KSD1273 KSD1273 High hFE, AF Power Amplifier • ”Full PAK” Package for Simplified Mounting Only by a Screw, Requires no Insulator. TO-220F 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value 80 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current (DC) 3 A ICP Collector Current (Pulse) 6 A IB Base Current 1 A PC Collector Dissipation (Ta=25°C) 2 W PC Collector Dissipation (TC=25°C) 40 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C 60 V 6 V Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Voltage Test Condition IC = 25mA, IB = 0 Min. 60 Typ. Max. Units V ICBO Collector Cut-off Current VCB = 80V, IE = 0 100 µA ICEO Collector Cut-off Current VCE = 60V, IB = 0 100 µA IEBO Emitter Cut-off Current VEB = 6V, IC = 0 100 µA hFE DC Current Gain VCE = 4V, IC = 0.5A VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.05A fT Current Gain Bandwidth Product VCE = 12V, IC = 0.2A 500 2500 1 V 30 MHz hFE Classification Classification Q P O hFE 500 ~ 1000 800 ~ 1500 1200 ~ 2500 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD1273 Typical Characteristics 2.0 10000 VCE = 4V 1.6 IB = 1.2mA 1.4 IB = 1mA 1.2 IB = 800uA 1.0 hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT 1.8 IB = 600uA 0.8 IB = 400uA 0.6 IB = 200uA 0.4 1000 100 0.2 0.0 0 1 2 3 4 5 6 7 8 9 10 0.01 10 Figure 1. Static Characteristic VCE(sat)[mV], SATURATION VOLTAGE hFE, DC CURRENT GAIN 10 10000 VCE = 4V 1000 O 25 C O 75 C O 125 C 100 10 0.01 0.1 1 IC = 50 IB o 125 C o 100 10 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE IC = 50 IB o 25 C o 75 C o 125 C 100 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 5. Collector-Base Saturation Voltage ©2001 Fairchild Semiconductor Corporation 1 10 Figure 4. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 10000 10 0.01 0.1 Ic[A], COLLECTOR CURRENT Figure 3. DC current Gain V BE(sat) o 25 C 1 0.01 10 75 C 1000 IC[A], COLLECTOR CURRENT VBE(sat)[mV], SATURATION VOLTAGE 1 Figure 2. DC current Gain 10000 1000 0.1 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE 10 IC = 40 IB 1 V BE(sat) 0.1 V CE(sat) 0.01 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT Figure 6. Base-Emitter Saturation Voltage Rev. A1, June 2001 KSD1273 1000 Cob[pF], CAPACITANCE f = 1MHz 100 10 1 1 10 100 1000 fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT Typical Characteristics (Continued) 1000 100 10 1 0.01 0.1 1 Figure 7. Collector Output Capacitance Figure 8. Current Gain Bandwidth Product 50 10 ICmax(pulse) (1): TC=Ta (2): With a 100x100x2mm AL Heat Sink (3): Without Heat Sink (PC=2W) 45 (1) DC s 10m IC(max) PC[W], POWER DISSIPATION 1mS IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT VCB[V], COLLECTO-BASE VOLTAGE 1 40 35 30 25 20 15 (2) 10 5 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 9. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 100 (3) 0 0 25 50 75 100 125 150 175 o TA[ C], TEMPERATURE Figure 10. Power Derating Rev. A1, June 2001 KSD1273 Package Demensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWER™ FAST® OPTOPLANAR™ ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TruTranslation™ TinyLogic™ UHC™ UltraFET® VCX™ STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3