Order this document by MRF658/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 12.5 Volt UHF large–signal, common emitter, class–C amplifier applications in industrial and commercial FM equipment operating to 520 MHz. • Specified 12.5 Volt, 512 MHz Characteristics Output Power = 65 Watts Minimum Gain = 4.15 dB Minimum Efficiency = 50% 65 W, 512 MHz RF POWER TRANSISTOR NPN SILICON • Characterized with Series Equivalent Large–Signal Impedance Parameters from 400 to 520 MHz • Built–In Matching Network for Broadband Operation • Triple Ion Implanted for More Consistent Characteristics • Implanted Emitter Ballast Resistors for Improved Ruggedness • Silicon Nitride Passivated • Capable of Surviving Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 15.5 Vdc and 2.0 dB Overdrive CASE 316–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 16.5 Vdc Collector–Emitter Voltage VCES 38 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 15 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 175 1.0 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 1.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 16.5 29 — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 38 45 — Vdc Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 4.0 4.6 — Vdc ICES — 0.1 10 mAdc OFF CHARACTERISTICS Collector Cutoff Current (VCE = 15 Vdc, VBE = 0, TC = 25°C) (continued) REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF658 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit hFE 40 85 120 — Cob — 170 220 pF Pout 65 — — W Collector Efficiency (VCC = 12.5 Vdc, Pout = 65 W, f = 470 & 512 MHz) η 50 60 — % Output Mismatch Stress (VCC = 15.5 Vdc, Pin = 32 W, f = 512 MHz, VSWR 20:1, All Phase Angles) ψ ON CHARACTERISTICS DC Current Gain (IC = 10 Adc, VCE = 5.0 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture. See Figure 1.) Output Power (VCC = 12.5 Vdc, Pin = 25 W, f = 470 & 512 MHz) B1 DELTA VRE PORT (NORMALLY SHORTED) C13 10 µF No Degradation in Output Power B3 B2 + 12.5 Vdc B4 C15 C14 0.18 µF C16 C17 C18 C19 0.18 µF L2 L1 + C20 10 µF SOCKET L3 C3 RF INPUT D.U.T. C1 C5 C7 C6 C8 RF OUTPUT C12 N1 N2 C2 C4 C11 B1–B4 — Long Bead, Fair Rite (2743019446) C1 — 56 pF, Chip Capacitor, Murata Erie C2 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200 C3 — 39 pF, Chip Capacitor, Murata Erie C4 — 1–20 pF Trimmer, Johanson–JMC 5501 C5 — 33 pF, Miniature Clamped Mica, SAHA C6 — 33 pF, Miniature Clamped Mica, SAHA C7 — 33 pF, Miniature Clamped Mica, SAHA C8 — 27 pF, Miniature Clamped Mica, SAHA C11 — 1–20 pF Trimmer, Johanson–JMC 5501 PG26J200 C12 — 110 pF, Chip Capacitor, Murata Erie C13 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R C14 — 0.18 µF Chip Capacitor C15 — 130 pF, Chip Capacitor, Murata Erie LOAD % = 50 OHMS C16 — 130 pF, Chip Capacitor, Murata Erie C17 — 130 pF, Chip Capacitor, Murata Erie C18 — 130 pF, Chip Capacitor, Murata Erie C19 — 0.18 µF Chip Capacitor C20 — 10 µF, 50 V Electrolytic, Panasonic–ECEV1HV100R Board — 1/16″ Glass Teflon, εr = 2.55, Keene (GX–0600–55–22) L1, L2 — 5 Turns, 20 AWG, ID 0.126″ L3 — 2 Turns, 26 AWG, ID 0.073″ N1, N2 — Type N Flange, Omni Spectra (3052–1648–10) Murata Erie Chip Capacitors — GRH710COGxxxx100VBE SAHA Mini Clamped Mica Capacitors — 3HS0006–xx Figure 1. 512 MHz Test Circuit MRF658 2 MOTOROLA RF DEVICE DATA 110 470 POUT, OUTPUT POWER (WATTS) POUT, OUTPUT POWER (WATTS) 100 f = 440 MHz 100 90 512 80 70 60 50 40 30 VCC = 12.5 Vdc 20 10 5 10 15 20 25 30 35 90 PIN = 30 W 80 25 W 70 20 W 60 15 W 50 40 10 W 30 VCC = 12.5 Vdc 20 10 300 400 410 420 430 440 450 460 470 480 490 500 510 520 530 40 PIN, INPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Frequency 120 POUT, OUTPUT POWER (WATTS) 110 f = 512 MHz 100 30 W PIN = 35 W 25 W 90 20 W 80 70 60 15 W 50 10 W 40 30 20 10 7 8 9 10 11 12 13 14 15 16 17 VCC, SUPPLY VOLTAGE (VOLTS) Figure 4. Output Power versus Supply Voltage MOTOROLA RF DEVICE DATA MRF658 3 +j10 +j5 +j20 +j30 520 +j2 460 f = 400 MHz ZIN +j50 Zo = 10 Ω +j100 2 0 5 10 20 30 50 VCC = 12.5 V Po = 70 W f MHz ZIN OHMS ZOL* OHMS 400 0.62 + j2.8 1.20 + j2.5 440 0.72 + j3.1 1.10 + j2.8 480 0.81 + j3.3 0.94 + j3.1 520 0.90 + j3.6 0.80 + j3.4 +j10 +j5 +j20 +j30 520 460 +j2 ZOL* f = 400 MHz +j50 Zo = 10 Ω +j100 0 2 5 10 20 30 50 ZOL* = Conjugate of optimum load impedance into ZOL* = which the device operates at a given output ZOL* = power, voltage and frequency. Figure 5. Series Equivalent Input and Output Impedances MRF658 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS F D 4 R NOTES: 1. FLANGE IS ISOLATED IN ALL STYLES. K 3 1 Q 2 L B J C E N H A U STYLE 1: PIN 1. 2. 3. 4. DIM A B C D E F H J K L N Q R U INCHES MIN MAX 24.38 25.14 12.45 12.95 5.97 7.62 5.33 5.58 2.16 3.04 5.08 5.33 18.29 18.54 0.10 0.15 10.29 11.17 3.81 4.06 3.81 4.31 2.92 3.30 3.05 3.30 11.94 12.57 MILLIMETERS MIN MAX 0.960 0.990 0.490 0.510 0.235 0.300 0.210 0.220 0.085 0.120 0.200 0.210 0.720 0.730 0.004 0.006 0.405 0.440 0.150 0.160 0.150 0.170 0.115 0.130 0.120 0.130 0.470 0.495 EMITTER COLLECTOR EMITTER BASE CASE 316–01 ISSUE D MOTOROLA RF DEVICE DATA MRF658 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF658 6 ◊ *MRF658/D* MRF658/D MOTOROLA RF DEVICE DATA