FAIRCHILD SS8550C

SS8550
SS8550
2W Output Amplifier of Portable Radios in
Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: IC=1.5A
• Collector Power Dissipation: PC=2W (TC=25°C)
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Collector-Base Voltage
Parameter
Ratings
-40
Units
V
VCEO
VEBO
Collector-Emitter Voltage
-25
V
Emitter-Base Voltage
-6
IC
Collector Current
V
PC
Collector Power Dissipation
TJ
TSTG
-1.5
A
1
W
Junction Temperature
150
°C
Storage Temperature
-65 ~ 150
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -100µA, IE=0
Min.
-40
BVCEO
Collector-Emitter Breakdown Voltage
IC= -2mA, IB=0
-25
BVEBO
Emitter-Base Breakdown Voltage
IE= -100µA, IC=0
-6
ICBO
Collector Cut-off Current
VCB= -35V, IE=0
IEBO
Emitter Cut-off Current
VEB= -6V, IC=0
hFE1
hFE2
hFE3
DC Current Gain
VCE= -1V, IC= -5mA
VCE= -1V, IC= -100mA
VCE= -1V, IC= -800mA
45
85
40
Typ.
Max.
Units
V
V
V
-100
nA
-100
nA
170
160
80
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.28
-0.5
V
VBE (sat)
Base-Emitter Saturation Voltage
IC= -800mA, IB= -80mA
-0.98
-1.2
V
VBE (on)
Base-Emitter on Voltage
VCE= -1V, IC= -10mA
-0.66
-1.0
Cob
Output Capacitance
VCB= -10V, IE=0
f=1MHz
fT
Current Gain Bandwidth Product
VCE= -10V, IC= -50mA
100
V
15
pF
200
MHz
hFEClassification
Classification
B
C
D
hFE2
85 ~ 160
120 ~ 200
160 ~ 300
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
SS8550
Typical Characteristics
1000
-0.5
VCE = -1V
-0.4
IB=-3.5mA
IB=-3.0mA
IB=-2.5mA
-0.3
IB=-2.0mA
IB=-1.5mA
-0.2
IB=-1.0mA
-0.1
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
IB=-4.0mA
100
10
IB=-0.5mA
-0.4
-0.8
-1.2
-1.6
1
-0.1
-2.0
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
-100
VCE = -1V
IC[mA], COLLECTOR CURRENT
IC=10IB
-1000
VBE(sat)
-100
VCE(sat)
-10
-0.1
-1
-10
-100
-10
-1
-0.1
-0.0
-1000
100
f=1MHz
IE=0
10
1
-100
-1000
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2002 Fairchild Semiconductor Corporation
-0.4
-0.6
-0.8
-1.0
-1.2
Figure 4. Base-Emitter On Voltage
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
-10
-0.2
VBE[V], BASE-EMITTER VOLTAGE
IC[mA], COLLECTOR CURRENT
-1
-1000
Figure 2. DC current Gain
-10000
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-10
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Cob[pF], CAPACITANCE
-1
1000
VCE=-10V
100
10
-1
-10
-100
-1000
IC[mA], COLLECTOR CURRENT
Figure 6. Current Gain Bandwidth Product
Rev. A2, November 2002
SS8550
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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As used herein:
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or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1