Order this document by MRFIC0912/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line ! Designed primarily for use in high efficiency Analog Cellular applications, the MRFIC0912 is a two–stage power amplifier in Motorola’s proprietary Power Flat Pack 16–lead package. This integrated circuit requires minimal off-chip matching while allowing for the maximum in flexibility in optimizing gain and efficiency. The design employs Motorola’s planar, self–aligned GaAs MESFET IC process to give the highest efficiency possible. 900 MHz GaAs INTEGRATED POWER AMPLIFIER • Usable Frequency Range = 800 – 1000 MHz, Specified for 824 – 905 MHz • 30.8 dBm Minimum Output Power • 470 mA Maximum Supply Current at 30.8 dBm Output • 23.8 dB Minimum Gain • Simple Off–chip Matching for Maximum Power/Efficiency Flexibility • 4.6 Volt Supply • 45 dB/Volt Typical Power Output Control • Order MRFIC0912R2 for Tape and Reel Option. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel. CASE 978–02 (PFP–16) • Device Marking = M0912 GND 1 16 N/C VG2 2 15 N/C N/C 3 14 N/C VD1 4 13 RF OUT/VD2 N/C 5 12 RF OUT/VD2 VG1 6 11 RF OUT/VD2 RF IN 7 10 N/C N/C 8 9 GND Pin Connections and Functional Block Diagram REV 1 Motorola, Inc. 1997 MOTOROLA RF DEVICE DATA MRFIC0912 1 MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Ratings Supply Voltage Symbol Limit Unit VD1, VD2 8 Vdc RF Input Power PRF 20 dBm VG1, VG2, VGG –5 Vdc Storage Temperature Range Tstg – 65 to +150 °C Operating Case Temperature TC – 35 to +100 °C RθJC 18 °C/W Symbol Value Unit RF Frequency fRF 824–905 MHz Supply Voltage VD1, VD2 4.0–6.0 Vdc Gate Voltage VG1, VG2 –2.3 to –1.5 Vdc Gate Voltage Thermal Resistance, Junction to Case RECOMMENDED OPERATING RANGES Parameter ELECTRICAL CHARACTERISTICS (VD1, VD2 = 4.6 V, TA = 25°C, fRF = 840 MHz, Pin = 7 dBm, VGG set for ID2Q = 200 mA, Tested in Circuit Shown in Figure 1) Characteristic Min Typ Max Unit RF Output Power 30.8 31.2 — dBm Power Slump (VD1, VD2 = 4.0 V, TC = 100_C) 28.5 — — dBm dBc Load Mismatch Survival (VD1, VD2 = 7 V, Load VSWR = 10:1, all phases, 10 sec) No Degradation Spurious Output (VD1,VD2 = 0 to 7 V, Pin = 5 to 9 dBm, Load VSWR = 10:1) — — –60 Input Return Loss — 10 — Harmonic Output (Pout = 30.8 dBm) 2f0 3f0 4f0 — — — Noise Power (VDD = 0 to 7 V, 45 MHz Above fRF at 30 kHz BW) Maximum Power Control Voltage Slope (Change in Pout for Change on VD1) Total Supply Current (VD1 set for Pout = 30.8 dBm) dB dBc — — — –25 –40 –40 — — –93 dBm — 45 — dB/V — 430 470 mA VGG Required for ID2Q = 200 mA –2.3 –2.0 –1.7 Vdc Gate Current during RF Operation –2 — 2 mA DESIGN AND APPLICATIONS INFORMATION The MRFIC0912 has been designed for high efficiency 900 MHz applications such as analog cellular and Industrial, Medical and Scientific (ISM) equipment. The two stage MESFET design utilizes Motorola’s planar refractory gate process to allow high performance GaAs to be applied to consumer applications. The proprietary PFP–16 package assures good grounding and low thermal resistance. As shown in Figure 1, the gate voltage pins can be ganged together and one voltage applied to both gates to set the quiescent operating current. Alternatively, VG1 and VG2 can be set separately. VD1 can be used as power control with a 45 dB per volt sensitivity. The placement of C3 in the VD1 supply line can be varied to optimize RF performance since T2 is part of a shunt L matching section. On the output, pins MRFIC0912 2 11, 12 and 13, the placement of C11 is adjusted for best RF performance. Layout is important for amplifier stability and RF performance. Ground vias must be located as close to circuit ground connections as possible. Power supply bypassing C3, C6, C9, and C10 must be included to reduce out–of– band gain and prevent spurious output. Evaluation Boards Evaluation boards are available for RF Monolithic Integrated Circuits by adding a “TF” suffix to the device type. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. MOTOROLA RF DEVICE DATA VGG C5 1 16 2 15 VG2 3 14 4 13 5 12 6 11 7 10 8 9 T2 C6 C3 L2 VD1 RF OUT T1 C8 C11 VG1 C4 L1 C2 C10 VD2 R1 RF IN C9 C1 C6 C10 C4, C5 L1 R1 1 kΩ C1 3.3 pF C2, C3, C8, C9 100 pF C11 8.2 pF 0.01 µF 1 µF 1000 pF 10 nH L2 22 nH T1 50 Ω, 13° @ 840 MHz T2 50 Ω, 8° @ 840 MHz BOARD MATERIAL — GLASS/EPOXY, εr = 4.45, THICKNESS = 18 MIL Figure 1. Applications Circuit Configuration TYPICAL CHARACTERISTICS 35 35 Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) VDD = 5.8 V 30 VDD = 4.0 V VDD = 4.6 V 25 20 T = 25°C 30 85°C 25 20 – 35°C f = 837 MHz TEMP = 25°C 15 –10 –5 0 Pin, INPUT POWER (dBm) 5 Figure 2. Output Power versus Input Power MOTOROLA RF DEVICE DATA VDD = 4.6 V f = 837 MHz 10 15 –10 –5 0 Pin, INPUT POWER (dBm) 5 10 Figure 3. Output Power versus Input Power MRFIC0912 3 TYPICAL CHARACTERISTICS 35 35 25 T = 25°C VDD = 4.6 V Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) VDD = 5.8 V VDD = 4.0 V 15 5 f = 837 MHz Pin = 7.0 dBm TEMP = 25°C –5 1 0 3 2 4 Vcntrl, CONTROL VOLTAGE (VOLTS) 5 85°C 25 5 –5 6 – 35°C 15 VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm 0 Figure 4. Output Power versus Control Voltage 5 70 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 2 3 4 Vcntrl, CONTROL VOLTAGE (VOLTS) Figure 5. Output Power versus Control Voltage 70 60 50 VDD = 4.0 V 40 30 VDD = 4.6 V 20 10 f = 837 MHz TEMP = 25°C VDD = 5.8 V 0 –10 –5 0 5 T = 25°C 60 85°C 50 40 30 – 35°C 20 VDD = 4.6 V f = 837 MHz 10 0 –10 10 –5 0 5 10 Pin, INPUT POWER (dBm) Pin, INPUT POWER (dBm) Figure 6. Power Added Efficiency versus Input Power Figure 7. Power Added Efficiency versus Input Power 70 PAE, POWER ADDED EFFICIENCY (%) 70 PAE, POWER ADDED EFFICIENCY (%) 1 60 VDD = 4.0 V 50 40 VDD = 4.6 V 30 VDD = 5.8 V 20 10 f = 837 MHz Pin = 7.0 dBm TEMP = 25°C T = 25°C 60 85°C 50 40 – 35°C 30 20 VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm 10 0 0 0 1 2 3 4 Vcntrl, CONTROL VOLTAGE (VOLTS) 5 Figure 8. Power Added Efficiency versus Control Voltage MRFIC0912 4 6 0 1 2 3 4 Vcntrl, CONTROL VOLTAGE (VOLTS) Figure 9. Power Added Efficiency versus Control Voltage MOTOROLA RF DEVICE DATA 5 TYPICAL CHARACTERISTICS 34 31.8 VDD = 5.8 V Pout , OUTPUT POWER (dBm) Pout , OUTPUT POWER (dBm) 31.6 33 32 VDD = 4.6 V 31 VDD = 4.0 V 30 29 825 830 835 840 f, FREQUENCY (MHz) 30.8 Figure 10. Output Power versus Frequency 830 835 840 f, FREQUENCY (MHz) 845 850 63 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 85°C VDD = 4.6 V Pin = 7.0 dBm Figure 11. Output Power versus Frequency 62 VDD = 4.6 V 61 VDD = 4.0 V 60 T = 25°C 31 30.4 825 850 845 31.2 30.6 Pin = 7.0 dBm TEMP = 25°C – 35°C 31.4 VDD = 5.8 V 59 825 Pin = 7.0 dBm TEMP = 25°C 830 840 835 61 T = 25°C 59 85°C 57 VDD = 4.6 V Pin = 7.0 dBm 55 825 850 845 – 35°C 830 835 840 845 f, FREQUENCY (MHz) f, FREQUENCY (MHz) Figure 12. Power Added Efficiency versus Frequency Figure 13. Power Added Efficiency versus Frequency 850 450 I D1 , I D2 , DRAIN CURRENT (mA) 400 350 ID2 300 250 200 VDD = 4.6 V f = 837 MHz Pin = 7.0 dBm 150 100 ID1 50 0 0 1 2 3 4 Vcntrl, CONTROL VOLTAGE (VOLTS) 5 Figure 14. Drain Current versus Control Voltage MOTOROLA RF DEVICE DATA MRFIC0912 5 PACKAGE DIMENSIONS h X 45 _ A E2 1 14 x e 16 D e/2 D1 8 9 E1 8X bbb M B BOTTOM VIEW E C B ÉÉ ÇÇÇ ÇÇÇ ÉÉ ÇÇÇ S H b1 DATUM PLANE c A A2 c1 b aaa DETAIL Y SEATING PLANE C A SECT W–W L1 C M q ccc C W GAUGE PLANE DIM A A1 A2 D D1 E E1 E2 L L1 b b1 c c1 e h q W L S NOTES: 1. CONTROLLING DIMENSION: MILLIMETER. 2. DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE –H– IS LOCATED AT BOTTOM OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE BOTTOM OF THE PARTING LINE. 4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS 0.250 PER SIDE. DIMENSIONS D AND E1 DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE –H–. 5. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION IS 0.127 TOTAL IN EXCESS OF THE b DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS –A– AND –B– TO BE DETERMINED AT DATUM PLANE –H–. aaa bbb ccc A1 MILLIMETERS MIN MAX 2.000 2.350 0.025 0.152 1.950 2.100 6.950 7.100 4.372 5.180 8.850 9.150 6.950 7.100 4.372 5.180 0.466 0.720 0.250 BSC 0.300 0.432 0.300 0.375 0.180 0.279 0.180 0.230 0.800 BSC ––– 0.600 0_ 7_ 0.200 0.200 0.100 1.000 0.039 DETAIL Y CASE 978–02 ISSUE A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRFIC0912 6 ◊ MRFIC0912/D MOTOROLA RF DEVICE DATA