Order this document by MMBT2222LT1/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon COLLECTOR 3 *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 1 Rating Symbol 2222 2222A Unit Collector – Emitter Voltage VCEO 30 40 Vdc Collector – Base Voltage VCBO 60 75 Vdc Emitter – Base Voltage VEBO 5.0 Collector Current — Continuous 6.0 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) Vdc IC 600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C PD 225 mW 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W PD 300 mW 2.4 mW/°C RqJA 417 °C/W TJ, Tstg – 55 to +150 °C Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2222LT1 = M1B; MMBT2222ALT1 = 1P ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0) MMBT2222 MMBT2222A V(BR)CEO 30 40 — — Vdc Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) MMBT2222 MMBT2222A V(BR)CBO 60 75 — — Vdc Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) MMBT2222 MMBT2222A V(BR)EBO 5.0 6.0 — — Vdc Collector Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A ICEX — 10 nAdc Collector Cutoff Current (VCB = 50 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) (VCB = 50 Vdc, IE = 0, TA = 125°C) (VCB = 60 Vdc, IE = 0, TA = 125°C) MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICBO — — — — 0.01 0.01 10 10 µAdc Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) MMBT2222A IEBO — 100 nAdc Base Cutoff Current (VCE = 60 Vdc, VEB(off) = 3.0 Vdc) MMBT2222A IBL — 20 nAdc 0.062 in. 0.024 in. 99.5% alumina. 1. FR– 5 = 1.0 0.75 2. Alumina = 0.4 0.3 Thermal Clad is a trademark of the Bergquist Company. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 35 50 75 35 100 50 30 40 — — — — 300 — — — MMBT2222 MMBT2222A — — 0.4 0.3 MMBT2222 MMBT2222A — — 1.6 1.0 MMBT2222 MMBT2222A — 0.6 1.3 1.2 MMBT2222 MMBT2222A — — 2.6 2.0 250 300 — — — 8.0 — — 30 25 2.0 0.25 8.0 1.25 — — 8.0 4.0 50 75 300 375 5.0 25 35 200 — 150 — 4.0 Unit ON CHARACTERISTICS DC Current Gain (IC = 0.1 mAdc, VCE = 10 Vdc) (IC = 1.0 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc) (IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) (IC = 150 mAdc, VCE = 10 Vdc) (3) (IC = 150 mAdc, VCE = 1.0 Vdc) (3) (IC = 500 mAdc, VCE = 10 Vdc) (3) hFE MMBT2222A only MMBT2222 MMBT2222A Collector – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) — VCE(sat) (IC = 500 mAdc, IB = 50 mAdc) Base – Emitter Saturation Voltage (3) (IC = 150 mAdc, IB = 15 mAdc) Vdc VBE(sat) (IC = 500 mAdc, IB = 50 mAdc) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (4) (IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz) fT MMBT2222 MMBT2222A Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) MHz Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) pF Cibo MMBT2222 MMBT2222A Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Small – Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) (IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) MMBT2222A MMBT2222A Collector Base Time Constant (IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz) MMBT2222A Noise Figure (IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) MMBT2222A pF hie kΩ X 10– 4 hre hfe — mmhos hoe rb, Cc ps NF dB SWITCHING CHARACTERISTICS (MMBT2222A only) Delay Time Rise Time Storage Time Fall Time v (VCC = 30 Vdc, VBE(off) = – 0.5 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) td — 10 tr — 25 (VCC = 30 Vdc, IC = 150 mAdc, IB1 = IB2 = 15 mAdc) ts — 225 tf — 60 v ns ns 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data SWITCHING TIME EQUIVALENT TEST CIRCUITS + 30 V + 30 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% +16 V 0 –2 V 200 +16 V 1.0 to 100 µs, DUTY CYCLE ≈ 2.0% 200 0 1 kΩ CS* < 10 pF < 2 ns 1k –14 V < 20 ns CS* < 10 pF 1N914 –4 V Scope rise time < 4 ns *Total shunt capacitance of test jig, connectors, and oscilloscope. Figure 1. Turn–On Time Figure 2. Turn–Off Time hFE , DC CURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 5.0 10 300 500 700 1.0 k VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IB, BASE CURRENT (mA) 2.0 3.0 20 30 50 Figure 4. Collector Saturation Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 200 500 IC/IB = 10 TJ = 25°C tr @ VCC = 30 V td @ VEB(off) = 2.0 V td @ VEB(off) = 0 30 20 10 7.0 5.0 200 t′s = ts – 1/8 tf 100 70 50 tf 30 20 10 7.0 5.0 3.0 2.0 5.0 7.0 10 200 300 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 500 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 5. Turn – On Time IC = 1.0 mA, RS = 150 Ω 500 µA, RS = 200 Ω 100 µA, RS = 2.0 kΩ 50 µA, RS = 4.0 kΩ 6.0 f = 1.0 kHz 8.0 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) RS = OPTIMUM RS = SOURCE RS = RESISTANCE 4.0 IC = 50 µA 100 µA 500 µA 1.0 mA 6.0 4.0 2.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k RS, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 5.0 Ccb 3.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) Figure 9. Capacitances 20 30 50 f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz) f, FREQUENCY (kHz) 20 0.2 0.3 0 50 50 100 30 CAPACITANCE (pF) 500 10 8.0 4 300 Figure 6. Turn – Off Time 10 2.0 0.1 VCC = 30 V IC/IB = 10 IB1 = IB2 TJ = 25°C 300 t, TIME (ns) t, TIME (ns) 100 70 50 500 VCE = 20 V TJ = 25°C 300 200 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 Figure 10. Current–Gain Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 +0.5 TJ = 25°C 0 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 0.8 VBE(sat) @ IC/IB = 10 1.0 V 0.6 VBE(on) @ VCE = 10 V 0.4 0.2 RqVC for VCE(sat) – 0.5 – 1.0 – 1.5 RqVB for VBE – 2.0 VCE(sat) @ IC/IB = 10 0 – 2.5 0.1 0.2 50 100 200 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 1.0 k Figure 11. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) 500 Figure 12. Temperature Coefficients 5 INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT–23 SOT–23 POWER DISSIPATION The power dissipation of the SOT–23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by T J(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–23 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C – 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT–23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 6 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. A L 3 B S 1 V 2 G C D H K J CASE 318–08 SOT–23 (TO–236AB) ISSUE AE Motorola Small–Signal Transistors, FETs and Diodes Device Data DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR 7 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 8 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT2222LT1/D