ATTENTION MITSUBISHI RF POWER MODULE OBSERVE PRECAUTIONS FOR HANDLING M68772 ELETROSTATIC SENSITIVE DEVICES Silicon MOS FET Power Amplifier, 890-915MHz 13W FM Mobile B L O C K D IA G R A M D i m e n s io n s i n m m O U T L IN E D R A W IN G 6 0 .5 + /-1 2 3 5 7 .5 + /-0 .5 5 0 .2 + /-1 2 3 φ 1 4 + /-0.5 5 4 1 4 5 1 0 + /-1 1 1 1 + /-0.5 + 0 .2 2 -R 1 .6 0 0 .4 5 + /-0 .2 8 .3 + /-1 P IN : 2 1 .3 + /-1 1 P in 4 3 .3 + /-1 : R F IN P U T 2 V G G : G A T E B IA S S U P P L Y 5 1 .3 + /-1 3 V D D : D R A IN B IA S S U P P L Y 4 PO : RF OUTPUT (6.4) 2 .3 + /-0 .3 -0.4 3 .4 + 0 .8 5 G N D : F IN H11 MAXIMUM RATINGS (Tc=25deg C UNLESS OTHERWISE NOTED) SYMBOL PARAMETER VDD SUPPLY VOLTAGE VGG GATE BIAS VOLTAGE Pin INPUT POWER Po OUTPUT POWER Tc(OP) OPERATION CASE TEMPERATURE Tstg STORAGE TEMPERATURE Note:Above parameters are guaranteed independently. CONDITIONS VGG<5V,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms f=890-915MHz,ZG=ZL=50 ohms RATINGS 17 5.5 10 20 -30 to +100 -40 to +100 UNIT V V mW W deg. C deg. C ELECTRICAL CHARACTERISTICS (Tc=25deg. C ,Zg=Zl=50 ohms UNLESS OTHERWISE NOTED) SYMBOL f Po Efficiency 2fo VSWR in Switching Time - PARAMETER FREQUENCY RANGE OUTPUT POWER TOTAL EFFICIENCY 2nd HARMONIC INPUT VSWR tr, tf TEST CONDITIONS VDD=12.5V, VGG=4V, Pin=2mW VDD=12.5V, Pin=2mW Po=13W (VGG adjust) Po=13W(VGG adjust), VGG: ON/OFF Vdd=12.5V, Pin=2mW STABILITY ZG=50 ohms, VDD=10-16V, Pin=1-4mW, Po=0.1-20W (VGG Control), LOAD VSWR < 4:1 LOAD VSWR TOLERANCE VDD=15.2V,Pin=2mW,Po=13W(VGG adjust) ZG=50 ohms, LOAD VSWR=20:1 LIMITS MIN MAX 890 915 13 35 -30 4 2.0 No parasitic oscillation No degradation or destroy UNIT MHz W % dBc micro sec - ABOVE PARAMETERS, RATINGS, LIMITS AND CONDITIONS ARE SUBJECT TO CHANGE . Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. M68772 Pout, Efficiency vs. freq. 20 18 16 14 12 10 8 6 4 2 0 860 870 880 890 900 freq.(MHz) 910 50.0 48.0 46.0 44.0 42.0 40.0 38.0 36.0 Pout 34.0 Eta 32.0 30.0 920 930 Efficiency(%) Pout(W) Tc=+25deg.C,Pin=2mW(CW),Vdd=12.5V, Vgg=5V,Zg=Zl=50ohms M68772 Pout,Idd vs. Vgg 45 40 35 30 25 20 15 10 5 0 -5 -10 Pout(890MHz) Pout(902.5MHz) Pout(915MHz) Idd(890MHz) Idd(902.5MHz) Idd(915MHz) 1.5 2.5 3.5 Vgg (V) 4.5 5.5 5 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 Idd(A) Pout (dBm) Tc=+25deg.C,Pin=2mW(puls),Vdd=13.8V Pin:duty=13%,width=10msec Zg=Zl=50ohms