2SD2170 Transistors Medium Power Transistor (Motor, Relay drive) (90 +20 −10 , 2A) 2SD2170 !External dimensions (Units : mm) 4.0 1.5 0.4 1.0 2.5 0.5 1.6 3.0 0.5 4.5 (1) (2) ROHM : MPT3 EIAJ : SC-62 (1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source) 1.5 1.5 0.4 (3) 0.4 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !Absolute maximum ratings (Ta=25°C) Unit Symbol Limits Collector-base voltage Collector-emitter voltage VCBO VCES 90 90 Emitter-base voltage VEBO 6 2 V V V A (DC) 3 A (Pulse) 2 W °C °C Parameter Collector current IC Collector power dissipation PC Junction temperature Tj Tstg Storage temperature *1 *2 +20 −10 +20 −10 150 −55~+150 *1 *2 Single pulse Pw = 10ms , Duty = 1 / 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. !Packaging specifications and hFE Type 2SD2170 Package hFE MPT3 1k~10k Marking DM Code Basic ordering unit (pieces) T100 1000 !Circuit diagram C B R1 E : Emitter B : Base C : Collector !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Collector-emitter breakdown voltage BVCBO BVCEO 80 80 - - 110 110 10 V V µA - - 3 mA hFE 1000 - 1.5 10000 V - fT - 80 - MHz Cob - 25 - pF Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance *1 Measured using pulse current. ICBO IEBO VCE(sat) *2 Transition frequency of the device. Conditions IC = 50µA IC = 1mA VCB = 70V VEB = 5V IC/IB = 1A/1mA VCE = 2V , IC = 1A VCE = 5V , IE = −0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz *1 *1 *2 R2 R1 R2 E 3.5kΩ 300 Ω