Transistor 2SA1738 Silicon PNP epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 1.45 0.95 3 +0.1 1.9±0.2 0.65±0.15 1 0.95 ● +0.2 ● 0.65±0.15 High-speed switch (pair with 2SC3757) Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 Symbol Ratings Unit Collector to base voltage VCBO –15 V Collector to emitter voltage VCEO –15 V Emitter to base voltage VEBO –4 V Peak collector current ICP –100 mA Collector current IC –50 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics +0.1 0.1 to 0.3 0.4±0.2 1:Base 2:Emitter 3:Collector JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol : AK (Ta=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO VCB = –8V, IE = 0 Emitter cutoff current IEBO VEB = –3V, IC = 0 hFE1* VCE = –1V, IC = –10mA 50 30 Forward current transfer ratio 0 to 0.1 Parameter 0.8 +0.2 (Ta=25˚C) 1.1 –0.1 ■ Absolute Maximum Ratings 0.16 –0.06 2 typ max Unit – 0.1 µA – 0.1 µA 150 hFE2 VCE = –1V, IC = –1mA Collector to emitter saturation voltage VCE(sat) IC = –10mA, IB = –1mA Transition frequency fT VCB = –10V, IE = 10mA, f = 200MHz 1500 MHz Collector output capacitance Cob VCB = –5V, IE = 0, f = 1MHz 1 pF Turn-on time ton (Note 1) Next page 12 ns Turn-off time toff (Note 1) Next page 20 ns Storage time tstg (Note 1) Next page 19 ns *h FE1 – 0.1 800 – 0.2 V Rank classification Rank Q R hFE1 50 ~ 120 90 ~ 150 1 Transistor 2SA1738 Switching time measurement circuit ton, toff Test Circuit VBB VCC=–1.5V VBB=–10V VCC=–3V 2kΩ 62Ω 508Ω 30Ω Vout 52Ω 0.1µF Vin Vout 34Ω 51Ω 51Ω Vin 240 Collector power dissipation PC (mW) 0.1µF Vin PC — Ta tstg Test Circuit 0 10% Vin 90% 90% Vout 0 90% 90% Vout 10% toff Vin=9.0V ton toff Vin=–5.8V Vin=9.8V VBB=Ground VBB=–8.0V 200 180 120 80 40 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) VCE(sat) — IC Ta=25˚C IB=–600µA –50 –500µA –400µA –40 –300µA –30 –200µA Collector to emitter saturation voltage VCE(sat) (V) –100 –60 Collector current IC (mA) VBE(sat) — IC IC/IB=10 –30 –10 Ta=75˚C 25˚C –25˚C –3 –1 – 0.3 –20 –100µA –10 – 0.1 –2 –4 –6 –8 –10 –12 – 0.01 –1 –3 –10 –30 Transition frequency fT (MHz) Forward current transfer ratio hFE 2000 160 120 1200 Ta=75˚C 80 25˚C –25˚C 800 400 0 –3 –10 –30 Collector current IC (mA) –100 1 3 10 –1 Cob — VCB 2.4 1600 –1 – 0.01 – 0.001 – 0.003 – 0.01 – 0.03 – 0.1 – 0.3 Collector current IC (mA) VCB=–10V f=200MHz Ta=25˚C VCE=–10V 2 –100 –300 –1000 fT — IE 2400 200 Ta=–25˚C 25˚C 75˚C –1 Collector current IC (mA) hFE — IC 240 0 – 0.1 – 0.3 –3 – 0.03 Collector to emitter voltage VCE (V) 40 –10 – 0.1 Collector output capacitance Cob (pF) 0 IC/IB=10 –30 – 0.3 – 0.03 0 –100 Base to emitter saturation voltage VBE(sat) (V) IC — VCE 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 2.0 1.6 1.2 0.8 0.4 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V)