IRF IRF7478

PD- 94055A
IRF7478
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High frequency DC-DC converters
VDSS
l
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
Ω)
RDS(on) max (mΩ)
ID
[email protected] = 10V
4.2A
[email protected] = 4.5V
3.5A
60V
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation„
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt †
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient „
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes  through † are on page 8
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1
3/13/01
IRF7478
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.065
20
23
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V GS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
26
VGS = 10V, ID = 4.2A ƒ
mΩ
30
VGS = 4.5V, ID = 3.5A ƒ
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 48V, VGS = 0V
µA
100
VDS = 48V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Symbol
EAS
IAR
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
4.3
9.6
7.7
2.6
44
13
1740
300
37
1590
220
410
Max. Units
Conditions
–––
S
VDS = 50V, ID = 4.2A
31
ID = 4.2A
–––
nC
VDS = 48V
–––
VGS = 4.5V
–––
VDD = 30V
–––
ID = 4.2A
ns
–––
RG = 6.2Ω
–––
VGS = 10V ƒ
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 48V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 48V …
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
Max.
Units
–––
–––
140
4.2
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
56
–––
–––
–––
–––
52
100
1.3
78
150
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 4.2A, VGS = 0V
TJ = 25°C, I F = 4.2A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF7478
100
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
10
2.7V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
ID , Drain-to-Source Current (Α )
T J = 150°C
10
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
3.0
3.5
Fig 3. Typical Transfer Characteristics
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1
10
100
Fig 2. Typical Output Characteristics
100
VGS, Gate-to-Source Voltage (V)
20µs PULSE WIDTH
TJ = 150 °C
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
2.7V
1
0.1
100
VDS , Drain-to-Source Voltage (V)
2.5
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
4.0
ID = 7.0A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7478
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1000
Coss
100
Crss
1
10
ID = 4.2A
VDS = 48V
VDS = 30V
VDS = 12V
8
6
4
2
10
0
100
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
100
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
C, Capacitance(pF)
10000
10
VGS , Gate-to-Source Voltage (V)
100000
10
1
TJ = 25 ° C
0.1
0.2
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100us
1ms
1
V GS = 0 V
0.6
10us
2.2
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
0.1
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7478
8.0
VDS
VGS
I D , Drain Current (A)
6.0
RD
D.U.T.
RG
+
-VDD
10V
4.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R DS(on) , Drain-to -Source On Resistance ( Ω )
IRF7478
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.028
0.026
0.024
VGS = 4.5V
0.022
0.020
0.018
VGS = 10V
0.016
0
10
20
30
40
50
0.04
0.03
ID = 7.0A
0.02
0.01
0.0
60
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
QGD
400
+
V
- DS
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
BOTTOM
ID
1.9A
3.4A
4.2A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7478
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0 .2 5 (.0 1 0 )
4
M
A M
θ
e1
K x 4 5°
-C -
0 .1 0 (.0 0 4 )
B 8X
0 .2 5 (.0 1 0 )
A1
L
8X
6
C
8X
M C A S B S
NOTES:
1 . D IM E N S IO N IN G A N D T O L E R A N C IN G P E R A N S I Y 1 4 .5 M -1 9 8 2 .
2 . C O N T R O L L IN G D IM E N S IO N : IN C H .
3 . D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
4 . O U T L IN E C O N F O R M S T O J E D E C O U T L IN E M S -0 1 2 A A .
5 D IM E N S IO N D O E S N O T IN C L U D E M O L D P R O T R U S IO N S
M O L D P R O T R U S IO N S N O T T O E X C E E D 0 .2 5 (.0 0 6 ).
6 D IM E N S IO N S IS T H E L E N G T H O F L E A D F O R S O L D E R IN G T O A S U B S T R A T E ..
M IN
M AX
.05 32
.06 88
1.3 5
1.75
.00 40
.00 98
0.1 0
0.25
B
.01 4
.01 8
0.3 6
0.46
C
.00 75
.009 8
0.19
0.25
D
.18 9
.196
4.80
4.98
E
.15 0
.15 7
3.8 1
3.99
e1
A
M ILLIM E T E R S
M AX
A1
e
θ
IN C H E S
M IN
.05 0 B A S IC
1.27 B A S IC
.02 5 B A S IC
0 .635 B A S IC
H
.22 84
.244 0
K
.01 1
.01 9
0.2 8
5.8 0
0.48
6.20
L
0.16
.05 0
0.4 1
1.27
θ
0°
8°
0°
8°
R E C O M M E N D E D F O O T P R IN T
0 .7 2 (.0 2 8 )
8X
6 .4 6 ( .2 5 5 )
1 .7 8 (.0 7 0 )
8X
1 .2 7 ( .0 5 0 )
3X
SO-8 Part Marking
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7
IRF7478
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 16mH
„ When mounted on 1 inch square copper board
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 4.2A.
ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.
† ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
8
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