ON Semiconductor MPS2369 MPS2369A* Switching Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 15 Vdc Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 4.5 Vdc Collector Current — Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit RJA 200 °C/W Operating and Storage Junction Temperature Range 1 2 3 CASE 29–11, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient COLLECTOR 3 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit V(BR)CEO 15 — — Vdc V(BR)CES 40 — — Vdc V(BR)CBO 40 — — Vdc V(BR)EBO 4.5 — — Vdc — — — — 0.4 30 — — 0.4 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) MPS2369A Collector–Emitter Breakdown Voltage (IC = 10 µAdc, VBE = 0) MPS2369,A Collector–Base Breakdown Voltage (IC = 10 Adc, IE = 0) MPS2369,A Emitter–Base Breakdown Voltage (IE = 10 Adc, IC = 0) MPS2369,A Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 125°C) MPS2369,A Collector Cutoff Current (VCE = 20 Vdc, VBE = 0) MPS2369,A µAdc ICBO ICES µAdc 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 June, 2001 – Rev. 2 1 Publication Order Number: MPS2369/D MPS2369 MPS2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Typ Max Unit — 20 40 40 20 30 20 20 — — — — — — — — 120 — 120 — — — — — — — — — — — — — — — 0.25 0.20 0.30 0.25 0.50 0.7 0.5 — — — — — — — — 0.85 — 1.02 1.15 1.60 Cobo — — 4.0 pF hfe 5.0 — — — ts — 5.0 13 ns ton — 8.0 12 ns toff — 10 18 ns ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc, TA = –55°C) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc) (IC = 10 mAdc, VCE = 0.35 Vdc, TA = –55°C) (IC = 30 mAdc, VCE = 0.4 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector–Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) hFE MPS2369A MPS2369 MPS2369 MPS2369A MPS2369A MPS2369A MPS2369 MPS2369A — VCE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A Base–Emitter Saturation Voltage(1) (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 10 mAdc, IB = 1.0 mAdc, TA = +125°C) (IC = 10 mAdc, IB = 1.0 mAdc, TA = –55°C) (IC = 30 mAdc, IB = 3.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Vdc VBE(sat) MPS2369 MPS2369A MPS2369A MPS2369A MPS2369A Vdc SMALL–SIGNAL CHARACTERISTICS Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) MPS2369,A Small–Signal Current Gain (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) MPS2369,A SWITCHING CHARACTERISTICS Storage Time (IB1 = IB2 = IC = 10 mAdc) (Figure 3) MPS2369,A Turn–On Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) (Figure 1) MPS2369,A Turn–Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) (Figure 2) MPS2369,A 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MPS2369 MPS2369A 3.0 V t1 +10.6 V 0 -1.5 V 270 3.3 k < 1.0 ns CS* < 4.0 pF PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% Figure 1. ton Circuit +10.75 V t1 3.0 V 0 -4.15 V 270 < 1.0 ns 3.3 k PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 4.0 pF Figure 2. toff Circuit +6.0 V t1 10 V 980 0 -4.0 V 500 < 1.0 ns PULSE WIDTH (t1) = 300 ns DUTY CYCLE = 2.0% CS* < 3.0 pF Figure 3. Storage Test Circuit *Total shunt capacitance of test jig and connectors. http://onsemi.com 3 MPS2369 MPS2369A PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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