Order this document by 2N6394/D SEMICONDUCTOR TECHNICAL DATA Reverse Blocking Triode Thyristors Motorola preferred devices . . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supplies. SCRs 12 AMPERES RMS 50 thru 800 VOLTS • Glass Passivated Junctions with Center Gate Geometry for Greater Parameter Uniformity and Stability • Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability • Blocking Voltage to 800 Volts G K A CASE 221A-07 (TO-220AB) STYLE 3 *MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (Gate Open, TJ = –40 to 125°C) 2N6394 2N6395 2N6397 2N6398 2N6399 RMS On–State Current (TC = 90°C) (All Conduction Angles) Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 125°C) Circuit Fusing (t = 8.3 ms) Forward Peak Power Forward Average Gate Power Forward Peak Gate Current Operating Junction Temperature Range Storage Temperature Range Symbol Value VDRM, VRRM Unit Volts 50 100 400 600 800 IT(RMS) 12 Amps ITSM 100 Amps I2t 40 A2s PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +150 °C Symbol Max Unit RθJC 2 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case *Indicates JEDEC Registered Data. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Preferred devices are Motorola recommended choices for future use and best overall value. REV 1 Motorola Thyristor Device Data Motorola, Inc. 1999 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Characteristic * Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) TJ = 25°C TJ = 125°C Min Typ Max Unit — — — — 10 2 µA mA IDRM, IRRM * Forward “On” Voltage (ITM = 24 A Peak) VTM — 1.7 2.2 Volts * Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) IGT — 5 30 mA * Gate Trigger Voltage (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) (VD = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGT VGD — 0.2 0.7 — 1.5 — Volts * Holding Current (VD = 12 Vdc, Gate Open) IH — 6 40 mA Turn-On Time (ITM = 12 A, IGT = 40 mAdc, VD = Rated VDRM) tgt — 1 2 µs Turn-Off Time (VD = Rated VDRM) (ITM = 12 A, IR = 12 A) (ITM = 12 A, IR = 12 A, TJ = 125°C) tq — — 15 35 — — — 50 — Critical Rate–of–Rise of Off-State Voltage Exponential (VD = Rated VDRM, TJ = 125°C) µs dv/dt V/µs 2 FIGURE 1 — CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION 20 130 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM ALLOWABLE CASE TEMPERATURE (° C) *Indicates JEDEC Registered Data. 125 α 120 α = CONDUCTION ANGLE 115 110 105 dc 100 α = 30° 95 60° 90° 90 0 1.0 α α = CONDUCTION ANGLE 16 14 12 α = 30° 10 180° dc 90° 60° 8.0 6.0 TJ ≈ 125°C 4.0 2.0 0 180° 7.0 2.0 3.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 18 8.0 0 1.0 2.0 3.0 7.0 4.0 5.0 6.0 IT(AV), AVERAGE ON-STATE CURRENT (AMPS) 8.0 Motorola Thyristor Device Data FIGURE 3 — ON–STATE CHARACTERISTICS FIGURE 4 — MAXIMUM NON-REPETITIVE SURGE CURRENT 100 100 I TSM , PEAK SURGE CURRENT (AMP) TJ = 25°C 70 125°C 50 30 i TM , INSTANTANEOUS ON–STATE CURRENT (AMPS) 20 10 7.0 1 CYCLE 95 90 85 80 75 70 TJ = 125°C f = 60 Hz 65 60 SURGE IS PRECEDED AND FOLLOWED BY RATED CURRENT 55 50 1.0 5.0 2.0 3.0 4.0 6.0 8.0 10 NUMBER OF CYCLES 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.4 1.2 2.0 2.8 3.6 4.4 5.2 vTH, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS) 6.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 5 — THERMAL RESPONSE 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 Motorola Thyristor Device Data 2.0 3.0 5.0 10 20 30 50 t, TIME (ms) 100 200 300 500 1.0 k 2.0 k 3.0 k 5.0 k 10 k 3 TYPICAL CHARACTERISTICS FIGURE 7 — GATE TRIGGER CURRENT IGTM , PEAK GATE CURRENT (mA) 300 200 I GT, GATE TRIGGER CURRENT (NORMALIZED) FIGURE 6 — PULSE TRIGGER CURRENT OFF-STATE VOLTAGE = 12 V 100 70 50 30 20 TJ = –40°C 25°C 10 7.0 5.0 100°C 3.0 0.2 0.5 1.0 2.0 5.0 10 20 PULSE WIDTH (ms) 50 100 200 3.0 OFF-STATE VOLTAGE = 12 V 2.0 1.0 0.7 0.5 0.3 –40 –20 FIGURE 8 — GATE TRIGGER VOLTAGE 20 40 60 80 100 120 TJ, JUNCTION TEMPERATURE (°C) 140 160 FIGURE 9 — HOLDING CURRENT 1.1 30 OFF-STATE VOLTAGE = 12 V OFF-STATE VOLTAGE = 12 V 1.0 IH , HOLDING CURRENT (mA) VGT, GATE TRIGGER VOLTAGE (VOLTS) 0 0.9 0.8 0.7 0.6 20 10 7.0 5.0 0.5 0.4 –60 –40 3.0 –20 0 20 40 60 80 TJ, JUNCTION TEMPERATURE (°C) 4 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140 TJ, JUNCTION TEMPERATURE (°C) Motorola Thyristor Device Data PACKAGE DIMENSIONS –T– B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 D STYLE 3: PIN 1. 2. 3. 4. N CATHODE ANODE GATE ANODE CASE 221A–07 ISSUE Z Motorola Thyristor Device Data 5 Motorola reserves the right to make changes without further notice to any products herein. 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