SANKEN 2SD1785

2SD1785
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1258)
VCEO
120
V
IEBO
VEBO
6
V
V(BR)CEO
6(Pulse10)
A
hFE
IC
Symbol
Conditions
Unit
VCB=120V
10max
µA
10max
mA
VEB=6V
IC=10mA
120min
VCE=2V, IC=3A
2000min
V
1
A
VCE(sat)
PC
30(Tc=25°C)
W
fT
VCE=12V, IE=–0.1A
100typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
70typ
pF
–55 to +150
°C
Tstg
1.5max
RL
(Ω)
VCC
(V)
IC
(A)
10
30
VBB1
(V)
3
10
–1.5
1.5typ
5.5typ
I C – V BE Temperature Characteristics (Typical)
2
0
4
0
6
0.3
1
Collector-Emitter Voltage V C E (V)
5
10
50
(V C E =2V)
10000
5000
DC C urrent G ain h FE
p
1000
500
12
5
25
1000
500
–3
0˚
C
100
50
30
0.03 0.05 0.1
100
1
5˚C
˚C
Transient Thermal Resistance
Ty
0.5
10
Collector Current I C (A)
0.5
)
)
mp)
2
1
5
10
5
1
0.5
1
10
100
1000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
emp
1
θ j-a – t Characteristics
h FE – I C Temperature Characteristics (Typical)
10000
0.1
0.4
Base-Emittor Voltage V B E (V)
(V C E =2V)
0.03
0
100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
5000
2
e Te
4A
2A
1
4
(Cas
2
I C =6 A
–30˚C
A
0 .4 m A
mp
0 .5 m
4
se T
A
6
Te
0 .7 m
2
(Ca
1mA
se
6
A
8
25˚C
1 .5 m
3
(Ca
2mA
A
5˚C
3m
12
A
Collector Current I C (A)
5m
θ j- a ( ˚C/W)
A
Collector-Emitter Saturation Voltage V C E (s at) (V )
A
m
1
20
Collector Current I C (A)
0.5typ
–3
B C E
(V CE =2V)
0m
I B =0.3mA
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
30
20
120
he
at
si
nk
Collector Curr ent I C (A)
ite
0.1
fin
Without Heatsink
Natural Cooling
20
In
0.5
ith
1
W
ms
C
s
10
50
D
1m
5
Maxim um Power Dissip ation P C (W)
10
Typ
100
Cut- off F req uency f T (MH Z )
D C Cur r ent Gai n h F E
2.4±0.2
Weight : Approx 2.0g
a. Type No.
b. Lot No.
tf
(µs)
tstg
(µs)
V CE ( sa t ) – I B Characteristics (Typical)
8
0
ton
(µs)
IB2
(mA)
3
I C – V CE Characteristics (Typical)
1.35±0.15
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.2±0.2
IB1
(mA)
VBB2
(V)
1.35±0.15
2.54
■Typical Switching Characteristics (Common Emitter)
4.2±0.2
2.8 c0.5
ø3.3±0.2
a
b
V
IB
IC=2A, IB=3mA
10.1±0.2
4.0±0.2
ICBO
0.8±0.2
V
±0.2
Unit
120
3.9
2SD1785
External Dimensions FM20(TO220F)
(Ta=25°C)
2SD1785
8.4±0.2
■Electrical Characteristics
VCBO
(2.5kΩ)(200Ω) E
Application : Driver for Solenoid, Relay and Motor, Series Regulator, and General Purpose
16.9±0.3
■Absolute maximum ratings (Ta=25°C)
C
B
13.0min
Darlington
Symbol
Equivalent
circuit
10
Without Heatsink
2
0
–0.05
–0.1
–0.5
–1
Emitter Current I E (A)
–5
–8
0.05
3
5
10
50
100
Collector-Emitter Voltage V C E (V)
200
0
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
137