Order this document by MRF313/D SEMICONDUCTOR TECHNICAL DATA The RF Line . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficiency = 45% Typ 1.0 W, 400 MHz HIGH–FREQUENCY TRANSISTOR NPN SILICON • Emitter Ballast and Low Current Density for Improved MTBF • Common Emitter for Improved Stability CASE 305A–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 30 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous IC 150 mAdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 6.1 35 Watts mW/°C Storage Temperature Range Tstg –65 to +150 °C Symbol Max Unit RθJC 28.5 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit V(BR)CEO 30 — — Vdc Collector–Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 35 — — Vdc Collector–Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 35 — — Vdc Emitter–Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.0 — — Vdc ICEO — — 1.0 mAdc OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) Collector Cutoff Current (VCE = 20 Vdc, IB = 0) (continued) 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 20 60 150 — fT — 2.5 — GHz Cob — 3.5 5.0 pF Common–Emitter Amplifier Power Gain (1) (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Gpe 15 16 — dB Collector Efficiency (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) η — 45 — % Series Equivalent Input Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zin — 6.4 – j4.8 — Ohms Series Equivalent Output Impedance (VCC = 28 Vdc, Pout = 1.0 W, f = 400 MHz) Zout — 75 – j45 — Ohms ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 100 mAdc, VCE = 20 Vdc, f = 200 MHz) Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS NOTE: 1. Class C & # "! % % % "!"! "! C1, C2, C4 — 1.0–20 pF JOHANSON 9063 C3 — 1.0–10 pF JOHANSON C5 — 150 pF Chip C6 — 0.1 µF C7, C8 — 680 pF Feedthru C9 — 1.0 µF TANTALUM L1, L3 — 5 Turns, AWG #20, 1/4″ I.D. L2 — Ferrite Bead, FERROXCUBE L2 — No. 56–590–65/4B L4 — FERROXCUBE VK200–20/4B L4 — Input/Output Connectors — Type N Board — Glass Teflon, ε = 2.56, t = 0.062″ Figure 1. 400 MHz Power Gain Test Circuit 2 R — 4.7 Ohms, 1/4 W Z1 — 2.0″ x 0.1″ MICROSTRIP LINE Z2, Z3 — 2.6″ x 0.1″ MICROSTRIP LINE PACKAGE DIMENSIONS M D K ! ! $ ! F J !$ A C H CASE 305A–01 ISSUE A Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 3 !! !! !