NTE78 Silicon NPN Transistor RF Power Output Description: The NTE78 is a silicon NPN epitaxial planer type transistor designed for use as 3 to 4 watt RF power amplifiers in HF band mobile radio applications. Features: D High Power Gain D Emitter Ballasted Construction for High Reliability and Good Performance Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage (RBE = 10Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Collector Dissipation (TA = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5W Collector Dissipation (TC = +25°C), PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83°C/W Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Emitter–Base Breakdown Voltage V(BR)EBO IE = 1mA, IC = 0 5 – – V Collector–Base Breakdown Voltage V(BR)CBO IC = 1mA, IE = 0 75 – – V Collector–Emitter Breakdown Voltage V(BR)CER IC = 10mA, RBE = 10Ω 75 – – V Collector Cutoff Current ICBO VCB = 30V, IE = 0 – – 100 µA Emitter Cutoff Current IEBO VEB = 3V, IC = 0 – – 100 µA DC Forward Current Gain hFE VCE = 10V, IC = 100mA, Note 1 35 70 180 Output Power PO VCC = 12V, Pin = 250mW, f = 27MHz 6.0 7.5 – W Collector Efficiency ηC 55 60 – % Note 1. Pulse test: Pulse Width = 150µs, Duty Cycle = 5%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab