See the Typical Operating Characteristics to
evaluate the isolation vs. inductor value tradeoff.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be so
that any capacitance from both IF- and IF+ to ground
does not exceed several picofarads. For the best performance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed
pad MUST be connected to the ground plane of the
PCB. It is suggested that multiple vias be used to connect this pad to the lower-level ground planes. This
method provides a good RF/thermal-conduction path for
the device. Solder the exposed pad on the bottom of the
Table 2. Component Values
COMPONENT
VALUE
DESCRIPTION
C1, C2, C7, C8
39pF
C3, C6
0.033µF
C4, C5
—
C9, C13, C15, C17, C18
0.01µF
Microwave capacitors (0402)
C10, C11, C12, C19, C20, C21
150pF
Microwave capacitors (0603)
Microwave capacitors (0603)
Not used
C14, C16
82pF
L1, L2, L4, L5
330nH
Wire-wound high-Q inductors (0805)
L3, L6
30nH
Wire-wound high-Q inductors (0603). Smaller values can be used at the expense of
some performance loss (see the Typical Operating Characteristics).
R1, R4
698Ω
R2, R5
1.2kΩ
600Ω
20
Microwave capacitors (0402)
Microwave capacitors (0402)
±1% resistors (0402). Larger values can be used to reduce power at the expense of
some performance loss (see the Typical Operating Characteristics).
±1% resistors (0402). Use for VCC = +5.0V applications. Larger values can be used
to reduce power at the expense of some performance loss (see the Typical
Operating Characteristics).
±1% resistors (0402). Use for VCC = +3.3V applications.
R3, R6
0Ω
±1% resistors (1206)
R7, R8
500Ω
±1% resistors (0402)
T1, T2
4:1
Transformers (200:50)
Mini-Circuits TC4-1W-7A
U1
—
MAX19985A IC
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit (see Table 2 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19985A’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
MAX19985A is mounted be designed to conduct heat
from the EP. In addition, provide the EP with a lowinductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly
or through an array of plated via holes.
______________________________________________________________________________________
21
MAX19985A
device package to the PCB. The MAX19985A evaluation
kit can be used as a reference for board layout. Gerber
files are available upon request at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
MAX19985A
Typical Application Circuit
C19
VCC
IF MAIN
OUTPUT
T1
L1
C21
R3
L2
4:1
C20
VCC
VCC
R7
L3
C17
C1 TAPMAIN
C3
C2
GND
VCC
VCC
C4
GND
VCC
VCC
C5
C6
GND
C7
TAPDIV
RFDIV
RF DIV
INPUT
36
35
34
33
32
LOMBIAS
VCC
LEXTM
IFM-
IFM+
GND
IFMBIAS
VCC
+
RFMAIN
RF MAIN
INPUT
31
30
29
R2
N.C.
R1
C18
28
27
1
U1
26
2
MAX19985A
3
25
4
24
5
23
6
22
7
21
EXPOSED
PAD
8
20
19
9
C8
LO2
GND
LO2
C16
GND
GND
LOSEL
LO
SELECT
GND
VCC
VCC
C15
GND
LO1
LO1
C14
17
VCC
VCC
R4
L6
R8
18
N.C.
16
LODBIAS
15
LEXTD
14
IFD-
13
IFD+
12
GND
11
IFDBIAS
VCC
10
R5
VCC
C13
C9
C11
VCC
T2
L5
C12
R6
L4
4:1
C10
22
IF DIV
OUTPUT
______________________________________________________________________________________
Dual, SiGe, High-Linearity, 700MHz to 1000MHz
Downconversion Mixer with LO Buffer/Switch
RFMAIN
1
TAPMAIN
2
IFMBIAS
GND
IFM+
IFM-
LEXTM
VCC
LOMBIAS
N.C.
+
VCC
TOP VIEW (WITH
EXPOSED PAD ON
THE BOTTOM OF THE
PACKAGE)
36
35
34
33
32
31
30
29
28
27
LO2
26
GND
MAX19985A
GND
3
25
GND
VCC
4
24
GND
GND
5
23
LOSEL
VCC
6
22
GND
GND
7
21
VCC
20
GND
19
LO1
13
14
15
16
17
18
VCC
LODBIAS
N.C.
12
LEXTD
11
IFD-
10
IFD+
9
GND
RFDIV
IFDBIAS
8
VCC
TAPDIV
EXPOSED
PAD
THIN QFN-EP
6mm x 6mm
Package Information
Chip Information
PROCESS: SiGe BiCMOS
For the latest package outline information and land patterns, go
to www.maxim-ic.com/packages.
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
36 Thin QFN-EP
T3666+2
21-0141
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 23
© 2008 Maxim Integrated Products
is a registered trademark of Maxim Integrated Products, Inc.
MAX19985A
Pin Configuration/Functional Diagram