INFINEON BAS40-T1

BAS40
HiRel Silicon Schottky Diode
•
•
HiRel Discrete and Microwave
Semiconductor
General-purpose diodes for high-speed
switching
•
Circuit protection
•
Voltage clamping
•
High-level detecting and mixing
•
Hermetically sealed microwave package
•
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5512/020
Type Variant No. 03 (tbc.)
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type
BAS40-T1 (ql)
(ql) Quality Level:
Marking
-
Ordering Code
see below
Pin Configuration
1
2
Package
T1
P: Professional Quality,
Ordering Code:
Q62702A1176
H: High Rel Quality,
Ordering Code:
on request
S: Space Quality,
Ordering Code:
on request
(see order instructions for ordering example)
Semiconductor Group
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Draft B, September 99
BAS40
Maximum Ratings
Parameter
Symbol
Reverse Voltage
VR
40
V
IF
120
mA
IFSM
170
mA
Ptot
250
mW
Operating Temperature Range
Top
-55 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Tsol
+250
°C
Junction Temperature
Tj
150
°C
Thermal Resistance Junction-Case
Rth(j-c)
100
K/W
Forward Current
Surge Forward Current
Power Dissipation
1)
2)
Soldering Temperature
3)
Values
Unit
Electrical Characteristics
at TA=25°C; unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
IR1
-
-
10
µA
IR2
-
-
1
µA
VF1
0,29
0,33
0,39
V
VF2
0,42
0,45
0,54
V
VF3
0,68
0,7
0,85
V
RFD
7,5
10
11,5
Ω
CT
2,2
2,9
5,0
pF
DC Characteristics
Reverse Current 1
VR=40V
Reverse Current 2
VR=30V
Forward Voltage 1
IF1=1mA
Forward Voltage 2
IF2=10mA
Forward Voltage 3
IF3=40mA
Differential Forward Resistance
4)
IF=10mA, IF=15mA
AC Characteristics
Total Capacitance
VR=0V; f=1MHz
Notes.:
1.) t ≤ 10ms, Duty Cycle=10%
2.) At TCASE = 125 °C. For TCASE > 125 °C derating is required.
3.) During 5 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
∆VF
4.)
RFD=---------------5x10-3 A
Semiconductor Group
2 of 4
Draft B, September 99
BAS40
Order Instructions:
Full type variant including package variant and quality level must be specified by the orderer.
For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family
and quality level only.
Ordering Form:
Ordering Code: Q..........
BAS40- (x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702A1176
BAS40-T1 P
For BAS40 in T1 Package; Professional Quality Level
Further Informations:
See our WWW-Pages:
- Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.infineon.com/products/discrete/ hirel.htm
- HiRel Discrete and Microwave Semiconductors
www.infineon.com/products/discrete/hirel.htm
Please contact also our marketing division :
Tel.:
Fax.:
e-mail:
Address:
Semiconductor Group
++89 234 24480
++89 234 28438
[email protected]
Infineon Technologies Semiconductors,
High Frequency Products Marketing,
P.O.Box 801709,
D-81617 Munich
3 of 4
Draft B, September 99
BAS40
T1 Package
X1
B
Y1
A
Y2
Symbol
C
D
F
G
A
B
C
D
E
F
G
H
2
1
E
G
H
Millimetre
min
max
1,30
1,45
1,15
1,35
0,40
0,10
0,50
0,30
0,06
0,10
5,50
0,40
0,60
Published by Infineon Technologies Semiconductors,
High Frequency Products Marketing, P.O.Box 801709,
D-81617 Munich.
Infineon Technologies AG 1998. All Rights Reserved.
As far as patents or other rights of third parties are
concerned, liability is only assumed for components per
se, not for applications, processes and circuits
implemented within components or assemblies.
The information describes the type of component and shall
not be considered as assured characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery and prices please
contact the Offices of Semiconductor Group in Germany or
the
Infineon
Technologies
Companies
and
Representatives woldwide (see address list).
Due to technical requirements components may contain
dangerous substances. For information on the type in
question please contact your nearest Infineon
Technologies Office, Semiconductor Group.
Infineon Technologies Semiconductors is a certified CECC
and QS9000 manufacturer (this includes ISO 9000).
Semiconductor Group
4 of 4
Draft B, September 99