INTEGRATED CIRCUITS DATA SHEET TDA5731M Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners Product specification File under Integrated Circuits, IC02 Philips Semiconductors 1995 Mar 21 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M FEATURES GENERAL DESCRIPTION • Balanced mixer with a common emitter input for band A (single input) The TDA5731M is a monolithic integrated circuit that performs the band A, band B and band C mixer/oscillator functions in TV and VCR tuners. This low power mixer/oscillator circuit requires a power supply of 5 V and is available in a very small package outline. This device gives the designer the capability to design an economical and physically small 3-band tuner. The tuner development time can be drastically reduced by using this device. • 2-pin oscillator for bands A and B • 3-pin oscillator for band C • Balanced mixer with a common base input for band B and C (balanced input) • Local oscillator buffer output for external synthesizer • SAW filter preamplifier with a low output impedance to drive the SAW filter directly In addition, when hyperband is not required, the TDA5731M may be used in a VHF/UHF tuner with an appropriate tuned circuit for VHFl and VHFlll in band A and the tuned circuit of band C for UHF. • Electronic band switch. APPLICATIONS • 3-band TV tuners • 3-band TV front-ends • 3-band VCR tuners • 3-band VCR front-ends. QUICK REFERENCE DATA SYMBOL PARAMETER VP supply voltage IP supply current fR frequency range N noise figure IP intermodulation Gv voltage gain CONDITIONS MIN. − TYP. MAX. UNIT 5.0 − V − 36 − mA band A 42 − 180 MHz band B 160 − 470 MHz band C 430 − 860 MHz band A − 7.5 − dB band B − 8.0 − dB band C − 9.0 − dB band A − −66 − dB band B − −66 − dB band C − −66 − dB band A − 23 − dB band B − 34 − dB band C − 33 − dB ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION TDA5731M SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1 1995 Mar 21 2 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M BLOCK DIAGRAM band C inputs handbook, full pagewidth band A input 15 20 BAND A STAGE RF GND 19 BAND C STAGE 18 band B inputs VP 17 16 14 local oscillator amplifier outputs band switch input 13 12 11 DC STABILIZER BAND B STAGE LOCAL OSCILLATOR AMPLIFIER MIXER MIXER MIXER BAND A OSCILLATOR BAND C OSCILLATOR BAND B OSCILLATOR 1 3 2 4 6 5 ELECTRONIC BAND SWITCH TDA5731M 7 8 IF AMPLIFIER 9 GND band A oscillator tuned cicuit band C oscillator tuned cicuit band B oscillator tuned cicuit Fig.1 Block diagram. 1995 Mar 21 3 IF outputs 10 MBE374 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M PINNING SYMBOL PIN DESCRIPTION AOSCIB 1 band A oscillator input base COSCIB 2 band C oscillator input base AOSCOC 3 band A oscillator output collector COSCOC1 4 band C oscillator output collector 1 BOSCIB 5 band B oscillator input base COSCOC2 6 band C oscillator output collector 2 BOSCOC 7 band B oscillator output collector GND 8 ground (0 V) IFOUT1 9 IF amplifier output 1 IFOUT2 10 IF amplifier output 2 BS 11 band switch input LOOUT1 12 LOOUT2 AOSCIB 1 20 CIN2 COSCIB 2 19 CIN1 AOSCOC 3 18 RFGND COSCOC1 4 17 BIN2 BOSCIB 5 16 BIN1 TDA5731M COSCOC2 6 15 AIN BOSCOC 7 14 VP GND 8 13 LOOUT2 local oscillator amplifier output 1 IFOUT1 9 12 LOOUT1 13 local oscillator amplifier output 2 IFOUT2 10 VP 14 supply voltage AIN 15 band A input BIN1 16 band B input 1 BIN2 17 band B input 2 RFGND 18 ground for RF input CIN1 19 band C input 1 CIN2 20 band C input 2 1995 Mar 21 handbook, halfpage 11 BS MBE373 Fig.2 Pin configuration. 4 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX/ UNIT VP supply voltage −0.3 +7.0 V VSW(max) maximum switching voltage −0.3 +7.5 V VP(op) operating supply voltage 4.5 5.5 V Vn(max) maximum voltage on each pin with a 22 kΩ resistor connected in series − 35 V IO output current of each pin to ground − −10 mA tsc(max) maximum short-circuit time (all pins) − 10 s Tstg storage temperature −55 +150 °C Tamb operating ambient temperature −10 +80 °C Tj junction temperature − +150 °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient in free air VALUE UNIT 120 K/W HANDLING Human Body Model: GND (8), RFGND (18), VP (14) shorted together. Pins 4, 6 and 7 withstand 500 V. All other pins withstand 2000 V. Machine Model: GND (8), RFGND (18), VP (14) shorted together. Pins 4, 6 and 7 withstand 50 V. All other pins withstand 200 V. IF AMPLIFIER CHARACTERISTICS VP = 5 V; Tamb = 25 °C; differentialy measured at 36 MHz; measured in circuit of Fig.6; unless otherwise specified. TYP. SYMBOL PARAMETER CONDITIONS MIN. MAX. MOD. S22 output reflection coefficient note 1; see Fig.11 − − dB/° Zo output impedance (Rs + Ls) Rs − 74 − Ω Ls − 21 − nH Note 1. All S parameters are referenced to a 50 Ω system. 1995 Mar 21 5 −14 UNIT PHASE +9 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M CHARACTERISTICS VP = 5 V; Tamb = 25 °C; measured in circuit of Fig.6; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply (Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V) VP supply voltage 4.5 5.0 5.5 V IP supply current 28 36 44 mA VSW switching voltage (depending on supply voltage VP) band A 0 − 0.18VP V band B 0.26VP − 0.47VP V band C 0.55VP − VP V switching current band A − − 2 µA band B − − 10 µA band C − − 25 µA 42 − 180 MHz fi = 50 MHz; see Fig.3 − 7.5 9 dB fi = 180 MHz; see Fig.3 − 9 10 dB optimum source conductance for minimum noise figure fi = 50 MHz − 0.5 − mS fi = 180 MHz − 1.1 − mS input admittance (GP//CP) fi = 50 MHz; see Fig.7 − 0.27 − mS fi = 180 MHz; see Fig.7 − 0.34 − mS fi = 50 to 180 MHz; see Fig.7 − 1.9 − pF ISW Band A mixer (including IF amplifier) fR frequency range N noise figure gos YI IP3 intermodulation using the 3 signals method fN = 180 MHz; note 1 − −66 −60 dB Vi input voltage 10 kHz pulling in channel; fi = 180 MHz 96 100 − dBµV Gv voltage gain 20log(V9-10/V15); fi = 50 MHz; note 2 20.5 23 25.5 dB 20log(V9-10/V15); fi = 180 MHz; note 2 20.5 23 25.5 dB Band A oscillator fR frequency range Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; Vtune = 0.45 to 28 V 80 − 210 MHz fshift frequency shift ∆Vp = ±5%; note 3 − − 200 kHz χripple(p-p) ripple susceptibility of supply voltage (peak-to-peak value) fi = 80 MHz; note 4 20 − − mV fripple(p-p) frequency ripple (peak-to-peak value) from 20 Hz to 500 kHz; fi = 210 MHz 20 − − mV fdrift frequency drift without compensation: notes 5 and 6 − − 600 kHz 5 s to 15 min after switching on; without compensation: note 7 − − 200 kHz 1995 Mar 21 6 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners SYMBOL PARAMETER TDA5731M CONDITIONS MIN. TYP. MAX. UNIT Band B mixer (including IF amplifier); measurements using hybrid; note 8 fR frequency range 160 − 470 MHz N noise figure (not corrected for image) fi = 170 MHz − 8.0 10 dB fi = 470 MHz − 8.0 10 dB input impedance (Rs + Ls) fi = 160 to 470 MHz; see Fig.8 − 23 − Ω fi = 160 to 470 MHz; see Fig.8 − 10 − nH fN = 170 MHz; note 1 − −66 −60 dB ZI IP3 intermodulation using the 3 signal method Vi input voltage Gv voltage gain fN = 470 MHz; note 1 − −66 −60 dB fi = 470 MHz; 10 kHz pulling; in channel 83 87 − dBµV N + 5 − 1 MHz pulling; fi = 470 MHz; note 9 − 62 − dBµV fi = 170 MHz; note 2 31 34 37 dB fi = 470 MHz; note 2 31 34 37 dB Band B oscillator fR frequency range Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; Vtune = 0.45 to 28 V 205 − 490 MHz fshift frequency shift ∆VP = ±5%; note 3 − − 400 kHz χripple(p-p) ripple susceptibility of supply voltage (peak-to-peak value) fi = 205 MHz; note 8 20 − − mV fripple(p-p) frequency ripple (peak-to-peak value) from 20 Hz to 500 kHz; fi = 490 MHz 10 − − mV fdrift frequency drift without compensation; notes 5 and 6 − − 2 MHz 5 s to 15 min after switching on; without compensation; note 7 − − 300 kHz 430 − 860 MHz Band C mixer (including IF amplifier); measurements using hybrid; note 8 fR frequency range N noise figure (not corrected for image) fi = 430 MHz − 9 11 dB fi = 860 MHz − 9 11 dB ZI input impedance (Rs + Ls) fi = 430 MHz; see Fig.9 − 34 − Ω fi = 860 MHz; see Fig.9 − 45 − Ω fi = 430 to 860 MHz; see Fig.9 − 9 − nH fN = 430 MHz; note 1 − −66 −60 dB fN = 860 MHz; note 1 − −66 −60 dB 10 kHz pulling in channel; fi = 860 MHz; note 2 83 87 − dBµV N + 5 − 1 MHz pulling; fi = 860 MHz; note 9 − 61 − dBµV fi = 430 MHz; note 2 30 33 36 dB fi = 860 MHz; note 2 30 33 36 dB IP3 Vi Gv intermodulation using the 3 signal method input voltage voltage gain 1995 Mar 21 7 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners SYMBOL PARAMETER TDA5731M CONDITIONS MIN. TYP. MAX. UNIT Band C oscillator fR frequency range Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; Vtune = 0.45 to 28 V 485 − 900 MHz fshiift frequency shift ∆VP = ±5%; note 3 − − 400 kHz χripple(p-p) ripple susceptibility of supply voltage (peak-to-peak value) fi = 485 MHz; note 4 20 − − mV fripple(p-p) frequency ripple (peak-to-peak value) from 20 Hz to 500 kHz; fi = 900 MHz 10 − − mV fdrift frequency drift without compensation; notes 5 and 6 − − 2.5 MHz 5 s to 15 min after switching on; without compensation; note 7 − − 600 kHz fi = 80 MHz; see Fig.10 − 2.4 − mS fi = 80 MHz; see Fig.10 − 0.9 − pF fi = 900 MHz; see Fig.10 − 4.6 − mS fi = 900 MHz; see Fig.10 − 0.9 − pF LO output output admittance (GP//CP) YO Vo output voltage RL = 50 Ω; Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; 80 91 100 dBµV SRF spurious signal on LO output with respect to LO output signal RL = 50 Ω; Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; note 10 − − −10 dB HLO LO signal harmonics with respect to LO signal RL = 50 Ω; Tamb = −10 to +80 °C; VP = 4.5 to 5.5 V; − − −10 dB Notes 1. Cross modulation measurement is achieved using the 3 equal signals method (see Fig.4). 2. The gain is defined as the transducer gain (measured in Fig.8) plus the voltage transformation ratio of L7 to L8 (5 : 1, 15.4 dB). 3. The frequency shift is defined as a change in oscillator frequency for a variation of supply voltage. In one instance VP = 5 to 4.75 V and in the other instance VP = 5 to 5.25 V. In both cases, the frequency shift is below the specified value. 4. The frequency ripple susceptibility is measured at 500 kHz at the LO output (see Fig.5). The level of the ripple signal is increased until a difference of 53.5 dB is reached at the IF output. 5. The frequency drift is defined as the change in oscillator frequency for a variation of ambient temperature, on the one hand from Tamb = 25 °C to Tamb = 0 °C and on the other hand from Tamb = 25 °C to Tamb = 50 °C. 6. The capacitors in the oscillator circuits of Fig.8 are as follows: a) Band A: C1, C5 and C7. b) Band B: C4 and C9 and C11. c) Band C: C2, C3, C6, C8 and C10 are NP0 types. 7. Switching on drift is the change in oscillator frequency between 5 seconds and 15 minutes after switching on. 8. The values have been corrected for hybrid and cable losses. The symmetrical output impedance of the circuit is 100 Ω. 1995 Mar 21 8 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M 9. The input level of a N + 5 − 1 MHz signal which gives a signal 30 dB below the oscillator carrier at the LO output. 10. Measured at 50 Ω with the following RF input voltages; a) RF voltage level = 120 dBµV at fi < 180 MHz. b) RF voltage level = 107.5 dBµV at fi = 180 to 225 MHz. c) RF voltage level = 97 dBµV at fi = 225 to 860 MHz. I1 handbook, full pagewidth BNC I3 PCB C1 L1 BNC C2 plug plug I2 RIM-RIM PCB C3 RIM-RIM C4 (a) (b) (a) For fR = 50 MHz: mixer A frequency response measured = 57 MHz, loss = 0 dB image suppression = 16 dB C1 = 9 pF C2 = 15 pF L1 = 7 turns (∆ 5.5 mm, wire dia. = 0.5 mm) l1 = rigid cable (RIM): 5 cm long (rigid cable (RIM); 33 dB/100 m; 50 Ω, 96 pF/m). (b) For fR = 180 MHz: mixer A frequency response measured = 150.3 MHz, loss = 1.3 dB image suppression = 13 dB C3 = 5 pF C4 = 25 pF l2 = rigid cable (RIM): 30 cm long l3 = rigid cable (RIM): 5 cm long (rigid cable (RIM); 33 dB/100 m; 50 Ω; 96 pF/m). Fig.3 Input circuit for optimum noise figure. 1995 Mar 21 MBE286 - 1 9 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M 105 dBµV dbook, full pagewidth out of specification 66 dB specified within specification TDA5731 fn fn 1 0.5 MHz 1 MHz 0.5 MHz f IF 1 MHz MBE375 Fig.4 Cross modulation/incidental FM measurement. handbook, full pagewidth VP DC supply MBE376 6.8 kΩ 100 µF 100 µF ripple signal MEASUREMENT TEST CIRCUIT OF FIG. 14 to spectrum analyser 47 Ω 500 kHz Fig.5 Ripple susceptibility measurement. 1995 Mar 21 10 fo 500 kHz Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M handbook, full pagewidth 50 Ω 50 Ω 50 Ω 50 Ω 5V HYBRID ANZAC-183-4 5V 50 Ω output 50 Ω A HYBRID ANZAC-183-4 C18 B C to pre-stages L5 C16 C13 C12 15 C15 C14 20 19 18 17 R8 C20 C19 C17 16 14 R11 13 12 R10 11 C21 BAND A STAGE BAND C STAGE DC STABILIZER BAND B STAGE LOCAL OSCILLATOR AMPLIFIER ELECTRONIC BAND SWITCH MIXER MIXER MIXER BAND A OSCILLATOR BAND C OSCILLATOR BAND B OSCILLATOR 1 3 C5 C7 2 C6 4 6 C8 C10 TDA5731M 5 7 C9 C11 IF AMPLIFIER 8 9 10 C30 C22 D1 C23 D3 D2 L1 MBE377 C31 C3 L4 L3 L2 C1 C24 C4 L6 C2 MEASUREMENT NETWORK IF output R1 R2 R4 R6 R5 L7 50 Ω Vt R7 C28 C27 C26 C25 C29 Fig.6 Reference measurement set-up. 1995 Mar 21 11 spectrum analyser Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners Components values for Fig.8 Table 1 Table 2 Capacitors (all SMD and NP0 except C28) NUMBER TDA5731M Resistors (all SMD) NUMBER VALUE VALUE R1 47 kΩ R2 24 kΩ C1 82 pF R4 24 kΩ C2 5.6 pF R5 47 kΩ C3 100 pF R6 15 Ω C4 100 pF R7 10 kΩ C5 2.2 pF R8 100 Ω C6 1 pF R10 15 kΩ C7 2.2 pF R11 27 kΩ C8 1 pF C9 2.2 pF C10 2.2 pF C11 2.7 pF C12 1 nF C13 1 nF C14 1 nF C15 1 nF C16 1 nF C17 10 nF C18 10 nF C19 1 nF C20 1 nF Table 3 Diodes and coils NUMBER VALUE Diodes D1 BB132 D2 BB134 D3 BB133 Coils(1) L1 7.5 turns (3 mm) L2 2.5 turns (3.5 mm) L3 1.5 turns (2.5 mm) L4 1.5 turns (4 mm) L5 2.2 µH (choke coil) C21 1 nF C22 1 nF Note C23 1 nF 1. Wire size for L1 to L4 is 0.4 mm C24 18 pF C25 1 nF C26 1 nF C27 1 nF C28 150 nF C29 1 nF C30 3 pF C31 3 pF 1995 Mar 21 Transformers (L6 = 2 × 5 turns and L7 = 2 turns)) Coil type: TOKO 7kN; material: 113kN, screw core (03-0093), pot core (04-0026). 12 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M 1 handbook, full pagewidth 0.5 2 0.2 5 200 MHz 10 +j 0 40 MHz 0.2 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD517 Fig.7 Input admittance (S11) of the band A mixer input (40 to 200 MHz) (Y chart). 1 handbook, full pagewidth 0.5 2 470 MHz 0.2 5 10 170 MHz +j 0 0.2 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD518 Fig.8 Input impedance (S11) of the band B mixer input (170 to 470 MHz) (Z chart). 1995 Mar 21 13 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M 1 handbook, full pagewidth 0.5 2 860 MHz 0.2 5 430 MHz 10 +j 0.2 0 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD521 Fig.9 Input impedance (S11) of the band C mixer input (460 to 880 MHz) (Z chart). 1 handbook, full pagewidth 0.5 0.2 2 900 MHz 5 10 +j 80 MHz 0 0.2 0.5 1 2 5 ∞ 10 –j 10 5 0.2 2 0.5 1 MCD522 Fig.10 Output admittance (S22) of the IF amplifier (80 to 900 MHz) (Y chart). 1995 Mar 21 14 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M 1 handbook, full pagewidth 0.5 2 0.2 5 10 +j 0 –j 0.2 0.5 45 MHz 25 MHz 1 2 5 ∞ 10 10 5 0.2 2 0.5 1 MCD523 Fig.11 Output reflection coefficient (S22) of the LO amplifier (25 to 45 MHz) (Z chart). 1995 Mar 21 15 Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M PACKAGE OUTLINE SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm D SOT266-1 E A X c y HE v M A Z 11 20 Q A2 A (A 3) A1 pin 1 index θ Lp L 1 10 detail X w M bp e 0 2.5 5 mm scale DIMENSIONS (mm are the original dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y Z (1) θ mm 1.5 0.15 0 1.4 1.2 0.25 0.32 0.20 0.20 0.13 6.6 6.4 4.5 4.3 0.65 6.6 6.2 1.0 0.75 0.45 0.65 0.45 0.2 0.13 0.1 0.48 0.18 10 0o Note 1. Plastic or metal protrusions of 0.20 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 90-04-05 95-02-25 SOT266-1 1995 Mar 21 EUROPEAN PROJECTION 16 o Philips Semiconductors Product specification Low power VHF, UHF and hyperband mixer/oscillator for TV and VCR 3-band tuners TDA5731M applied to the substrate by screen printing, stencilling or pressure-syringe dispensing before device placement. SOLDERING Plastic small outline packages Several techniques exist for reflowing; for example, thermal conduction by heated belt, infrared, and vapour-phase reflow. Dwell times vary between 50 and 300 s according to method. Typical reflow temperatures range from 215 to 250 °C. BY WAVE During placement and before soldering, the component must be fixed with a droplet of adhesive. After curing the adhesive, the component can be soldered. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 min at 45 °C. Maximum permissible solder temperature is 260 °C, and maximum duration of package immersion in solder bath is 10 s, if allowed to cool to less than 150 °C within 6 s. Typical dwell time is 4 s at 250 °C. REPAIRING SOLDERED JOINTS (BY HAND-HELD SOLDERING IRON OR PULSE-HEATED SOLDER TOOL) Fix the component by first soldering two, diagonally opposite, end pins. Apply the heating tool to the flat part of the pin only. Contact time must be limited to 10 s at up to 300 °C. When using proper tools, all other pins can be soldered in one operation within 2 to 5 s at between 270 and 320 °C. (Pulse-heated soldering is not recommended for SO packages.) A modified wave soldering technique is recommended using two solder waves (dual-wave), in which a turbulent wave with high upward pressure is followed by a smooth laminar wave. Using a mildly-activated flux eliminates the need for removal of corrosive residues in most applications. For pulse-heated solder tool (resistance) soldering of VSO packages, solder is applied to the substrate by dipping or by an extra thick tin/lead plating before package placement. BY SOLDER PASTE REFLOW Reflow soldering requires the solder paste (a suspension of fine solder particles, flux and binding agent) to be DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Mar 21 17