Order this document by MTD3302/D SEMICONDUCTOR TECHNICAL DATA " Power Surface Mount Products ! ! SINGLE TMOS POWER MOSFET 30 VOLTS RDS(on) = 10 mW WaveFET devices are an advanced series of power MOSFETs which utilize Motorola’s latest MOSFET technology process to achieve the lowest possible on–resistance per silicon area. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. WaveFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients. • Characterized Over a Wide Range of Power Ratings • Ultralow RDS(on) Provides Higher Efficiency and Extends Battery Life in Portable Applications • Logic Level Gate Drive — Can Be Driven by Logic ICs • Diode Is Characterized for Use In Bridge Circuits • Diode Exhibits High Speed, With Soft Recovery • IDSS Specified at Elevated Temperature • Avalanche Energy Specified • Industry Standard DPAK Surface Mount Package CASE 369A– 13, Style 2 DPAK D G S MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Parameter Symbol Value Unit VDSS VDGR 30 Vdc 30 Vdc ± 20 Vdc Drain–to–Source Voltage Drain–to–Gate Voltage Gate–to–Source Voltage VGS TJ, Tstg EAS Operating and Storage Temperature Range Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 126 mH, IL(pk) = 3.0 A, VDS = 30 Vdc) DEVICE MARKING D3302 – 55 to 150 °C mJ 500 ORDERING INFORMATION Device MTD3302T4 Reel Size Tape Width Quantity 13″ 12 mm embossed tape 2500 This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice. HDTMOS and WaveFET are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc. TMOS Motorola Motorola, Inc. 1997 Power MOSFET Transistor Device Data 1 MTD3302 POWER RATINGS (TJ = 25°C unless otherwise specified) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 ms) Mounted on heat sink Tcase = 25°C Total Power Dissipation @ TA = 25°C Linear Derating Factor VGS = 10 Vdc Thermal Resistance — Junction–to–Case Steady State Continuous Source Current (Diode Conduction) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 ms) Mounted on 1 inch square FR–4 or G10 board Total Power Dissipation @ TA = 25°C Linear Derating Factor VGS = 10 Vdc Thermal Resistance — Junction–to–Ambient Steady State Continuous Source Current (Diode Conduction) Parameter Drain Current — Continuous @ TA = 25°C Drain Current — Continuous @ TA = 100°C Drain Current — Single Pulse (tp ≤ 10 ms) Total Power Dissipation @ TA = 25°C Linear Derating Factor Thermal Resistance — Junction–to–Ambient Continuous Source Current (Diode Conduction) 2 Mounted on minimum recommended FR–4 or G10 board VGS = 10 Vdc Steady State Symbol Value Unit ID ID IDM PD 30 30 70 Adc Adc Adc 96 769 Watts mW/°C RθJC 1.3 °C/W IS 2.0 Adc Symbol Value Unit ID ID IDM PD 10.8 6.6 70 Adc Adc Adc 1.8 14 Watts mW/°C RθJA 71.4 °C/W IS 2.0 Adc Symbol Value Unit ID ID IDM PD 8.3 5.2 60 Adc Adc Adc 1.0 8.3 Watts mW/°C RθJA 120 °C/W IS 2.0 Adc Motorola TMOS Power MOSFET Transistor Device Data MTD3302 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Characteristic Symbol Min Typ Max Unit 30 — 33 23 — — — — 0.02 0.5 1.0 10 — — ± 100 1.0 — 1.9 4.7 — — — — 8.9 13 10 16 gFS 5 13 — Mhos Ciss — 1810 — pF Coss — 165 — Crss — 595 — td(on) — 9 — tr — 10 — td(off) — 60 — tf — 43 — td(on) — 18 — tr — 32 — td(off) — 42 — tf — 44 — QT — 46 60 Q1 — 5.3 — Q2 — 10.7 — Q3 — 10.3 — — — 0.75 0.58 1.1 — trr — 36 — ta — 21 — tb — 15 — QRR — 0.041 — OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C µAdc nAdc ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 10 Adc) (VGS = 4.5 Vdc, ID = 5.0 Adc) RDS(on) Forward Transconductance (VDS = 15 Vdc, ID = 10 Adc) Vdc mV/°C mΩ DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = 24 Vdc, Vdc VGS = 0 Vdc, Vdc f = 1.0 MHz) Transfer Capacitance SWITCHING CHARACTERISTICS(2) Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 25 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 10 Vdc Vdc, RG = 6.0 Ω)) Fall Time Turn–On Delay Time Rise Time Turn–Off Delay Time (VDD = 25 Vdc, Vd ID = 1.0 1 0 Adc, Ad VGS = 4.5 4 5 Vdc, Vdc RG = 6.0 Ω)) Fall Time Gate Charge ((VDS = 15 Vdc, Vd , ID = 2.0 2 0 Adc, Ad , VGS = 10 Vdc) SOURCE–DRAIN DIODE CHARACTERISTICS Forward On–Voltage (1) (IS = 2.3 Adc, VGS = 0 Vdc) (IS = 2.3 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time ((IS = 2 2.3 3 Adc, Ad , VGS = 0 Vdc, Vd , dIS/dt = 100 A/µs) Reverse Recovery Stored Charge VSD ns ns nC Vdc ns µC (1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%. (2) Switching characteristics are independent of operating junction temperatures. Motorola TMOS Power MOSFET Transistor Device Data 3 MTD3302 PACKAGE DIMENSIONS –T– C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 3 U K F J L H D G 2 PL 0.13 (0.005) M DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 ––– 0.030 0.050 0.138 ––– MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 ––– 0.77 1.27 3.51 ––– T CASE 369A–13 ISSUE Y STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 141, 4–32–1 Nishi–Gotanda, Shagawa–ku, Tokyo, Japan. 03–5487–8488 Customer Focus Center: 1–800–521–6274 Mfax: [email protected] – TOUCHTONE 1–602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 – http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ 4 ◊ MTD3302/D Motorola TMOS Power MOSFET Transistor Device Data