Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0520 Features • Cascadable 50 Ω Gain Block • High Output Power: +23 dBm Typical P1 dB at 1.0␣ GHz • Low Distortion: 33 dBm Typical IP3 at 1.0␣ GHz • 8.5 dB Typical Gain at 1.0␣ GHz • Hermetic Metal/Beryllia Microstrip Package Description The MSA-0520 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO disk package for good thermal characteristics. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 15 V RFC (Optional) 4 C block C block 3 IN 1 2 5965-9582E OUT MSA Vd = 12 V 6-358 200 mil BeO Package MSA-0520 Absolute Maximum Ratings Absolute Maximum[1] Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature 225 mA 3.0 W +25 dBm 200°C –65 to 200°C Thermal Resistance[2,4]: θjc = 25°C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25°C. 3. Derate at 40 mW/°C for TC > 125°C. 4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section “Thermal Resistance” for more information. Electrical Specifications[1], TA = 25°C Symbol Parameters and Test Conditions: Id = 165 mA, ZO = 50 Ω Min. Typ. dBm 21.0 23.0 7.5 P1 dB Output Power at 1 dB Gain Compression GP Power Gain (|S21| 2) f = 0.1 GHz dB ∆GP Gain Flatness f = 0.1 to 2.0 GHz dB f3 dB 3 dB Bandwidth[2] VSWR Input VSWR f = 1.0 GHz Units 8.5 GHz 2.8 f = 0.1 to 2.0 GHz 2.0:1 Output VSWR f = 0.1 to 2.0 GHz Third Order Intercept Point f = 1.0 GHz NF50 Ω 50 Ω Noise Figure f = 1.0 GHz dB 6.5 tD Group Delay f = 1.0 GHz psec 170 Device Voltage dV/dT Device Voltage Temperature Coefficient 9.5 ± 0.75 IP3 Vd Max. 2.5:1 dBm V mV/°C 33.0 10.5 12.0 13.5 –16.0 Notes: 1. The recommended operating current range for this device is 80 to 200 mA. Typical performance as a function of current is on the following page. 2. Referenced from 0.1 GHz Gain (GP). 6-359 MSA-0520 Typical Scattering Parameters (TA = 25°C, Id = 165 mA) S11 S21 S12 S22 Freq. MHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang k 5 25 50 100 200 400 600 800 1000 1500 2000 2500 3000 3500 4000 .57 .25 .15 .11 .10 .10 .11 .13 .15 .22 .30 .37 .41 .45 .46 –38 –90 –111 –138 –152 –152 –147 –142 –140 –142 –156 –170 170 149 124 14.4 10.7 9.5 8.9 8.8 8.7 8.6 8.5 8.4 8.0 7.4 6.7 5.6 4.5 3.3 5.25 3.42 2.97 2.80 2.75 2.72 2.70 2.67 2.64 2.52 2.36 2.16 1.91 1.68 1.45 165 160 163 166 163 152 140 128 115 85 55 33 8 –16 –40 –19.4 –14.9 –14.4 –14.2 –14.1 –14.1 –14.0 –14.1 –14.1 –13.7 –13.3 –12.9 –12.7 –12.1 –11.7 .107 .180 .190 .195 .197 .198 .199 .199 .198 .206 .216 .227 .232 .249 .259 38 17 9 3 1 –2 –4 –6 –8 –12 –16 –18 –23 –31 –39 .67 .29 .18 .11 .10 .14 .18 .22 .27 .34 .43 .48 .51 .55 .56 –35 –81 –97 –113 –125 –123 –123 –127 –131 –143 –158 –166 –177 173 162 0.57 0.93 1.10 1.16 1.17 1.16 1.14 1.12 1.09 0.98 0.85 0.75 0.70 0.63 0.66 A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25°C (unless otherwise noted) 10 200 36 8 150 0.5 GHz 1.0 GHz 2.0 GHz 1.5 GHz 4 TC = –50°C 2 18 20 22 24 26 28 0 30 3 6 9 12 15 26 120 160 200 Figure 2. Device Current vs. Voltage. Figure 3. Output Power at 1 dB Gain Compression, Third Order Intercept vs. Current, f = 1.0 GHz. 4 8 3 0.5 GHz 24 Output 6 VSWR 1.0 GHz 22 Gp (dB) P1 dB (dBm) 20 Id (mA) 10 28 P1 dB Vd (V) POWER OUT (dBm) Figure 1. Typical Gain vs. Power Out, TA = 25°C, Id = 165 mA. 28 16 80 0 16 IP3 24 50 0 14 32 100 P1 dB (dBm) 6 I d (mA) GAIN (dB) 0.1 GHz IP3 (dBm) TC = +100°C TC = +25°C 2 4 20 18 Input 1 Id = 200 mA 2 Id = 165 mA 2.0 GHz Id = 80 mA 16 -50 +25 +100 CASE TEMPERATURE (°C) Figure 4. Output Power @ 1 dB Gain Compression vs. Temperature, Id = 165 mA. 0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) Figure 5. Gain vs. Frequency. 6-360 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY, (GHz) Figure 6. VSWR vs. Frequency, Id = 165 mA. 4.0 200 mil BeO Package Dimensions 4 GROUND .300 ± .025 7.62 ± .64 45° .030 .76 3 1 RF INPUT NO REFERENCE GROUND 2 .060 1.52 .048 ± .010 1.21 ± .25 .128 3.25 .205 5.21 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = ± 0.005 mm .xx = ± 0.13 3. Base of package is electrically isolated. .004 ± .002 .10 ± .05 .023 .57 6-361