PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications
l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for
Netcom and Computing Applications.
l Power Management for Netcom,
Computing and Portable Applications.
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on)
l Fully Characterized Avalanche Voltage
and Current
VDSS
12V
RDS(on) max
8.0mΩ
Ω@VGS = 4.5V
15A
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
ID
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
12
±12
15
12
120
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
04/29/02
IRF7476
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
12
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.014
6.0
12
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
8.0
VGS = 4.5V, ID = 15A
mΩ
30
VGS = 2.8V, ID = 12A
1.9
V
VDS = VGS, ID = 250µA
100
VDS = 9.6V, VGS = 0V
µA
250
VDS = 9.6V, VGS = 0V, TJ = 125°C
200
VGS = 12V
nA
-200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
31
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
26
4.6
11
17
11
29
19
8.3
2550
2190
450
Max. Units
Conditions
–––
S
VDS = 6.0V, ID = 12A
40
I D = 12A
–––
nC
VDS = 10V
–––
VGS = 4.5V
–––
VGS = 0V, VDS = 5.0V
–––
VDD = 6.0V
–––
ID = 12A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 6.0V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
160
12
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Qrr
trr
Qrr
Reverse
Reverse
Reverse
Reverse
2
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
2.5
–––
–––
120
–––
–––
–––
–––
–––
–––
0.87
0.73
55
59
54
60
1.2
–––
82
89
81
90
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 12A, VGS = 0V
TJ = 125°C, IS = 12A, VGS = 0V
TJ = 25°C, IF = 12A, VR=12V
di/dt = 100A/µs
TJ = 125°C, IF = 12A, VR=12V
di/dt = 100A/µs
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IRF7476
1000
1000
VGS
100
10
1
0.1
1.5V
0.01
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
VGS
TOP
10V
8.0V
5.0V
4.5V
3.5V
2.7V
2.0V
BOTTOM 1.5V
TOP
100
10
1
1.5V
0.1
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.01
0.001
0.1
1
10
0.1
100
1
Fig 1. Typical Output Characteristics
100
Fig 2. Typical Output Characteristics
1000.00
ID , Drain-to-Source Current (Α )
10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
2.0
100.00
I D = 15A
10.00
T J = 25°C
1.00
VDS = 10V
20µs PULSE WIDTH
0.10
1.5
2.0
2.5
3.0
3.5
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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4.0
(Normalized)
T J = 150°C
R DS(on) , Drain-to-Source On Resistance
1.5
1.0
0.5
V GS = 4.5V
0.0
-60
-40
-20
0
20
40
60
80
100
120
140
160
Tj, Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7476
100000
6
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
I D = 12A
V DS = 9.6V
V DS = 6V
5
V DS = 2.4V
C, Capacitance(pF)
Coss = Cds + Cgd
VGS, Gate-to-Source Voltage (V)
10000
C iss
C oss
1000
C rss
100
4
3
2
1
0
1
10
0
100
5
10
15
20
25
30
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
ID , Drain-to-Source Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
I SD, Reverse Drain Current (A)
100
TJ = 150
° C
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
1.4
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7476
15
RD
VDS
VGS
12
D.U.T.
RG
+
ID , Drain Current (A)
-VDD
9
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
3
VDS
90%
0
25
50
75
100
125
150
°
Tc, Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJA )
100
D = 0.50
10
0.20
Thermal Response
0.10
0.05
P DM
0.02
1
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.1
0.0001
0.001
0.01
0.1
1
t1/ t
2
J = P DM x Z thJA
10
+T A
100
1000
t 1, Rectangular Pulse Duration (sec)
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
R DS(on) , Drain-to -Source On Resistance (m Ω )
R DS (on) , Drain-to-Source On Resistance (m Ω)
IRF7476
7.5
7.3
VGS = 4.5V
7.0
6.8
6.5
0
20
40
60
80
100
15.00
13.00
11.00
9.00
ID = 15A
7.00
5.00
2.0
120
4.0
6.0
8.0
10.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
50KΩ
12V
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
400
ID
VG
VGS
TOP
3mA
9.6A
Charge
IG
BOTTOM
ID
300
EAS , Single Pulse Avalanche Energy (mJ)
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15 V
V (B R )D S S
tp
L
VD S
D .U .T
RG
IA S
20V
IAS
tp
DRIVE R
+
V
- DD
0.01 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
5.4A
A
12A
200
100
0
25
50
75
100
125
150
Starting Tj, Junction Temperature (°C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7476
SO-8 Package Details
D
8
6
7
6
MAX
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
e1
A
5
H
E
0.25 [.010]
1
6X
2
3
A
4
e
e1
C
.025 BAS IC
0.635 BAS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
8X b
MILLIMET ERS
MIN
5
A
INCHES
DIM
B
A1
8X L
8X c
7
C A B
F OOT PRINT
NOT ES :
1. DIMENSIONING & T OLERANCING PER AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO
A S UBST RAT E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: T HIS IS AN IRF7101 (MOS FET )
INTERNAT IONAL
RECTIFIER
LOGO
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YWW
XXXX
F7101
DATE CODE (YWW)
Y = LAS T DIGIT OF THE YEAR
WW = WEEK
LOT CODE
PART NUMBER
7
IRF7476
SO-8 Tape and Reel
T ER M INA L NU M BE R 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEE D D IR EC TIO N
N OT E S :
1 . CO NT RO L L ING DIM E N S ION : M IL L IM E T E R.
2 . A L L D IM E N S ION S A R E S H O W N IN M IL L IM E T E R S (IN CHES ).
3 . OU TL IN E C O N F O RM S T O E IA -4 81 & E IA -5 4 1.
330.00
(12 .9 92)
MA X.
14.40 ( .566 )
12.40 ( .488 )
N O TE S :
1. CO N T RO LL ING D IME N SIO N : MIL LIM ET ER .
2. O UT LIN E C ON F O RM S TO EIA-481 & E IA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 2.3mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board.
RG = 25Ω, IAS = 12A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/02
8
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