Power Transistors 2SC5622 Silicon NPN triple diffusion mesa type Unit: mm For horizontal deflection output Unit VCBO 1 500 V Collector to base voltage Collector to emitter voltage VCES 1 500 V Emitter to base voltage VEBO 7 V Peak collector current ICP 12 A Collector current IC 6 A IB 3 A PC 40 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Base current TC = 25°C Ta = 25°C 3 (4.0) 2.0±0.2 5˚ 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5˚ 1 2 5.5±0.3 Rating 5˚ 3 1: Base 2: Collector 3: Emitter TOP-3E Package (2.0) Symbol 5˚ 18.6±0.5 (2.0) Solder Dip Parameter 3.3±0.3 ■ Absolute Maximum Ratings TC = 25°C 3.0±0.3 5˚ (23.4) (2.0) • High breakdown voltage: 1 500 V • High-speed switching • Wide area of safe operation (ASO) (4.5) (10.0) 5˚ (1.2) 26.5±0.5 ■ Features Collector power dissipation φ 3.2±0.1 22.0±0.5 15.5±0.5 Marking Symbol: C5622 Internal Connection C B E ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Symbol Collector cutoff current ICBO Emitter to base voltage VEBO Max Unit VCB = 1 000 V, IE = 0 Conditions 50 µA VCB = 1 500 V, IE = 0 1 mA IE = 500 mA, IC = 0 7 V hFE VCE = 5 V, IC = 4 A Collector to emitter saturation voltage VCE(sat) IC = 4 A, IB = 0.8 A Base to emitter saturation voltage VBE(sat) IC = 4 A, IB = 0.8 A Forward current transfer ratio Min Typ 5 9 5 1.5 V V Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz Diode forward voltage VF IF = 4 A −2 V Storage time tstg IC = 4 A, Resistance loaded 5.0 µs Fall time tf IB1 = 0.8 A, IB2 = −1.6 A 0.5 µs 3 MHz 1