PNP Silicon High-Voltage Transistors BFN 37 BFN 39 Suitable for video output stages in TV sets and switching power supplies ● High breakdown voltage ● Low collector-emitter saturation voltage ● Complementary types: BFN 36, BFN 38 (NPN) ● Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 4 Package1) BFN 37 BFN 39 BFN 37 BFN 39 Q62702-F1304 Q62702-F1305 B SOT-223 C E C Maximum Ratings Parameter Symbol Values BFN 39 BFN 37 Unit Collector-emitter voltage VCE0 250 300 V Collector-base voltage VCB0 250 300 Emitter-base voltage VEB0 Collector current IC 200 Peak collector current ICM 500 Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 ˚C Ptot 1.5 W Junction temperature Tj 150 ˚C Storage temperature range Tstg 5 mA – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ≤ 72 Junction - soldering point Rth JS ≤ 17 1) 2) K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BFN 37 BFN 39 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 BFN 37 BFN 39 V(BR)CE0 Collector-base breakdown voltage IC = 100 µA, IB = 0 BFN 37 BFN 39 V(BR)CB0 Emitter-base breakdown voltage IE = 100 µA, IB = 0 V(BR)EB0 Collector-base cutoff current VCB = 200 V VCB = 250 V VCB = 200 V, TA = 150 ˚C VCB = 250 V, TA = 150 ˚C ICB0 BFN 37 BFN 39 BFN 37 BFN 39 Emitter-base cutoff current VEB = 4 V, IC = 0 IEB0 DC current gain1) IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 30 mA, VCE = 10 V IC = 30 mA, VCE = 10 V hFE BFN 37 BFN 39 V 250 300 – – – – 250 300 – – – – 5 – – – – – – – – – – 100 100 20 20 nA nA µA µA – – 100 nA 25 40 40 30 – – – – – – – – – – – – 0.4 0.5 – V Collector-emitter saturation voltage1) IC = 20 mA, IB = 2 mA BFN 37 BFN 39 VCEsat Base-emitter saturation voltage1) IC = 20 mA, IB = 2 mA VBEsat – – 0.9 Transition frequency IC = 20 mA, VCE = 10 V, f = 100 MHz fT – 100 0 – MHz Output capacitance VCB = 30 V, f = 1 MHz Cobo – 2.5 – pF AC characteristics 1) Pulse test conditions: t ≤ 300 µs, D = 2 %. Semiconductor Group 2 BFN 37 BFN 39 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector current IC = f (VBE) VCE = 10 V Permissible pulse load Ptot max/Ptot DC = f (tp) Collector cutoff current ICB0 = f (TA) VCB = 200 V Semiconductor Group 3 BFN 37 BFN 39 DC current gain hFE = f (IC) VCE = 10 V Semiconductor Group Transition frequency fT = f (IC) VCE = 10 V, f = 100 MHz 4