Order this document by MRF317/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed primarily for wideband large–signal output amplifier stages in 30 – 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 100 W Minimum Gain = 9.0 dB 100 W, 30 – 200 MHz CONTROLLED Q BROADBAND RF POWER TRANSISTOR NPN SILICON • Built–In Matching Network for Broadband Operation • 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR • Gold Metallization System for High Reliability • High Output Saturation Power — Ideally Suited for 30 W Carrier/120 W Peak AM Amplifier Service • Guaranteed Performance in Broadband Test Fixture MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 35 Vdc Collector–Base Voltage VCBO 65 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous Collector Current — Peak (10 seconds) IC 12 18 Adc Total Device Dissipation @ TC = 25°C (1) Derate above 25°C PD 270 1.54 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C CASE 316–01, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol Max Unit RθJC 0.65 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 100 mAdc, IB = 0) V(BR)CEO 35 — — Vdc Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES 65 — — Vdc Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 65 — — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 — — Vdc ICBO — — 5.0 mAdc hFE 10 25 80 — OFF CHARACTERISTICS Collector Cutoff Current (VCB = 30 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc) NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF317 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Cob — 150 175 pF Common–Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) GPE 9.0 10 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 100 W, f = 150 MHz, IC (Max) = 6.5 Adc) η 55 60 — % Load Mismatch (VCC = 28 Vdc, Pout = 100 W CW, f = 150 MHz, VSWR = 30:1 all phase angles) ψ DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Figure 2) MRF317 2 No Degradation in Output Power MOTOROLA RF DEVICE DATA R2 R3 RFC3 RFC5 C5 R1 RFC6 C13 RFC2 DC + 28 Vdc C11 C12 RFC4 RFC1 C1 RF INPUT L3 DUT L1 C10 L4 RF OUTPUT L2 C2 C3 C1, C9 — 39 pF, 100 mil ATC C2 — 120 pF, 100 mil ATC C3, C4 — 360 pF, 100 mil ATC C5 — 1000 pF Dipped Mica C6, C7 — 100 pF, 100 mil ATC* C8 — 18 pF, 100 mil ATC* C10 — 43 pF, 100 mil ATC C6 C4 C11 — 60 pF, Underwood C12 — 0.1 µF Erie Redcap C13 — 1000 pF, Underwood J102 L1 — 50 nH L2 — 6.0 nH L3 — 8.0 nH L4 — 32 nH C7 C8 C9 RFC1 — 0.15 µH Molded Coil RFC2, RFC3 — Ferroxcube Bead 56–590–65/3B RFC4 — 1 Turn, #18 Wire, 2.0″ L RFC5 — Ferroxcube VK200 19/4B RFC6 — 7 Turns, #18 Wire, 0.3″ ID R1 — 10 Ω 1/2 W R2, R3 — 10 Ω 1.0 W *Combination of C6, C7, C8 equals 220 pF. Figure 1. 110 – 160 MHz Broadband Amplifier — Test Fixture Schematic 70 60 9 EFFICIENCY, η (%) G PE , POWER GAIN (dB) 10 8 7 Pout = 100 W VCC = 28 V 50 40 Pout = 100 W VCC = 28 V 30 6 110 135 20 110 160 160 f, FREQUENCY (MHz) Figure 2. Power Gain versus Frequency Broadband Test Fixture Figure 3. Efficiency versus Frequency Broadband Test Fixture 140 6 f = 30 MHz VCC = 28 V Pout , OUTPUT POWER (WATTS) Pout = 100 W VCC = 28 V 5 INPUT VSWR 135 f, FREQUENCY (MHz) 4 3 2 50 MHz 120 100 80 60 200 MHz 150 MHz 40 100 MHz 1 110 135 160 20 0.2 0.5 1 2 5 10 20 f, FREQUENCY (MHz) Pin, INPUT POWER (WATTS) Figure 4. Input VSWR versus Frequency Broadband Test Fixture Figure 5. Output Power versus Input Power MOTOROLA RF DEVICE DATA MRF317 3 120 17 Pout = 100 W VCC = 28 V 16 Pout, POWER OUTPUT (WATTS) G PE , COMMON EMITTER POWER GAIN (dB) TYPICAL PERFORMANCE CURVES 15 14 13 12 11 10 Pin = 10 W 8W 100 6W 80 60 40 9 f = 100 MHz 8 20 40 60 80 100 120 140 160 180 20 200 12 16 20 24 28 f, FREQUENCY (MHz) VCC, SUPPLY VOLTAGE (VOLTS) Figure 6. Power Gain versus Frequency Figure 7. Power Output versus Supply Voltage Pin = 10 W 100 8W 6W 80 60 40 Pout, POWER OUTPUT (WATTS) Pout, POWER OUTPUT (WATTS) 120 Pin = 10 W 100 8W 6W 80 60 40 f = 150 MHz 20 12 16 20 24 f = 200 MHz 20 28 12 16 20 24 28 VCC, SUPPLY VOLTAGE (VOLTS) VCC, SUPPLY VOLTAGE (VOLTS) Figure 8. Power Output versus Supply Voltage Figure 9. Power Output versus Supply Voltage 0 1.0 2.0 3.0 4.0 Zin 200 50 1.0 125 100 200 1.0 175 f = 30 MHz 2.0 150 175 2.0 100 125 150 3.0 ZOL* 4.0 5.0 50 f = 30 MHz VCC = 28 V, Pout = 100 W 3.0 6.0 f MHz Zin OHMS ZOL* OHMS 30 50 100 125 150 175 200 1.2 – j2.0 1.0 – j1.8 0.3 + j0.7 0.3 + j1.0 0.6 + j1.3 1.0 + j1.5 0.9 + j1.0 4.3 – j5.0 4.0 – j4.9 2.0 – j2.3 1.9 – j1.9 1.9 – j1.3 1.6 – j0.6 1.1 – j0.6 ZOL* = Conjugate of the optimum load impedance into which the device output ZOL* = operates at a given output power, voltage and frequency. Figure 10. Series Equivalent Input–Output Impedance MRF317 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 DIM A B C D E F H J K L N Q R U 1 Q 2 L B J C E N INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 H A U STYLE 1: PIN 1. 2. 3. 4. EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF317 5 Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF317 6 ◊ *MRF317/D* MRF317/D MOTOROLA RF DEVICE DATA