Transistor 2SD1824 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 2.1±0.1 ● 0.3–0 0.65 +0.1 0.425 1 3 2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 15 V Peak collector current ICP 50 mA Collector current IC 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 1:Base 2:Emitter 3:Collector +0.1 0.15–0.05 0.2±0.1 EIAJ:SC–70 S–Mini Type Package Marking symbol : 1V (Ta=25˚C) Parameter Symbol Collector cutoff current 0 to 0.1 (Ta=25˚C) 0.7±0.1 ■ Absolute Maximum Ratings 0.9±0.1 0.2 ● High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). High emitter to base voltage VEBO. S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 1.3±0.1 ● 1.25±0.1 0.65 ● 0.425 2.0±0.2 ■ Features Conditions ICBO VCB = 60V, IE = 0 min typ max Unit 100 nA 1 µA ICEO VCE = 60V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 100 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 100 V Emitter to base voltage VEBO IE = 10µA, IC = 0 15 V Forward current transfer ratio hFE * VCE = 10V, IC = 2mA 400 Collector to emitter saturation voltage VCE(sat) IC = 10mA, IB = 1mA Transition frequency fT VCB = 10V, IE = –2mA, f = 200MHz *h FE 1200 0.05 90 0.2 V MHz Rank classification Rank R S hFE 400 ~ 800 600 ~ 1200 Marking Symbol 1VR 1VS 1 2SD1824 Transistor PC — Ta IC — VCE 60 160 120 80 IB=100µA 80µA 60µA 50µA 40µA 50 40 30µA 30 20µA 20 10µA 40 Ta=75˚C –25˚C 40 30 20 10 10 0 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 VCE(sat) — IC Ta=75˚C 1200 3 1 0.3 Ta=75˚C 0.1 –25˚C 0.03 1 3 10 30 25˚C –25˚C 900 600 300 0 0.1 100 Collector current IC (mA) 0.3 Noise voltage NV (mV) 4 3 2 1 0 1 3 10 10 30 160 120 80 40 0 – 0.1 – 0.3 100 –1 30 100 Collector to base voltage VCB (V) 80 –30 –100 NV — VCE Rg=100kΩ Rg=100kΩ 60 22kΩ 40 5kΩ 20 80 60 22kΩ 40 5kΩ 20 IC=1mA GV=80dB Function=FLAT Ta=25˚C 0 003 –10 100 VCE=10V GV=80dB Function=FLAT Ta=25˚C 0 0.01 –3 Emitter current IE (mA) NV — IC 100 IE=0 f=1MHz Ta=25˚C 5 3 2.0 VCB=10V Ta=25˚C Collector current IC (mA) Cob — VCB 6 1 Noise voltage NV (mV) 0.3 1.6 200 1500 10 1.2 VCE=10V Forward current transfer ratio hFE 30 0.8 fT — I E 1800 IC/IB=10 0.01 0.1 0.4 Base to emitter voltage VBE (V) hFE — IC 100 25˚C 0 Collector to emitter voltage VCE (V) Transition frequency fT (MHz) 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 25˚C 50 60 Collector current IC (mA) 200 0 Collector output capacitance Cob (pF) VCE=10V Ta=25˚C 70 0 2 IC — VBE 80 Collector current IC (mA) Collector power dissipation PC (mW) 240 0.1 0.3 Collector current IC (mA) 1 1 3 10 30 100 Collector to emitter voltage VCE (V)