FDS6688S 30V N-Channel PowerTrench SyncFET™ General Description Features The FDS6688S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. • 16 A, 30 V. RDS(ON) = 6.0 mΩ @ VGS = 10 V RDS(ON) = 7.5 mΩ @ VGS = 4.5 V • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching Applications • • DC/DC converter High power and current handling capability • Motor drives D D D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter 30 V VGSS Gate-Source Voltage ±20 V ID Drain Current 16 A – Continuous (Note 1a) – Pulsed PD 50 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG W 1 –55 to +125 °C (Note 1a) 50 °C/W (Note 1) 25 Operating and Storage Junction Temperature Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6688S FDS6688S 13’’ 12mm 2500 units 2004 Fairchild Semiconductor Corporation FDS6688S Rev C (W) FDS6688S March 2004 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA 30 Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 µA Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA ID = 1 mA ID = 1 mA, Referenced to 25°C V mV/°C 28 On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, gFS Forward Transconductance 1 1.4 3 V ID = 1 mA, Referenced to 25°C –4 VGS = 10 V, ID = 16 A ID = 14.5 A VGS = 4.5 V, VGS=10 V, ID =16 A, TJ=125°C 4.8 5.7 6.5 VDS = 10 V, 74 S 3290 pF 890 pF 290 pF 1.5 Ω ID = 16 A mV/°C 6.0 7.5 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 15 V, f = 1.0 MHz V GS = 0 V, VGS = 15 mV, f = 1.0 MHz (Note 2) VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 12 22 ns 12 22 ns td(off) Turn–Off Delay Time 30 46 ns tf Turn–Off Fall Time 60 96 ns Qg(TOT) Total Gate Charge at VGS=10V 56 78 nC 44 VDS = 15 V, ID = 16 A Qg Total Gate Charge at VGS=5V 31 Qgs Gate–Source Charge 8.2 nC nC Qgd Gate–Drain Charge 9.0 nC Drain–Source Diode Characteristics and Maximum Ratings VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time IRM Diode Reverse Recovery Current Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A IF = 16 A, diF/dt = 300 A/µs (Note 2) 380 30 (Note 3) 700 mV ns 2 A 31 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when mounted on a 1 in2 pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. See “SyncFET Schottky body diode characteristics” below Scale 1 : 1 on letter size paper Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS6688S Rev C (W) FDS6688S Electrical Characteristics FDS6688S Typical Characteristics 50 2.6 VGS = 10V 4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 3.0V 3.5V 30 2.5V 20 10 2.0V 0 0 0.25 0.5 0.75 VDS, DRAIN-SOURCE VOLTAGE (V) 2.2 2 1.8 1.6 3.0V 1.4 3.5V 4.0V 1.2 4.5V 6.0V 1 10V 0.8 1 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.016 1.6 ID = 16.0A VGS =10V ID = 8.0A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 2.5V 2.4 1.4 1.2 1 0.8 0.014 0.012 0.01 TA = 125oC 0.008 0.006 TA = 25oC 0.6 0.004 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 2 Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 50 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 40 ID, DRAIN CURRENT (A) 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 30 TA = 125oC 20 25oC o 10 -55 C 10 TA = 125oC 1 25oC 0.1 o -55 C 0.01 0.001 0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6688S Rev C (W) 5000 ID = 16.0A f = 1MHz VGS = 0 V VDS = 10V 4000 8 20V 6 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 4 2000 Coss 1000 2 Crss 0 0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 0 60 Figure 7. Gate Charge Characteristics. 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100 100us 1ms 10 10ms 100ms 10s 1 1s DC VGS = 10V SINGLE PULSE o RθJA = 125 C/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 SINGLE PULSE RθJA = 125°C/W TA = 25°C 40 30 20 10 0 0.001 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) Ciss 3000 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJC(t) = r(t) * RθJC RθJC = 125 °C/W 0.2 0.1 0.1 0.05 P(pk 0.02 0.01 t1 t2 0.01 TJ - TC = P * RθJC(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS6688S Rev C (W) FDS6688S Typical Characteristics (continued) FDS6688S Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. 0.1 IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT : 0.8A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6688S. TA = 125oC 0.01 TA = 100oC 0.001 TA = 25oC 0.0001 0.00001 0 TIME : 12.5ns/div 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. Figure 12. FDS6688S SyncFET body diode reverse recovery characteristic. CURRENT : 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6688). TIME : 12.5ns/div Figure 13. Non-SyncFET (FDS6688) body diode reverse recovery characteristic. FDS6688S Rev C (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I9