TLN117(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN117(F) Lead(Pb)-Free Opto−Electoronic Switches Floppy Disk Drives Optical Mice Optical Touch Sensors • Unit: mm Small−side−view epoxy−resin package • High radiant intensity: IE = 0.8mW / sr(min)at IF = 20mA • Half−angle value: θ1 / 2 = ±15°(typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Pulse forward current IFP Forward current derating (Ta > 25°C) 600 (Note 1) mA ΔIF / °C −0.33 mA / °C Reverse voltage VR 5 V Operating temperature Topr −25~85 °C Storage temperature Tstg −40~100 °C Soldering temperature (5s) Tsol 260 (Note 2) °C TOSHIBA 4−3P1 Weight: 0.1 g (typ.) Pin Connection Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1. Cathode 1 2 temperature, etc.) may cause this product to decrease in the 2. Anode reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width ≦ 100μs, repetitive frequency =100Hz Note 2: Soldering must be performed 2mm from the bottom of the package body. 1 2007-10-01 TLN117(F) Optical And Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10mA 1.0 1.15 1.3 V Reverse current IR VR = 5V ― ― 10 μA 0.8 ― ― Radiant intensity IE IF = 20mA TLN117(B,F) 2 ― 7.5 TLN117(C,F) 5 ― 18.7 TLN117(F) mW / sr Radiant power PO IF = 20mA ― 2.5 ― mW Capacitance CT VR = 0, f = 1MHz ― 30 ― pF Peak emission wavelength λP IF = 20mA ― 940 ― nm Spectral line half width Δλ IF = 20mA ― 50 ― nm 1 2 IF = 20mA ― ±15 ― ° θ Half value angle Precautions Please be careful of the followings. 1. When forming the leads, bend each lead under the 2mm from the body of the device. Soldering must be performed after the leads have been formed. 2. Radiation intensity falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in radiant power over time. The ratio of fluctuation in radiation intensity to fluctuation in optical output is 1 : 1. I E (t) PO (t) = I E (0) PO (0) 2 2007-10-01 Allowable pulse forward current IFP (mA) TLN117(F) IF – Ta Allowable forward current IF (mA) 80 60 40 20 0 20 60 40 80 IFP – PW 3000 Ta = 25°C 1000 f = 100Hz 500 200Hz 300 500Hz 100 50 30 10kHz 10 3μ 10μ 5kHz 2kHz 100μ 30μ 300μ Pulse width 100 1kHz PW 1m 3m 10m (s) Ambient temperature Ta (°C) IF – V F (typ.) IE – IF 50 (typ.) 30 10 Ta = 75°C 50 5 25 -25 0 3 1 0.9 Radiant intensity Forward current IF (mA) IE (mW / sr) 30 1.0 1.1 1.2 1.3 Forward voltage VF 1.4 Pulse 10 5 3 1 DC 0.5 Pulse width ≦ 100μs Repetitive Frequency = 100Hz Ta = 25°C 0.3 1.5 0.1 1 (V) 3 10 30 100 300 Pulse forward current IFP (mA) 3 2007-10-01 TLN117(F) IFP – VFP Relative IE – Ta (typ.) 5 500 3 Relative radiant intensity 1000 Pulse forward current IFP (mA) 300 100 50 30 1 0.5 0.3 10 0.1 -40 -20 5 20 60 40 80 100 Ambient temperature Ta (°C) 1.0 1.2 1.4 1.6 Pulse forward voltage 1.8 2.0 2.2 2.4 VFP (V) Wavelength Characteristic 1.0 0 Pulse width ≦ 100μs Repetitive Frequency = 100Hz Ta = 25°C 3 1 0.8 (typ.) (typ.) Radiation Pattern (typ.) IF = 20mA Ta = 25°C (Ta = 25°C) Relative intensity 0.8 20° 0.6 10° 0° 10° 20° 30° 30° 40° 40° 50° 50° 0.4 60° 60° 70° 70° 0.2 80° 80° 0 820 860 900 940 980 90° 1020 0 0.2 0.4 0.6 0.8 90° 1.0 Relative intensity Wavelength λ (nm) 4 2007-10-01 TLN117(F) RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-10-01