ON Semiconductor Amplifier Transistor 2N4410 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 80 Vdc Collector–Base Voltage VCBO 120 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous IC 250 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 Watts mW/°C TJ, Tstg –55 to +150 °C Symbol Max Unit Operating and Storage Junction Temperature Range 1 2 3 CASE 29–11, STYLE 1 TO–92 (TO–226AA) COLLECTOR 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient RJA 200 °C/W Thermal Resistance, Junction to Case RJC 83.3 °C/W 2 BASE 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR)CEO 80 — Vdc V(BR)CEX 120 — Vdc V(BR)CBO 120 — Vdc V(BR)EBO 5.0 — Vdc — — 0.01 1.0 — 0.1 OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector–Emitter Breakdown Voltage (IC = 500 µAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) Collector–Base Breakdown Voltage (IC = 10 µAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = 10 µAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) ICBO Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO µAdc µAdc 1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%. Semiconductor Components Industries, LLC, 2001 November, 2001 – Rev. 11 1 Publication Order Number: 2N4410/D 2N4410 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Characteristic Min Max 60 60 — 400 Unit ON CHARACTERISTICS DC Current Gain (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VCE(sat) — 0.2 Vdc Base–Emitter Saturation Voltage (IC = 1.0 mAdc, IB = 0.1 mAdc) VBE(sat) — 0.8 Vdc Base–Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) VBE(on) — 0.8 Vdc fT 60 300 MHz Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) Ccb — 12 pF Emitter–Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) Ceb — 50 pF SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) 2. fT = |hfe| • ftest. http://onsemi.com 2 2N4410 500 h FE, DC CURRENT GAIN 300 200 VCE = 1.0 V VCE = 5.0 V TJ = 125°C 25°C 100 50 -55°C 30 20 10 7.0 5.0 0.1 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 0.9 0.8 0.7 0.6 IC = 1.0 mA 10 mA 100 mA 30 mA 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 Figure 2. Collector Saturation Region http://onsemi.com 3 5.0 10 20 50 2N4410 IC, COLLECTOR CURRENT (A) µ 101 100 VCE = 30 V TJ = 125°C 10-1 10-2 75°C 10-3 REVERSE FORWARD 25°C 10-4 10-5 0.4 IC = ICES 0.3 0.2 0.1 0 0.1 0.2 0.3 0.4 VBE, BASE-EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut–Off Region 1.0 θV, TEMPERATURE COEFFICIENT (mV/°C) TJ = 25°C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 TJ = -55°C to +135°C 1.5 1.0 0.5 VC for VCE(sat) 0 -0.5 -1.0 VB for VBE(sat) -1.5 -2.0 -2.5 0.1 100 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 4. “On” Voltages 100 70 50 VBB -8.8 V 10.2 V Vin VCC 30 V 100 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 3.0 k RC RB Vout 5.1 k Vin 100 50 100 Figure 5. Temperature Coefficients C, CAPACITANCE (pF) V, VOLTAGE (VOLTS) 0.8 2.5 2.0 1N914 TJ = 25°C 30 20 10 Cibo 7.0 5.0 Cobo 3.0 2.0 1.0 0.2 Values Shown are for IC @ 10 mA 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances http://onsemi.com 4 10 20 2N4410 1000 500 100 td @ VEB(off) = 1.0 V 30 VCC = 120 V 20 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) IC/IB = 10 TJ = 25°C tf @ VCC = 30 V 1000 t, TIME (ns) t, TIME (ns) 2000 tr @ VCC = 30 V 50 tf @ VCC = 120 V 3000 tr @ VCC = 120 V 300 200 5000 IC/IB = 10 TJ = 25°C 500 300 200 ts @ VCC = 120 V 100 100 50 0.2 0.3 0.5 200 Figure 8. Turn–On Time 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) Figure 9. Turn–Off Time http://onsemi.com 5 100 200 2N4410 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–11 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L SEATING PLANE K DIM A B C D G H J K L N P R V D X X G J H V C SECTION X–X 1 N N STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR http://onsemi.com 6 INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- 2N4410 Notes http://onsemi.com 7 2N4410 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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