Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next DataBulletin SheetI25188 ST733C..L SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AC (B-PUK) All diffused design 940A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers case style TO-200AC (B-PUK) Induction heating All types of force-commutated converters Major Ratings and Characteristics Parameters ST733C..L Units 940 A 55 °C 1900 A 25 °C @ 50Hz 20000 A @ 60Hz 20950 A @ 50Hz 2000 KA2s @ 60Hz 1820 KA2s 400 to 800 V 10 to 20 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM /V RRM tq range TJ To Order Previous Datasheet ST733C..L Series Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST733C..L 75 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 2200 2050 1900 1660 3580 3600 3100 3130 6800 3750 5920 3240 1000Hz 1370 1070 2900 2450 2120 1780 2500Hz 500 370 1220 980 960 770 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 10Ω / 0.47µF V DRM V DRM 50 V DRM 10Ω / 0.47µF A V 10Ω / 0.47µF On-state Conduction Parameter I T(AV) ST733C..L Max. average on-state current @ Heatsink temperature Units Conditions 940 (350) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 1900 DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 20000 t = 10ms No voltage non-repetitive surge current 20950 t = 8.3ms reapplied 16800 t = 10ms 100% VRRM 17600 t = 8.3ms reapplied Sinusoidal half wave, 2000 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 2 I t 2 Maximum I t for fusing A 1820 1410 KA2s 1290 I 2 √t Maximum I2√t for fusing 20000 KA2√s To Order t = 0.1 to 10ms, no voltage reapplied Previous Datasheet ST733C..L Series Index Next Data Sheet Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current To Order Fig. 8 - Maximum Non-repetitive Surge Current Previous ST733C..L SeriesDatasheet Index Next Data Sheet 1E 5 S T 73 3C..L S e rie s T ra p e zo id a l p uls e T C = 4 0°C d i/ d t = 50A / µs S nub b e r c ircuit R s = 1 0 o hm s C s = 0 .47 µF V D = 8 0% V DRM S nub b e r c irc uit R s = 10 o hm s C s = 0.47 µF V D = 80% V DRM ST 733C..L S e rie s T ra p e zo id a l p uls e T C = 55°C d i/ d t = 50A / µs tp 1E 4 1000 5 00 400 200 100 50 H z 1000 1 500 2000 25 00 3 000 1E 3 100 400 200 500 50 H z 1500 2000 2500 300 0 5000 1E 2 1E 1 1E 2 1E1E 4 1E 11 4 1E 1E3 1E 2 1E 3 1E 4 Pu ls e Ba s e wid th (µs) P uls e B a s e wid th (µs ) Fig. 14 - Frequency Characteristics 1E 5 S T 73 3C..L S e rie s T ra p e zo id a l p uls e T C = 4 0°C d i/ d t = 10 0A / µs S nub b e r c irc uit R s = 10 o hm s C s = 0 .47 µF V D = 8 0% V DRM S nub b e r c irc uit R s = 10 o hm s C s = 0.47 µF V D = 80% V DRM ST 733C..L S e rie s T ra p e zo id a l p uls e T C = 55°C d i/ d t = 100A/ µs tp 1E 4 5 00 1E 3 2 500 2 00 1 00 4 00 50 H z 100 50 H z 400 200 500 100 0 15 00 2 00 0 1000 1500 2000 2500 3 00 0 3000 5 00 0 1E 2 1E 1 1E 2 1E 3 1E14E 1E 4 1E 11 1E 2 P u ls e B a s e w id th (µ s ) 1E 3 1E 4 P uls e Ba s e wid th (µs ) Fig. 15 - Frequency Characteristics 1 E5 ST7 33 C ..L Se rie s Re c t a n g u la r p u lse ST7 33 C ..L Se rie s Sin u so id a l p u lse tp tp d i/ d t = 50 A / µ s 20 jo u le s p e r p u lse 1 E4 3 5 10 2 0 jo u le s p e r p u lse 5 2 3 1 1 E3 10 2 0.5 1 0.4 1 E2 0 .5 0.3 0 .4 0 .3 1 E1 1 E1 1 E2 1 E3 P u lse B a se w id t h ( µ s) 1 E1 1 E4 1 E41 E1 1 E2 1 E3 P u lse B a se w id t h ( µ s) Fig. 16 - Maximum On-state Energy Power Loss Characteristics 1 E4 To Order Previous Datasheet Index Next Data SheetSeries ST733C..L 100 R e cta ng ula r g ate p uls e a ) Re c o m m e nd e d lo a d line for rate d d i/ d t : 20V , 10ohm s ; tr<=1 µs b ) Re c o m m e nd e d lo a d line for <=30% ra te d d i/ d t : 10V , 10ohm s tr<=1 µs 10 (1) P GM = 10 W , tp (2) P GM = 20 W , tp (3) P GM = 40 W , tp (4) P GM = 60 W , tp = 20m s = 10m s = 5m s = 3.3m s (a ) (b ) 1 (1) (2) (3) (4) VGD IGD D e v ice : S T 733C..L S e rie s 0 .1 0.001 0.01 0.1 1 Ins tanta ne o us Ga te Curre nt (A) Fig. 17 - Gate Characteristics To Order F re q ue nc y Lim ite d b y P G (A V ) 10 100 Previous Datasheet Index Next Data SheetSeries ST733C..L Fig. 10 - Thermal Impedance ZthJC Characteristic Fig. 9 - On-state Voltage Drop Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics To Order Previous Datasheet Index Next ST733C..L Data SheetSeries On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage ST733C..L 1.63 rt2 V Low level value of forward IH High level value of forward slope resistance Maximum holding current IL Typical latching current (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.20 0.32 slope resistance Conditions ITM= 1700A, TJ = TJ max, tp = 10ms sine wave pulse 1.09 V T(TO)2 High level value of threshold voltage rt1 Units mΩ (I > π x IT(AV)), TJ = TJ max. 0.29 600 mA 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq ST733C..L Units Conditions 1000 A/µs TJ = TJ max, VDRM = rated VDRM, ITM = 2 x di/dt Typical delay time Max. turn-off time 1.5 Min Max 10 20 µs Gate pulse: 20V 20Ω, 10µs 0.5µs rise time TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 550A, commutating di/dt = -40A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST733C..L Units Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 75 mA ST733C..L Units TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions W TJ = TJ max., f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5 200 mA TJ = 25°C, VA = 12V, Ra = 6Ω 3 V IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied To Order Previous Datasheet ST733C..L Series Index Next Data Sheet Thermal and Mechanical Specification Parameter ST733C..L TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, DC operation single side cooled K/W 0.031 RthC-hs Max. thermal resistance, wt °C 0.073 junction to heatsink F Units Conditions 0.011 K/W case to heatsink 0.005 Mounting force, ± 10% 14700 N (1500) (Kg) 255 g Approximate weight Case style DC operation double side cooled DC operation single side cooled DC operation double side cooled TO - 200AC (B-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Units Conditions K/W TJ = TJ max. Single Side Double Side 180° 0.009 0.009 0.006 0.006 120° 0.011 0.011 0.011 0.011 90° 0.014 0.014 0.015 0.015 60° 0.020 0.021 0.021 0.022 30° 0.036 0.036 0.036 0.036 Ordering Information Table Device Code ST 73 3 C 08 L H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - L = Puk Case TO-200AC (B-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available dv/dt (V/µs) 20 10 CN 12 CM tq (µs) 15 CL 18 CP 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 20 CK 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 50 DN DM DL DP DK 100 EN EM EL EP EK * Standard part number. All other types available only on request. 10 - Critical dv/dt: None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) 200 -FM * FL * FP FK To Order 400 --HL HP H Previous Datasheet Index Next ST733C..L Data SheetSeries Outline Table 0.7 (0.03) MIN. 34 (1.34) DIA. MAX. 2 7 (1 .0 6 ) M AX . TWO PLACES PIN RECEPTACLE AMP. 60598-1 Case Style TO-200AC (B-PUK) 53 (2.09) DIA. MAX. 0.7 (0.03) MIN. All dimensions in millimeters (inches) 6.2 (0.24) MIN. 20°± 5° 5 8 .5 (2 .3 ) D IA . M AX . 4.7 (0.18) 36.5 (1.44) 2 HOLES DIA. 3.5 (0.14) x 2.5 (0.1) DEEP CREPAGE DISTANCE 36.33 (1.430) MIN. STRIKE DISTANCE 17.43 (0.686) MIN. Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics To Order