MOTOROLA MPSW92

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by MPSW92/D
SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
Motorola Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–300
Vdc
Collector – Base Voltage
VCBO
–300
Vdc
Emitter – Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
1.0
8.0
Watt
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
2.5
20
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
Operating and Storage Junction
Temperature Range
2
3
CASE 29–05, STYLE 1
TO–92 (TO–226AE)
THERMAL CHARACTERISTICS
Characteristic
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Max
Unit
Collector – Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–300
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 µAdc, IE = 0)
V(BR)CBO
–300
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 µAdc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
ICBO
—
–0.25
µAdc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
µAdc
Characteristic
OFF CHARACTERISTICS
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
MPSW92
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
25
40
25
—
—
—
Unit
ON CHARACTERISTICS(1)
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.5
Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
—
–0.9
Vdc
fT
50
—
MHz
Ccb
—
6.0
pF
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
TJ = 125°C
VCE = –10 V
h FE, DC CURRENT GAIN
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
200
25°C
100
–55°C
70
50
30
20
–1.0
2
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
–0.7
IC = –20 mA
–0.6
TJ = 25°C
IC = –30 mA
–0.5
–0.4
–0.3
IC = –10 mA
–0.2
–0.1
0
–0.1 –0.2
–0.5
–1.0 –2.0
–5.0
–10
–20 –30
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MPSW92
R qV, TEMPERATURE COEFFICIENTS (mV/°C)
–1.4
–1.2
–1.0
–0.8
–0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
–0.4
–0.2
0
–1.0
–2.0 –3.0
–5.0 –7.0 –10
VCE(sat) @ IC/IB = 5.0
–20 –30
–50 –70 –100
25°C TO 125°C
1.5
1.0
RqVC FOR VCE(sat)
0.5
–55°C TO 25°C
0
–0.5
–1.0
–55°C TO 125°C
–1.5
RqVB FOR VBE
–2.0
–2.5
–1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
IC, COLLECTOR CURRENT (mA)
Figure 3. “ON” Voltages
Figure 4. Temperature Coefficients
Ceb
TJ = 25°C
30
20
10
7.0
5.0
Ccb
3.0
2.0
1.0
–0.2
IC/IB = 10
2.0
IC, COLLECTOR CURRENT (mA)
100
70
50
C, CAPACITANCE (pF)
5.0
VCE(sat) @ IC/IB = 10
f T, CURRENT–GAIN – BANDWIDTH PRODUCT (MHz)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.5
–0.5 –1.0
–2.0
–5.0 –10
–20
–50 –100 –200
100
70
50
TJ = 25°C
VCE = –20 V
f = 20 MHz
30
20
10
–1.0
–2.0 –3.0
–5.0 –7.0 –10
–20 –30
–50 –70 –100
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current–Gain — Bandwidth Product
IC , COLLECTOR CURRENT (mA)
–1 k
–500
100 ms
–200
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN
LIMIT
1.0 s
–100
1.0 ms
–50
–20
TA = 25°C
MPSW92
TC = 25°C
DUTY CYCLE ≤ 10%
–10
–10
–20
–50
–100
–200 –300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Active Region Safe Operating Area
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MPSW92
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
P
L
F
K
X X
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
G
H
J
V
1 2 3
N C
SECTION X–X
N
CASE 029–05
(TO–226AE)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.290
0.310
0.125
0.165
0.018
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.018
0.024
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.135
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.44
5.21
7.37
7.87
3.18
4.19
0.46
0.56
0.41
0.48
1.15
1.39
2.42
2.66
0.46
0.61
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
3.43
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
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4
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*MPSW92/D*
MPSW92/D
Motorola Small–Signal Transistors, FETs and Diodes Device
Data