2SK2339 Power F-MOS FETs 2SK2339 Silicon N-Channel Power F-MOS ■ Features ● Avalanche ● Low energy capability guaranteed 3.4±0.3 8.5±0.2 ON-resistance 6.0±0.5 1.0±0.1 ● Low-voltage drive 1.5±0.1 secondary breakdown 10.0±0.3 ● No Unit : mm ■ Applications ● Solenoid ● Motor drive 1.1max. 2.0 1.5max. relay 10.5min. ● Non-contact 0.8±0.1 0.5max. drive ● Control 2.54±0.3 equipment ● Switching 5.08±0.5 mode regulator 1 2 3 ■ Absolute Maximum Ratings (Tc = 25˚C) Parameter Symbol Rating Unit Drain-Source breakdown voltage VDSS 80±10 V Gate-Source voltage VGSS ±15 V DC ID ±10 A Pulse IDP ±20 A EAS * 62.5 mJ Drain current Avalanche energy capability Allowable power dissipation TC = 25˚C Ta= 25˚C 30 PD 1 : Gate 2 : Collector 3 : Emitter N Type Package ■ Equivalent Circuit D W 1.3 Channel temperature Tch 150 ˚C Storage temperature Tstg –55 to +150 ˚C G * L= 5mH, IL= 5A, 1 pulse S ■ Electrical Characteristics (Tc = 25˚C) Parameter Symbol Condition Min Typ Max Unit Drain-Source cut-off current IDSS VDS= 70V, VGS= 0 10 µA Gate-Source leakage current IGSS VDS= 0, VGS=15V ±10 µA Drain-Source breakdown voltage VDSS ID=1mA, VGS= 0 70 90 V Gate threshold voltage Vth VDS=10V, ID=1mA 1 2.5 V RDS(on)1 VGS=10V, I D= 5A 150 230 mΩ RDS(on)2 VGS= 4V, ID= 5A 230 370 mΩ –1.8 V Drain-Source ON-resistance Forward transadmittance | Yfs | VDS=10V, ID= 5A Diode forward voltage VDSF IDR=10A, VGS= 0 Reverse recovery time trr L=230µ H, VDD= 30V, VGS = 0 0.55 µs Reverse recovery charge Qrr IDR=10A, di/dt= 80A/µ s 2.2 µs Input capacitance Ciss 85 pF Output capacitance Coss VDS=10V, VGS= 0, f= 1MHz 250 pF Feedback capacitance Crss 20 pF Turn-on time ton 0.5 µs Fall time tf 0.9 µs Turn-off time (delay time) td(off) 1.9 µs Channel-Case heat resistance Rth(ch-c) 4.2 ˚C/W Channel-Atmosphere heat resistance Rth(ch-a) 96 ˚C/W VDD= 30V, ID= 5A VGS=10V, R L= 6Ω 3 5.5 S 2SK2339 Power F-MOS FETs Area of safe operation (ASO) t=1ms ID 10 3 t=10ms t=100ms DC 1 0.3 50 TC=25˚C 50 (A) t=100ms 100 (1) TC=Ta (2) Without heat sink (PD=1.3W) 40 30 (1) 20 30 20 IAS IDP Allowable power dissipation PD (W) 30 Drain current ID (A) 60 Non repetitive pulse TC=25˚C IAS – L-load 10 Abalanche current 100 PD – Ta 5 10 62.5mJ 3 2 1 0.5 0.3 0.2 (2) 0 0.1 3 1 5 10 30 50 0 100 0.1 0.1 80 100 120 140 160 ID –VDS ID – VGS 0.3 0.5 L-load 1 L 3 10 6 Ta=25˚C VDS=10V ID=1mA TC=25˚C 5V 5 (mH) Vth – TC 18 VGS=10V 16 5 4.5V ID (A) 8 Drain current 4V 6 3.5V PD=30W 12 10 8 6 4 10 VDS 0 12 (V) 2 Drain-Source ON-resistance 400 300 (1) 200 (2) 100 0 2 4 6 8 Drain current ID (A) 10 12 25 50 75 100 125 Case temperature TC (˚C) RDS(on) – VGS | Yfs | – ID 150 7 VDS=10V Ta=25˚C 500 ID=2.5A ID=5A 400 300 200 100 6 5 4 3 2 1 0 0 0 0 10 TC=25˚C RDS (on) 500 8 600 (mΩ) (1)VGS=4V (2)VGS=10V TC=25˚C 6 Gate-Source voltage VGS (V) RDS(on) – ID 600 4 (S) Drain-Source voltage 8 | Yfs | 6 Forward transadmittance 4 2 0 0 2 3 2 0 0 4 1 3V 2 Gate threshold voltage Vth (V) 14 10 4 Drain-Source ON-resistance RDS(on) (Ω) 60 Ambient temperature Ta (˚C) 12 ID (A) 40 Drain-Source voltage VDS (V) 14 Drain current 20 0 2 4 6 Gate-Source voltage 8 VGS 10 (V) 0 2 4 6 8 Drain current ID (A) 10 12 2SK2339 Power F-MOS FETs 3.0 f=1MHz TC=25˚C 1000 VDS, VGS – Qg 14 VDD=30V VGS=10V TC=25˚C 2.5 ID=10A Ta=20˚C 60 200 Coss Ciss 100 50 Drain-Source voltage VDS (V) 500 2.0 td(off) 1.5 tf 1.0 20 Crss ton 0.5 10 5 0 0 20 40 60 80 100 VDS 50 10 VDS=30V VDS=40V VDS=50V 40 8 VGS 30 6 20 4 10 2 0 0 2 4 Drain-Source voltage VDS (V) 6 Drain current 8 10 12 0 0 5 10 15 20 25 Gate charge amount Qg (nc) ID (A) ISD – VSD Rth – tP 1000 20 VGS=0 TC=25˚C Thermal resistance Rth (˚C/W) 10 Souce-Drain current ISD (A) 12 5 3 2 1 0.5 0.3 0.2 Notes: Rth was measured at Ta=25˚C and under natural convection. (1) without heat sink (2) with a 50 × 50 × 2mm Al heat sink (1) 100 (2) 10 1 0.1 0.05 0 0.5 1.0 1.5 Diode forward voltage VSD (V) 2.0 0.1 10–4 10–3 10–2 10–1 1 Pulse width tP (s) 10 102 103 104 Gate-Source voltage VGS (V) 2000 td(off), tr, ton – ID Switching time t (ms) Input capacitance, Output capacitance, Ciss, Coss, Crss (pF) Feedback capacitance Ciss, Coss, Crss – VDS