MOTOROLA MMBF2201NT1

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by MMBF2201NT1/D
SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device
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Part of the GreenLine Portfolio of devices with energy–conserving traits.
N – CHANNEL
ENHANCEMENT– MODE
TMOS MOSFET
rDS(on) = 1.0 OHM

These miniature surface mount MOSFETs utilize Motorola’s High
Cell Density, HDTMOS process. Low rDS(on) assures minimal
power loss and conserves energy, making this device ideal for use
in small power management circuitry. Typical applications are
dc–dc converters, power management in portable and battery–
powered products such as computers, printers, PCMCIA cards,
cellular and cordless telephones.
3 DRAIN
CASE 419–02, Style 7
SC–70/SOT–323
• Low rDS(on) Provides Higher Efficiency and Extends Battery Life 1
GATE
• Miniature SC–70/ SOT– 323 Surface Mount Package Saves
Board Space
2 SOURCE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
20
Vdc
Gate–to–Source Voltage — Continuous
VGS
± 20
Vdc
Drain Current — Continuous @ TA = 25°C
Drain Current — Continuous @ TA = 70°C
Drain Current — Pulsed Drain Current (tp ≤ 10 µs)
ID
ID
IDM
300
240
750
mAdc
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
PD
150
1.2
mW
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction–to–Ambient
RθJA
833
°C/W
TL
260
°C
Rating
Drain–to–Source Voltage
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
DEVICE MARKING
N1
(1) Mounted on G10/FR4 glass epoxy board using minimum recommended footprint.
ORDERING INFORMATION
Device
Reel Size
Tape Width
Quantity
MMBF2201NT1
7″
8 mm embossed tape
3000
MMBF2201NT3
13″
8 mm embossed tape
10,000
GreenLine is a trademark of Motorola, Inc.
HDTMOS is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a registered trademark of the Berquist Company.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola
Transistors, FETs and Diodes Device Data

Motorola, Small–Signal
Inc. 1995
1
MMBF2201NT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
—
—
Vdc
—
—
—
—
1.0
10
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µA)
µAdc
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
—
—
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain–to–Source On–Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
—
—
0.75
1.0
1.0
1.4
gFS
—
450
—
mMhos
pF
ON CHARACTERISTICS(1)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
—
45
—
Output Capacitance
(VDS = 5.0 V)
Coss
—
25
—
Transfer Capacitance
(VDG = 5.0 V)
Crss
—
5.0
—
td(on)
—
2.5
—
tr
—
2.5
—
td(off)
—
15
—
tf
—
0.8
—
QT
—
1400
—
pC
IS
—
—
0.3
A
Pulsed Current
ISM
—
—
0.75
Forward Voltage(2)
VSD
—
0.85
—
SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 Ω)
Fall Time
Gate Charge (See Figure 5)
ns
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
V
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
1.6
1.0
1.4
VGS = 4 V
0.8
RDS , ON RESISTANCE (OHMS)
ID , DRAIN CURRENT (AMPS)
0.9
0.7
0.6
VGS = 3.5 V
0.5
0.4
VGS = 3 V
0.3
0.2
VGS = 2.5 V
0.1
1
4
7
8
2
3
5
6
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
9
Figure 1. Typical Drain Characteristics
2
VGS = 4.5 V
1.0
ID = 100 mA
0.8
VGS = 10 V
0.6
ID = 300 mA
0.4
0.2
0
0
1.2
10
0
– 60 – 40 – 20
0
20 40 60 80
TEMPERATURE (°C)
100 120 140 160
Figure 2. On Resistance versus Temperature
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF2201NT1
TYPICAL CHARACTERISTICS
1.2
RDS , ON RESISTANCE (OHMS)
RDS , ON RESISTANCE (OHMS)
10
ID = 300 mA
8
6
4
2
VGS = 4.5 V
1.0
0.8
0.6
VGS = 10 V
0.4
0.2
0
0
0
1
2
6
7
8
3
4
5
GATE – SOURCE VOLTAGE (VOLTS)
9
0
10
Figure 3. On Resistance versus Gate– Source
Voltage
0.1
0.2
0.5
0.3
0.4
0.6
ID, DRAIN CURRENT (AMPS)
0.8
Figure 4. On Resistance versus Drain Current
45
1.0
VGS = 0 V
F = 1 mHz
40
35
C, CAPACITANCE (pF)
I S , SOURCE CURRENT (AMPS)
0.7
0.1
0.01
30
25
20
Ciss
15
Coss
10
Crss
5
0
0.001
0
0.1
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
VSD, SOURCE – DRAIN FORWARD VOLTAGE (VOLTS)
1.0
0
4
8
12
16
6
10
14
VDS, DRAIN – SOURCE VOLTAGE (VOLTS)
2
Figure 5. Source – Drain Forward Voltage
18
20
Figure 6. Capacitance Variation
1.0
I D , DRAIN CURRENT (AMPS)
0.9
0.8
– 55
0.7
25
150
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE – SOURCE VOLTAGE (VOLTS)
4.0
4.5
Figure 7. Transfer Characteristics
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMBF2201NT1
INFORMATION FOR USING THE SC–70/SOT–323 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the total
design. The footprint for the semiconductor packages must
be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.025
0.025
0.65
0.65
0.075
1.9
0.035
0.9
0.028
inches
0.7
mm
SC–70/SOT–323
SC–70 / SOT–323 POWER DISSIPATION
The power dissipation of the SC –70 / SOT– 323 is a
function of the drain pad size. This can vary from the
minimum pad size for soldering to a pad size given for
maximum power dissipation. Power dissipation for a surface
mount device is determined by TJ(max), the maximum rated
junction temperature of the die, RθJA, the thermal resistance
from the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data sheet
for the SC–70 package, PD can be calculated as follows:
PD =
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature TA of 25°C, one can
calculate the power dissipation of the device which in this
case is 150 milliwatts.
PD =
150°C – 25°C
833°C/W
= 150 milliwatts
The 833°C/W for the SC –70 / SOT– 323 package assumes
the use of the recommended footprint on a glass epoxy
printed circuit board to achieve a power dissipation of 150
milliwatts. There are other alternatives to achieving higher
power dissipation from the SC –70 / SOT– 323 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
4
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within a
short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and soldering
should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering method,
the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the maximum
temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should be
allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and result
in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied during
cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMBF2201NT1
PACKAGE DIMENSIONS
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
B
S
1
2
D
V
G
C
0.05 (0.002)
R N
J
K
H
DIM
A
B
C
D
G
H
J
K
L
N
R
S
V
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.035
0.049
0.012
0.016
0.047
0.055
0.000
0.004
0.004
0.010
0.017 REF
0.026 BSC
0.028 REF
0.031
0.039
0.079
0.087
0.012
0.016
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.90
1.25
0.30
0.40
1.20
1.40
0.00
0.10
0.10
0.25
0.425 REF
0.650 BSC
0.700 REF
0.80
1.00
2.00
2.20
0.30
0.40
STYLE 7:
PIN 1. DRAIN
2. GATE
3. COLLECTOR
CASE 419–02
SC–70/SOT–323
ISSUE E
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
MMBF2201NT1
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
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are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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6
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*MMBF2201NT1/D*
Motorola Small–Signal Transistors, FETs and Diodes
Device Data
MMBF2201NT1/D