Switching Diodes MA3S132K Silicon epitaxial planar type Unit : mm 1.60 − 0.03 0.80 0.80 0.51 0.51 ■ Features 3 + 0.05 0.60 − 0.03 + 0.05 0.12 − 0.02 0.28 ± 0.05 2 ■ Absolute Maximum Ratings Ta = 25°C Parameter 1 + 0.05 • Short reverse recovery time trr • Small terminal capacitance, Ct • Super-small SS-mini type package, allowing high-density mounting 0.28 ± 0.05 1.60 ± 0.1 0.80 0.80 ± 0.05 0.28 ± 0.05 For switching circuits Symbol Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V Forward current (DC) IF 100 mA Peak forward current IFM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.44 0.44 + 0.05 0.88 − 0.03 1 : Anode 2 : NC 3 : Cathode SS-Mini Type Package (3-pin) Marking Symbol: MI Internal Connection Note) * : t = 1 s 1 3 2 ■ Electrical Characteristics Ta = 25°C Parameter Symbol Conditions Min Typ Max Unit Reverse current (DC) IR VR = 75 V 100 nA Forward voltage (DC) VF IF = 100 mA 1.2 V Reverse voltage (DC) VR IR = 100 µA Terminal capacitance Ct VR = 0 V, f = 1 MHz 2 pF Reverse recovery time* trr IF = 10 mA, VR = 6 V Irr = 0.1 · IR, RL = 100 Ω 3 ns 80 V Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω 38 W.F.Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 · IR IF = 10 mA VR = 6 V RL = 100 Ω 1 MA3S132K Switching Diodes 104 Ta = 150°C 100°C 25°C − 20°C 1 10−1 1.6 1.4 Ta = 150°C Forward voltage VF (V) 102 10 VF Ta IR V R 105 Reverse current IR (nA) Forward current IF (mA) IF V F 103 100°C 103 102 25°C 1.2 1.0 IF = 100 mA 0.8 10 mA 0.6 3 mA 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 1 1.2 0 Forward voltage VF (V) 20 IR Ta 100 Terminal capacitance Ct (pF) 6V 103 102 10 80 120 160 Ambient temperature Ta (°C) 200 40 80 120 1.0 0.8 0.6 0.4 0.2 20 40 60 80 200 100 Reverse voltage VR (V) 120 Ta = 25°C IF(surge) 300 tW Non repetitive 100 30 10 3 1 0.3 0.1 0 160 IF(surge) tW 1 000 0 40 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 35 V 0 0 −40 120 Ct VR VR = 75 V Reverse current IR (nA) 80 1.2 104 2 60 Reverse voltage VR (V) 105 1 −40 40 Forward surge current IF(surge) (A) 10−2 0.1 0.3 1 3 10 Pulse width tW (ms) 30