Order this document by MRF10120/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 960 – 1215 MHz long pulse common base amplifier applications such as JTIDS and Mode S transmitters. • Guaranteed Performance @ 1.215 GHz, 36 Vdc Output Power = 120 Watts Peak Gain = 8.0 dB Min., 9.2 dB (Typ) 120 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTOR NPN SILICON • 100% Tested for Load Mismatch at All Phase Angles with 3:1 VSWR • Hermetically Sealed Industry Standard Package • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Internal Input and Output Matching for Broadband Operation • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 355C–02, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 55 Vdc Collector–Base Voltage VCBO 55 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Peak (1) IC 15 Adc Total Device Dissipation @ TC = 25°C (1), (2) Derate above 25°C PD 380 2.17 Watts W/°C Storage Temperature Range Tstg – 65 to + 200 °C TJ 200 Symbol Max Unit RθJC 0.46 °C/W Junction Temperature THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 60 mAdc, VBE = 0) V(BR)CES 55 — — Vdc Collector–Base Breakdown Voltage (IC = 60 mAdc, IE = 0) V(BR)CBO 55 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc ICBO — — 25 mAdc Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 36 Vdc, IE = 0) NOTES: (continued) 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF10120 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 — — — ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) FUNCTIONAL TESTS (7.0 µs Pulses @ 54% duty cycle for 3.4 ms; then off for 4.5 ms; overall duty cycle = 23%) Common–Base Amplifier Power Gain (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) GPB 8.0 9.2 — dB Collector Efficiency (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz) η 50 55 — % Load Mismatch (VCC = 36 Vdc, Pout = 120 W Peak, f = 1215 MHz, VSWR = 3:1 All Phase Angles) ψ No Degradation in Output Power + 36 Vdc – + C2 Z5 C3 C4 L1 D.U.T. RF INPUT Z2 Z1 Z3 Z4 Z6 Z7 Z8 RF OUTPUT Z9 C1 C1 — 270 pF 100 Mil Chip Capacitor C2 — 220 pF 100 Mil Chip Capacitor C3 — 0.1 µF C4 — 47 µF 50 V Electrolytic L1 — 3 Turns #18 AWG, 1/8″ ID, 0.18 Long Z1 – Z9 — Microstrip, See Details Board Material — Teflon/Glass Laminate, Dielectric Thickness = 0.030″, εr = 2.55, 2 Oz. Copper 0.2 0.15 0.15 0.4 ALL DIMENSIONS IN INCHES 1.1 0.081 0.081 0.6 0.3 1.00 1.06 0.52 0.8 0.05 0.13 0.22 0.91 0.6 0.66 0.55 0.44 0.74 0.3 Figure 1. Test Circuit MRF10120 2 MOTOROLA RF DEVICE DATA 200 Pout , OUTPUT POWER (WATTS pk) Pout , OUTPUT POWER (WATTS pk) 200 150 150 100 100 f = 960 MHz VCC = 36 V 50 0 f = 1215 MHz VCC = 36 V 50 0 5 0 10 15 20 25 0 5 10 15 20 25 Pin, INPUT POWER (WATTS pk) Pin, INPUT POWER (WATTS pk) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Input Power f = 960 MHz 1025 1215 1090 1150 VCC = 36 V, Pout = 120 W 1150 1215 f = 960 MHz 1090 1025 VCC = 36 V, Pout = 120 W f (MHz) Zin (OHMS) f (MHz) ZOL* (OHMS) 960 1025 1090 1150 1215 1.45 + j2.57 2.22 + j2.91 2.77 + j2.80 2.90 + j2.22 2.71 + j1.07 960 1025 1090 1150 1215 5.33 + j1.37 4.59 – j0.307 3.74 – j0.612 2.43 – j0.492 1.80 – j0.385 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 4. Series Equivalent Input Impedances MOTOROLA RF DEVICE DATA Figure 5. Series Equivalent Output Impedance MRF10120 3 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –A– M U Q 2 PL 0.76 (0.030) M T A 1 R –B– 3 K 2 PL 2 D J N E B M DIM A B C D E H J K M N Q R U INCHES MIN MAX 0.890 0.910 0.375 0.395 0.150 0.165 0.145 0.155 0.055 0.065 0.120 0.130 0.003 0.006 0.185 0.215 45_REF 0.490 0.510 0.115 0.125 0.395 0.405 0.700 BSC MILLIMETERS MIN MAX 22.61 23.11 9.53 10.03 3.81 4.19 3.69 3.93 1.40 1.65 3.05 3.30 0.08 0.15 4.70 5.46 45_REF 12.45 12.95 2.93 3.17 10.04 10.28 17.78 BSC STYLE 1: PIN 1. COLLECTOR 2. EMITTER 3. BASE C H M –T– SEATING PLANE CASE 355C–02 ISSUE C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF10120 4 ◊ *MRF10120/D* MRF10120/D MOTOROLA RF DEVICE DATA