PD-91490C
IRFP3710
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 100V
RDS(on) = 0.025W
G
Description
ID = 57A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
57
40
180
200
1.3
± 20
530
28
20
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RqJC
RqCS
RqJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.75
–––
40
°C/W
1
IRFP3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
100
–––
–––
2.0
20
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
14
59
58
48
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
3000
640
330
V(BR)DSS
DV(BR)DSS/DTJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.025
W
VGS = 10V, ID = 28A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 25V, ID = 28A
25
VDS = 100V, VGS = 0V
µA
250
VDS = 80V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
190
ID = 28A
26
nC VDS = 80V
82
VGS = 1.7V, See Fig. 6 and 13
–––
VDD = 50V
–––
ID = 28A
ns
–––
RG = 2.5W
–––
RD = 1.7W, See Fig. 10
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 57
showing the
A
G
integral reverse
––– ––– 180
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 28A, VGS = 0V
––– 210 320
ns
TJ = 25°C, IF = 28A
––– 1.7 2.6
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 1.4mH
Pulse width £ 300µs; duty cycle £ 2%.
Uses IRF3710 data and test conditions
RG = 25W , IAS = 28A. (See Figure 12)
ISD £ 28A, di/dt £ 460A/µs, VDD £ V(BR)DSS,
TJ £ 175°C
2
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IRFP3710
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
100
10
4.5V
20µ s P U LS E W ID TH
TC = 25°C
1
0.1
1
10
A
4.5V
10
100
3.0
R D S (on) , D rain-to-S ource O n R esistance
(N orm alized)
T J = 2 5 °C
100
T J = 1 7 5 °C
10
VDS = 50V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
V G S , G a te -to -S o u rce V o lta g e (V )
Fig 3. Typical Transfer Characteristics
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10
A
100
Fig 2. Typical Output Characteristics
1000
4
1
V D S , D rain-to-S ource V oltage (V )
Fig 1. Typical Output Characteristics
1
20µ s P U LS E W ID TH
T C = 175°C
1
0.1
V D S , D rain-to-S ource V oltage (V )
I D , D ra in -to-S o urc e C urren t (A )
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
I , D rain-to-S ource C urrent (A )
D
I , D rain-to-S ource C urrent (A )
D
TOP
10
A
I D = 46A
2.5
2.0
1.5
1.0
0.5
V G S = 10V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T em perature (°C )
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP3710
V GS
C iss
C rss
C oss
5000
=
=
=
=
20
0V ,
f = 1M H z
C gs + C gd , C ds S H O R TE D
C gd
C ds + C gd
V G S , G ate-to-S ource V oltage (V )
6000
C , C apacitanc e (pF )
C is s
4000
3000
C os s
2000
C rs s
1000
0
10
V D S = 80V
V D S = 50V
V D S = 20V
16
12
8
4
FO R TE S T C IR C U IT
S E E FIG U R E 13
0
A
1
I D = 28 A
100
0
V D S , D rain-to-S ource V oltage (V )
120
160
A
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (on)
I D , D rain C urrent (A )
I S D , R everse D rain C urrent (A )
80
Q G , Total G ate C harge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
T J = 17 5°C
T J = 25°C
10
10µ s
100
100µ s
1m s
10
10m s
V G S = 0V
1
0.4
0.8
1.2
1.6
V S D , S ource-to-D rain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
40
A
2.0
T C = 25°C
T J = 175°C
S ingle P ulse
1
1
A
10
100
1000
V D S , D rain-to-S ource V oltage (V )
Fig 8. Maximum Safe Operating Area
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IRFP3710
60
RD
VDS
I D , Drain Current (A)
50
VGS
D.U.T.
RG
+
-VDD
40
10V
30
Pulse Width £1 µs
Duty Factor £ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
175
TC , Case Temperature ( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
P DM
0.05
t1
0.02
0.01
t2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP3710
15V
L
VDS
D R IVE R
D .U .T
RG
+
V
- DD
IA S
20V
0 .01 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S ingle P ulse A valanc he E nergy (m J)
1200
TO P
1000
B O TTO M
ID
11A
20A
28 A
800
600
400
200
0
V D D = 25V
25
50
V (B R )D S S
A
75
100
125
150
175
S tarting T J , Junction T em perature (°C )
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
+
V
- DS
10 V
QGS
D.U.T.
QGD
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP3710
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
· Low Stray Inductance
· Ground Plane
· Low Leakage Inductance
Current Transformer
+
-
-
+
RG
·
·
·
·
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
Period
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP3710
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
0.25 (.010) M
D B M
-A5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
NOTES:
5.50 (.217)
4.50 (.177)
1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
T O -247-A C .
3
-C -
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
5.30 (.209)
4.70 (.185)
2.50 (.089)
1.50 (.059)
4
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LE A D A S S IG N M E N TS
1
2
3
4
-
G A TE
D R A IN
SOURCE
D R A IN
Part Marking Information
TO-247AC
E X A M P L E : TH IS IS A N IR F P E 3 0
W ITH A S S E M B L Y
LOT CODE 3A1Q
A
IN TE R N A TIO N A L
R E C T IF IE R
LOGO
PART NUMBER
IR F P E 3 0
3A 1 Q 9 3 0 2
ASSEMBLY
LOT CODE
D A TE C O D E
(Y YW W )
YY = YEAR
W W W EEK
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Data and specifications subject to change without notice. 10/98
8
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