MITSUBISHI M68745L

MITSUBISHI RF POWER MODULE
M68745L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
Dimensions in mm
OUTLINE DRAWING
BLOCK DIAGRAM
45
2
3
42
2-R1.5
1
4
5
5
18
5
8.5
(36.5)
PIN:
1 Pin : RF INPUT
2 VGG : GATE BIAS SUPPLY
3 VDD : DRAIN BIAS SUPPLY
4 PO : RF OUTPUT
5 GND: FIN
35
1.5
6.4
1.5
32.2
H50
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Symbol
VDD
VGG
Pin
PO
TC (OP)
Tstg
Parameter
Supply voltage
Gate bias voltage
Input power
Output power
Operation case temperature
Storage temperature
Conditions
ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
f=806-870MHz, ZG=ZL=50Ω
Ratings
9
5.5
6
6
-30 to +100
-40 to +100
Unit
V
V
mW
W
°C
°C
Note. Above parameters are guaranteed independently.
ELECTRICAL CHARACTERISTICS (Tc=25°C, ZG=ZL=50Ω unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
Min
806
3.8
Max
870
f
PO
2fO
ρin
Frequency range
Output power
2nd. harmonic
Input VSWR
ηT
Total efficiency
PO=3.8W(VGG=Adjust), VDD=7.2V,
Pin=1mW, ZG=ZL=50Ω
Stability
ZG=ZL=50Ω, VDD=5-9.3V,
Load VSWR <4:1
No parasitic oscillation
Load VSWR tolerance
VDD=9V, Pin=1mW,
PO=3.8W (VGG Adjust), ZL=20:1
No degradation or
destroy
VDD=7.2V, VGG=5V, Pin=1mW,
ZG=ZL=50Ω
-30
4
30
Unit
MHz
W
dBc
%
Note. Above parameters, ratings, limits and test conditions are subject to change.
Nov. ´97
MITSUBISHI RF POWER MODULE
M68745L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
TYPICAL PERFORMANCE DATA
OUTPUT POWER, INPUT VSWR,
TOTAL EFFICIENCY VS. FREQUENCY
6
60
PO
5
4
50
40
ηT
3
30
2
20
VDD=7.2V
ρin
1 VGG=5V
10
Pin=1mW
ZG=ZL=50 Ω
0
0
760 780 800 820 840 860 880 900
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
10.00
100
f=806MHz
PO
VDD=7.2V
VGG=5V
ηT
ZG=ZL=50Ω
1.00
10
0.10
1
0.01
-30 -25 -20 -15 -10
FREQUENCY f (MHz)
0.10
1
-5
0
5
0
10
ηT
45
PO
3.5
50
45
40
35
30
2.5
25
2.0
20
1.5
15
1.0
10
0.5
5
0.0
2.5
3.0
3.5
4.0
0
5.0
4.5
GATE VOLTAGE VGG (V)
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
5.0
50
4.0
0
10
5
OUTPUT POWER, TOTAL EFFICIENCY
VS. GATE VOLTAGE
5.0
PO
f=806MHz
4.5
VDD=7.2V
4.0 Pin=1mW
ZG=ZL=50 Ω
3.5
ηT
3.0
INPUT POWER Pin (dBm)
4.5
0
INPUT POWER Pin (dBm)
OUTPUT POWER, TOTAL EFFICIENCY
VS. INPUT POWER
10.00
100
f=870MHz
PO
VDD=7.2V
ηT
VGG=5V
ZG=ZL=50Ω
1.00
10
0.01
-30 -25 -20 -15 -10
-5
40
35
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
f=806MHz
12 VGG=5V
60
Pin=1mW
10 ZG=ZL=50Ω
50
PO
3.0
30
2.5
25
2.0
20
6
1.5
15
f=870MHz
10
VDD=7.2V
Pin=1mW
5
ZG=ZL=50 Ω
0
4.0
4.5
5.0
4
20
2
10
1.0
0.5
0.0
2.5
3.0
3.5
GATE VOLTAGE VGG (V)
8
30
ηT
0
4
5
6
7
8
9
10
11
40
0
12
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97
MITSUBISHI RF POWER MODULE
M68745L
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3.8W, FM PORTABLE RADIO
OUTPUT POWER, TOTAL EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
14
70
f=870MHz
12 VGG=5V
60
Pin=1mW
P
O
10 ZG=ZL=50Ω
50
8
40
ηT
6
30
4
20
2
10
0
4
5
6
7
8
9
10
11
0
12
DRAIN SUPPLY VOLTAGE VDD (V)
Nov. ´97